BSC093N15NS5 MOSFET OptiMOSTM5Power-Transistor,150V SuperSO8 8 Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification Value Unit VDS 150 V RDS(on),max 9.3 mΩ ID 87 A Qrr 58 nC Type/OrderingCode Package BSC093N15NS5 PG-TDSON-8 1) 5 6 2 Marking 093N15NS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.2,2016-06-10 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.2,2016-06-10 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 87 55 A TC=25°C TC=100°C - 348 A TC=25°C - - 130 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 139 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.54 0.9 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area3) - - 50 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 150 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 3.0 3.8 4.6 V VDS=VGS,ID=107µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 7.9 8.7 9.3 10.5 mΩ VGS=10V,ID=44A VGS=8V,ID=22A Gate resistance4) RG - 0.9 1.4 Ω - Transconductance gfs 34 67 - S |VDS|>2|ID|RDS(on)max,ID=44A 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) Defined by design. Not subject to production test 2) Final Data Sheet 3 Rev.2.2,2016-06-10 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 3230 pF VGS=0V,VDS=75V,f=1MHz 604 803 pF VGS=0V,VDS=75V,f=1MHz - 15 26 pF VGS=0V,VDS=75V,f=1MHz td(on) - 14 - ns VDD=75V,VGS=10V,ID=44A, RG,ext=3Ω Rise time tr - 4.3 - ns VDD=75V,VGS=10V,ID=44A, RG,ext=3Ω Turn-off delay time td(off) - 14.4 - ns VDD=75V,VGS=10V,ID=44A, RG,ext=3Ω Fall time tf - 3.8 - ns VDD=75V,VGS=10V,ID=44A, RG,ext=3Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 2430 Output capacitance Coss - Reverse transfer capacitance1) Crss Turn-on delay time Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 14 - nC VDD=75V,ID=44A,VGS=0to10V Gate to drain charge Qgd - 6.8 10.2 nC VDD=75V,ID=44A,VGS=0to10V Switching charge Qsw - 13.4 - nC VDD=75V,ID=44A,VGS=0to10V Gate charge total Qg - 33 40.7 nC VDD=75V,ID=44A,VGS=0to10V Gate plateau voltage Vplateau - 5.7 - V VDD=75V,ID=44A,VGS=0to10V Qoss - 91 121 nC VDD=75V,VGS=0V Unit Note/TestCondition Gate to source charge 1) 1) 1) Output charge Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 87 A TC=25°C IS,pulse - - 348 A TC=25°C VSD - 0.88 1.2 V VGS=0V,IF=44A,Tj=25°C trr - 49 98 ns VR=75V,IF=44,diF/dt=100A/µs Qrr - 58 116 nC VR=75V,IF=44,diF/dt=100A/µs Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.2,2016-06-10 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 160 90 140 80 70 120 60 ID[A] Ptot[W] 100 80 50 40 60 30 40 20 20 0 10 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 0.5 102 10 µs 100 µs 0.2 1 ZthJC[K/W] ID[A] 10 1 ms 0 10 0.1 10-1 0.05 10 ms 0.02 DC 0.01 10-1 single pulse 10-2 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.2,2016-06-10 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 360 20 10V 5.5 V 320 6V 8V 280 6.5 V 15 7V RDS(on)[mΩ] ID[A] 240 200 160 7V 8V 10 10 V 120 6.5 V 5 80 6V 40 5.5 V 0 0 1 2 3 4 5 6 0 7 0 40 80 120 VDS[V] 160 200 240 280 320 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 140 180 120 160 100 140 80 gfs[S] ID[A] 120 100 60 80 60 40 40 20 20 0 175 °C 0 2 25 °C 4 6 8 10 0 0 20 VGS[V] 60 80 100 120 140 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 6 Rev.2.2,2016-06-10 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 20 5.0 4.5 1070 µA 4.0 15 107 µA 3.0 max VGS(th)[V] RDS(on)[mΩ] 3.5 10 typ 2.5 2.0 1.5 5 1.0 0.5 0 -60 -20 20 60 100 0.0 -60 140 -20 20 Tj[°C] 60 100 140 Tj[°C] RDS(on)=f(Tj);ID=44A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25°C max 150°C max Ciss Coss 103 IF[A] C[pF] 102 102 Crss 101 101 100 0 20 40 60 80 100 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.2,2016-06-10 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 75 V 8 25 °C 6 VGS[V] 125 °C IAS[A] 120 V 30 V 100 °C 101 4 2 100 100 101 102 103 0 0 tAV[µs] 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=44Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 160 VBR(DSS)[V] 155 150 145 140 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.2,2016-06-10 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 9 Rev.2.2,2016-06-10 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 RevisionHistory BSC093N15NS5 Revision:2016-06-10,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-10-09 Release of final version 2.1 2016-01-22 Update diagram 13 2.2 2016-06-10 Update trr and Qrr TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.2,2016-06-10