Diodes DMN3026LVT 30v n-channel enhancement mode mosfet Datasheet

DMN3026LVT
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(on) max
ID
TA = +25°C

Low Input Capacitance

Low On-Resistance
23mΩ @ VGS = 10V
6.6A

Fast Switching Speed
5.8A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)
Description

Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
Mechanical Data
V(BR)DSS
30V
30mΩ @ VGS = 4.5V

performance, making it ideal for high efficiency power management
Case: TSOT26

applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

DC-DC Converters


Power management functions
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3

Backlighting

Weight: 0.013 grams (approximate)
TSOT26
D 1
6
D
D 2
5
D
G 3
4
S
Top View
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN3026LVT-7
DMN3026LVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Shanghai A/T Site
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
N5L
Chengdu A/T Site
2011
Y
Feb
2
DMN3026LVT
Document number: DS36813 Rev. 3 - 2
N5L = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
YM
N5L
YM
ADVANCE INFORMATION
ADVANCED INFORMATION
Features and Benefits
Mar
3
2012
Z
Apr
4
May
5
2013
A
Jun
6
1 of 6
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2014
B
Jul
7
Aug
8
2015
C
Sep
9
Oct
O
2016
D
Nov
N
Dec
D
April 2014
© Diodes Incorporated
DMN3026LVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
ADVANCED INFORMATION
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
VGSS
±20
V
Steady
State
TA = +25°C
TA = +70°C
ID
6.6
5.3
A
t<10s
TA = +25°C
TA = +70°C
ID
8.5
6.8
A
IS
3.0
A
IDM
35
A
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
Total Power Dissipation (Note 5)
PD
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
TA = +25°C
Total Power Dissipation (Note 6)
PD
W
0.8
100
60
1.5
°C/W
°C/W
W
RθJC
°C/W
°C/W
°C/W
TJ, TSTG
-55 to +150
°C
RθJA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Units
1.0
83
50
14.5
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Value
1.2
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
30

Zero Gate Voltage Drain Current
IDSS



1.0
µA
VDS = 30V, VGS = 0V
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
IGSS


100
nA
VGS = 20V, VDS = 0V
VGS(th)
1.0
1.5
2.0
V
VDS = VGS, ID = 250µA

19
23

22
30
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
VSD

0.7
1.2
Ciss

643

Output Capacitance
Coss

65

Reverse Transfer Capacitance
Crss

Gate Resistance
RG

49
2.5

Total Gate Charge (VGS = 4.5V)
Qg

5.7

Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg

12.5

Qgs

1.7

V
mΩ
Qgd

1.8

Turn-On Delay Time
tD(on)

2.2

Turn-On Rise Time
tr

2.5

Turn-Off Delay Time
tD(off)

12.1

VGS = 10V, ID = 6.5A
VGS = 4.5V, ID = 6.0A
V
VGS = 0V, IS = 1.0A
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 15V, ID = 4.0A
nS
VGS = 10V, VDD = 15V, RG = 6.0Ω,
ID= 6.5A

Gate-Drain Charge
VGS = 0V, ID = 250µA
Turn-Off Fall Time
tf

3.0

Body Diode Reverse Recovery Time
trr

6.5

nS
IF = 6.5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr

1.7

nC
IF = 6.5A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN3026LVT
Document number: DS36813 Rev. 3 - 2
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DMN3026LVT
30
20
VGS = 10V
20
16
VGS = 3V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 4.5V
VGS = 4.V
VGS = 3.5V
15
VGS = 2.5V
10
14
12
10
8
TA = 150°C
6
4
5
TA = 125°C
2
VGS = 2V
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.03
0.025
VGS = 4.5V
0.02
VGS = 10V
0.015
0.01
1
0
6
11
16
21
26
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
T A = 85°C
TA = 25°C
TA = -55°C
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
0.1
0.08
0.06
0.04
ID = 6.5A
0.02
31
0.05
ID = 6A
0
0
4
8
12
16
VGS, GATE-SOURCE CURRENT (V)
Figure 4 Typical Transfer Characteristics
20
1.8
VGS = 4.5V
VGS = 10V
ID = 6.5A
0.045
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCE INFORMATION
ADVANCED INFORMATION
25
VDS = 5.0V
18
VGS = 5V
TA = 150°C
0.04
TA = 125°C
0.035
T A = 85°C
0.03
0.025
TA = 25°C
0.02
TA = -55°C
0.015
1.6
1.4
VGS = 4.5V
ID = 6A
1.2
1
0.8
0.01
0.005
0
2
4
6
8 10 12 14 16 18
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMN3026LVT
Document number: DS36813 Rev. 3 - 2
20
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0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
April 2014
© Diodes Incorporated
DMN3026LVT
2
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.04
VGS = 4.5V
ID = 6A
0.03
VGS = 10 V
ID = 6.5A
0.02
0.01
1.8
1.6
ID = 250µA
1.4
ID = 1mA
1.2
1
0.8
0
-50
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
20
CT, JUNCTION CAPACITANCE (pF)
18
IS, SOURCE CURRENT (A)
16
14
T A = 150°C
12
10
TA = 125°C
8
T A = 25°C
TA = 85°C
6
4
T A = -55°C
2
0
0
f = 1MHz
1000
Ciss
100
Coss
Crss
10
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
100
ID, DRAIN CURRENT (A)
RDS(on)
Limited
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
ADVANCED INFORMATION
0.05
VDS = 15V
ID = 4 A
0
1
2
3 4 5 6 7 8 9 10 11 12 13
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN3026LVT
Document number: DS36813 Rev. 3 - 2
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10
PW = 10µs
DC
PW = 10s
1
PW = 1s
PW = 100ms
PW = 10ms
0.1
PW = 1ms
TJ(max) = 150°C
TA = 25°C
PW = 100µs
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
April 2014
© Diodes Incorporated
DMN3026LVT
D = 0.9
D = 0.7
D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
ADVANCED INFORMATION
1
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 97°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
TSOT26
Dim Min Max Typ
A
— 1.00 —
A1 0.01 0.10 —
A2 0.84 0.90 —
D
—
— 2.90
E
—
— 2.80
E1
—
— 1.60
b
0.30 0.45 —
c
0.12 0.20 —
e
—
— 0.95
e1
—
— 1.90
L
0.30 0.50 —
L2
—
— 0.25
θ
0°
8°
4°
θ1
4°
12°
—
All Dimensions in mm
D
e1
E
E1
L2
c
4x1
e
L

6x b
A
A2
A1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
C
C
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y1
Y (6x)
X (6x)
DMN3026LVT
Document number: DS36813 Rev. 3 - 2
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© Diodes Incorporated
DMN3026LVT
ADVANCE INFORMATION
ADVANCED INFORMATION
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DMN3026LVT
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