ELC-410-34 Description ELC-410-34 is a bare LED chip die, emitting at 410nm. It is based on Sapphire substrate with an epitaxial layer of GAN based material. P + N electrodes facing up. Chips are delivered on adhesive film with wire-bond side top Maximum Ratings (Tamb = 25°C) Parameter Values Symbol Forward Current IF Max. 20 Peak Forward Current (tp≤50 µs) IFP 100 Min. Optical and Electrical Characteristics (T Parameter Emission Wavelength Symbol λpeak Spectral Width (FWHM) ∆λ Output Power PO Operating Voltage VF Reverse Current VR www.roithner-laser.com CASE = Min. 405 mA mA 25°C, IF = 20 mA) Values Typ. 410 Max. 415 30 4 Unit nm nm 6 3.5 -1- Unit mV 3.8 V 1 µA 05/12/12 Drawing Dimensions in µm Connection Lead Material N pad AU Alloy P pad AU Alloy © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice www.roithner-laser.com -2- 05/12/12