DMNH6012LK3Q Q MOSFET 60V 175°C N-CHANNEL ENHANCEMENT MODE Green Product Summary BVDSS RDS(ON) Max 60V 12mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V Features ID Max TC = +25°C 80A 70A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AECQ101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DC/DC Converters Top View Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures more Reliable and Robust End Application Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Finish Annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) Pin Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMNH6012LK3Q-13 Notes: Case TO252 (DPAK) Packaging 2500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H6012L YYWW DMNH6012LK3Q Document number: DS37431 Rev. 1 - 2 =Manufacturer’s Marking H6012L = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) 1 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6012LK3Q Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage TC = +25°C TC = +100°C Continuous Drain Current (Note 8), VGS = 10V Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) VDSS Value 60 Unit V VGSS ±20 V ID 80 60 A IDM 120 A Maximum Continuous Body Diode Forward Current (Note 8) IS 80 A Avalanche Current, L = 0.1mH (Note 9) IAS 45 A Avalanche Energy, L = 0.1mH (Note 9) EAS 100 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Value 2.0 Steady State RJA 74 °C/W PD 3.8 W Steady State RJA 40 RJC 1.2 TJ, TSTG -55 to +175 Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current, TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max BVDSS IDSS 60 — — V — — 1 µA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V IGSS — — ±100 nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250μA VGS(TH) RDS(ON) 1 — 3 — 8 12 — 10 18 Unit mΩ Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance VSD — 0.7 1.2 V Ciss — 1926 — pF Output Capacitance Reverse Transfer Capacitance Coss — 330 — — — 112 Gate Resistance Crss Rg 2.0 — — pF pF Total Gate Charge (VGS = 4.5V) Qg — 16.3 — nC Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Qg — nC — 35.2 7.6 — Qgs — Ω Qgd — 6.9 — nC nC — 6.4 — ns Turn-On Rise Time tD(ON) tR — 11.9 — ns Turn-Off Delay Time tD(OFF) — 16.5 — ns tF — ns — — 5 28 — tRR — — ns nC Turn-On Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: QRR 23 Test Condition VGS = 10V, ID = 25A VGS = 4.5V, ID = 25A VGS = 0V, IS = 1.7A VDS = 30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 25A VGS = 10V, VDS = 30V, Rg = 3Ω, ID = 25A IF = 25A, di/dt = 100A/μs IF = 25A, di/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. DMNH6012LK3Q Document number: DS37431 Rev. 1 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6012LK3Q Q 15 30.0 VGS=4.0V 12 ID, DRAIN CURRENT (A) 25.0 ID, DRAIN CURRENT (A) VDS=5V VGS=4.5V 20.0 VGS=10.0V 15.0 10.0 VGS=3.5V 5.0 9 6 125℃ 85℃ 150℃ 3 25℃ 175℃ VGS=3.0V -55℃ 0 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 1.5 3 25.00 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) Figure 1. Typical Output Characteristic 20.00 VGS=4.5V 15.00 10.00 VGS=10.0V 5.00 5 10 15 20 25 30 35 40 45 35 30 25 20 ID=25A 15 10 5 2 150℃ 175℃ 0.015 85℃ 0.01 25℃ -55℃ 0.005 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 125℃ 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMNH6012LK3Q Document number: DS37431 Rev. 1 - 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS=10V 4 40 50 0.02 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 3 of 7 www.diodes.com 2.4 2.2 2 VGS=10V, ID=25A 1.8 1.6 1.4 1.2 VGS=4.5V, ID=25A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature June 2016 © Diodes Incorporated 0.03 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMNH6012LK3Q Q 0.025 VGS=4.5V, ID=25A 0.02 0.015 0.01 VGS=10V, ID=25A 0.005 2.8 2.6 2.4 ID=1mA 2.2 2 ID=250μA 1.8 1.6 1.4 1.2 1 0 0.8 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 1000000 30 TJ=175℃ IS, SOURCE CURRENT (A) 25 VGS=0V, TA=125℃ 20 VGS=0V, TA=150℃ VGS=0V, TA=175℃ 15 VGS=0V, TA=85℃ VGS=0V, TA=25℃ 10 5 VGS=0V, TA=-55℃ IDSS, LEAKAGE CURRENT (nA) 100000 10000 TJ=125℃ 1000 100 TJ=85℃ 10 1 TJ=25℃ 0.1 0 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) 0 10 20 30 40 50 60 VDS, Drain-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakge Current vs. Voltage 1.2 Figure 9. Diode Forward Voltage vs. Current 10 10000 f=1MHz Ciss 8 1000 VGS (V) CT, JUNCTION CAPACITANCE (pF) TJ=150℃ 6 VDS=30V, ID=25A 4 Coss 100 2 Crss 0 10 0 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure: 11. Typical Junction Capacitance DMNH6012LK3Q Document number: DS37431 Rev. 1 - 2 4 of 7 www.diodes.com 0 5 10 15 20 25 30 Qg (nC) Figure 12. Gate Charge 35 40 June 2016 © Diodes Incorporated DMNH6012LK3Q Q 1000 1600 RDS(ON) Limited PW =1ms 1400 EAS, Avalanche Energy (mJ) ID, DRAIN CURRENT (A) 100 10 PW =10ms 1 0.1 0.01 PW =100ms TJ(MAX)=175℃ PW =1s TC=25℃ Single Pulse PW =10s DUT on 1*MRP board DC VGS=10V 0.01 0.1 1 ID=8A 1200 1000 800 600 400 200 0 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 14. Avalanche Energy vs. Junction Temperature r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.3 D=0.9 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t)=r(t) * RθJA RθJA=73.5℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.001 DMNH6012LK3Q Document number: DS37431 Rev. 1 - 2 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 15. Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 June 2016 © Diodes Incorporated DMNH6012LK3Q Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) E A b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) X1 Y1 Dimensions C X X1 Y Y1 Y2 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMNH6012LK3Q Document number: DS37431 Rev. 1 - 2 6 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6012LK3Q Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DMNH6012LK3Q Document number: DS37431 Rev. 1 - 2 7 of 7 www.diodes.com June 2016 © Diodes Incorporated