Panasonic DA3S101K0L Silicon epitaxial planar type Datasheet

Doc No. TT4-EA-11853
Revision. 5
Product Standards
Switching Diode
DA3S101K0L
DA3S101K0L
Silicon epitaxial planar type
Unit: mm
For high speed switching circuits
DA3J101K in SSMini3 type package
1.6
0.26
0.13
3
 Features
0.85
1.6
 Small reverse current IR
 Short reverse recovery time trr
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
0.7
 Marking Symbol: 21
(0.5) (0.5)
1.0
 Packaging
1. Anode
2. NC
3. Cathode
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward surge current
Junction temperature
Operating ambient temperature
Storage temperature
Note)
*1
VR
VRM
IF
IFM
IFSM
Tj
Topr
Tstg
Panasonic
JEITA
Code
Rating
Unit
80
80
100
225
500
150
-40 to +85
-55 to +150
V
V
mA
mA
mA
°C
°C
°C
SSMini3-F3-B
SC-89
SOT-490
Internal Connection
3
1
2
*1: t = 1 s
Page 1 of 4
Established : 2009-11-17
Revised
: 2013-06-14
Doc No. TT4-EA-11853
Revision. 5
Product Standards
Switching Diode
DA3S101K0L
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
Note)
VF
VR
IR
Ct
*1
trr
Conditions
Min
IF = 100 mA
IR = 100 μA
VR = 80 V
VR = 0 V , f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.25 x IR
Typ
Max
Unit
0.92
1.20
100
1.2
V
V
nA
pF
3
ns
80
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *1: trr test circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 μs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.25 × IR
IF = 10 mA
VR = 6 V
Page 2 of 4
Established : 2009-11-17
Revised
: 2013-06-14
Doc No. TT4-EA-11853
Revision. 5
Product Standards
Switching Diode
DA3S101K0L
Technical Data ( reference )
IF - VF
IR - VR
1.E-05
1.E-01
1.E-02
85 °C
1.E-03
25 °C
1.E-04
1.E-05
1.E-06
0.0
IR value is not exceeding
100 pA at -40 °C
Ta = 125 °C
Reverse current IR (A)
Forward current IF (A)
1.E+00
-40 °C
1.E-06
Ta = 125 °C
85 °C
1.E-07
1.E-08
25 °C
1.E-09
1.E-10
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
0
20
40
60
80
Reverse voltage VR (V)
Ct - VR
Terminal capacitance Ct (pF)
1.2
Ta = 25 °C
f = 1 MHz
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
Reverse voltage VR (V)
Page 3 of 4
Established : 2009-11-17
Revised
: 2013-06-14
Doc No. TT4-EA-11853
Revision. 5
Product Standards
Switching Diode
DA3S101K0L
SSMini3-F3-B
Unit: mm
+0.05
1.60-0.03
+0.05
0.13-0.02
+0.05
0.26-0.02
(5°)
2
(0.5) (0.5)
1.00±0.05
0.375±0.050
1
1.60±0.05
+0.05
0.85-0.03
3
0 to 0.1
(0.45)
+0.05
0.70-0.03
(5°)
 Land Pattern (Reference) (Unit: mm)
1.4
0.6
0.6
1.0
Page 4 of 4
Established : 2009-11-17
Revised
: 2013-06-14
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