c^^mi-Gonauctoi LPioaucti, Dna.. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon Controlled Rectifier 0.8A RMS UP TO 400 VOLTS SYMBOL A »b »b| *o E • «1 J L M <* 0 5 MILLIU INC HES MIN MIN. MAX. 4.5 6 .170 2 1 0 .407 .0 1 6 0 2 1 .407 ,0 1 « 9 I » - I T S .105 496 3.9 4 . 1 2 5 .1 6 5 2.4 2 0 9 5 .1 0 5 ,045 O S S 1. 1 5 3. 4 3 .139 — .900 1 Z 70 — .050 — S —35 .**« — 29 3 1 1 5 .06 0 . 1— 2.4 2 05 ETEftS MAX. 5.3 3 NOTES .5 33 .482 5.20 4. 1 9 2.6 6 1.39 1.3 3 — — 1.27 l|3 3 3 2 — 2.C—6 NOTES: 1. THREE LEADS. 2. CONTOUR OF THE PACKAGE BEYOND THIS ZONE IS UNCONTROLLED. 3 (THREE LEAD*) ** APPLIES ICTWEEN L| AND L2 4k APPLIES BETVEEN L» AND 9INCH (12.70 MM) FROM SEATIND m.ANE DIAMETER 8 UNeONTMOLLEC IN L) AND IEYONO .5 INCH (12.70MM FROM SEATING PLANE. MAXIMUM ALLOWABLE RATINGS TYPE C203Y C203YY C203A C203B C203C C203D 2 REPETITIVE PEAK OFF-STATE - VOLTAGE,VDRM<1) Tc " -65 C to +125 C REPETITIVE PEAK REVERSE VOLTAGE, V DRM (2) Tc - -65°C to +125°C 30 Volts 60 Volts 100 Volts 200 Volts 300 Volts 400 Volts 30 Volts 60 Volts 100 Volts 200 Volts 300 Volts 400 Volts 1000 ohms maximum. Values apply for zero or negative gate voltage only. RMS On-State Current, IT(RMS) (^ Conduction Angles) Peak One Cycle Surge (non-rep) On-State Current, ITSM Peak Gate Power Dissipation, PGM Average Gate Power Dissipation, PG(AV) Peak Positive Gate Current, IQM Peak Negative Gate Voltage, VGM • Storage Temperature, TSTG Operating Junction Temperature, Tj Quality Semi-Conductors 0.8 Amperes 8.0 Amperes .1.0 Watts for 8.3 msec. 0.01 Watts 0.5 Amperes 8 Volts -65°C to+150°C -65°C to+1256C C203 TEST SYMBOL WIN. TYP. MAX. UNITS Peak Reverse and OffState Current (All Types) IRRM or IDRM — — 1.0 uA — — 50 DC Gate Trigger Current IGT - — 200 — - 500 — - 0.8 — - 1.0 Tc = -65°C, VD = 6Vdc, R L = 100 ohms. — T C =+125°C, Rated VDRM, R L = 1000 ohms. DC Gate Trigger Voltage VGT 0.1 Peak On-State Voltage Holding Current Critical Rate-of-Rise of Off-State Voltage Circuit Commutated Turn-Off Time Steady-State Thermal Resistance _ /nAdc Vdc - 1.5 V IH - - 5.0 mAdc - - 10.0 — 20 — 15 R0JC - - 125 R0JA - - 230 Tc = +25°C, VD = 6Vdc, R L = 100 ohms. Tc = -65°C, V D = 6Vdc, R L = 100 ohms. — tq Tc = +25°C, R GK = 1000 ohms VRRM = V D R M = Rated Value. Tc = +1256C, RGK = 1000 ohms VRRM = V DRM = Rated Value. VTM dv/dt TEST CONDITIONS Tc = +25°C, VD = 6Vdc, R L = 100 ohms. Tc =+25 0 C,I T M = l.OApeak, 1 msec, wide pulse, Duty Cycle < 2% Anode source voltage = 12Vdc, RGK = 1000 ohms. Tc = +25°C. Tc = -65°C V/A/sec Tc = +125°C, Rated VDRM, R GK = 1000 ohms. /jsec Tc = +125°C, rectangular current waveform. Rate-of-rise of current <10A/Msec. Rate reversal of current <5A//isec. ITM = 1A (SO^sec. pulse). Rep. Rate = 60pps. V RRM = Rated, V RX = 15VMin., V DRM = Rated. Rate-of-rise of reapplied off-state voltage = 20V/jusec.; Gate Bias = 0 Volts, 100 Ohms (during turn-off time interval). °C/W Junction-to-case (flat side of case is temperature reference point). Junction-to-ambient (free convection).