FFPF30UA60S tm 30 A, 600 V, Ultrafast ll Diode Features • Ultrafast Recovery trr = 90 ns (@ IF = 30 A) The FFPF30UA60S is a ultrafast ll diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial application. • Max Forward Voltage, VF = 2.2 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Boost Diode in PFC and Switching Mode Power Supply • Welding, UPS and Motor Control Application Pin Assignments TO-220F-2L 1. Cathode 1. Cathode 2. Anode 2. Anode Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage Parameter Rating 600 Unit V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 30 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG @ TC = 43oC 180 Operating and Storage Temperature Range A -65 to +150 o Rating Unit C Thermal Characteristics TC=25oC unless otherwise noted Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case o 2.5 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F30UA60S FFPF30UA60S TO220F - - 50 ©2009 Fairchild Semiconductor Corporation FFPF30UA60S Rev. A 1 www.fairchildsemi.com FFPF30UA60S 30 A, 600 V, Ultrafast ll Diode November 2009 Symbol TC=25oC unless otherwise noted Min. Typ. Max. Unit VF 1 IF = 30 A IF = 30 A Parameter TC = 25oC TC = 125oC - - 2.2 2.0 V IR1 VR = 600 V VR = 600 V TC = 25oC TC = 125oC - - 100 150 µA trr Irr Qrr IF = 30 A, di/dt = 200 A/µs TC = 25oC - - 90 8 360 ns A nC WAVL Avalanche Energy ( L = 40 mH) 20 - - mJ Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms ©2009 Fairchild Semiconductor Corporation FFPF30UA60S Rev. A 2 FFPF30UA60S 30 A, 600 V, Ultrafast ll Diode Electrical Characteristics www.fairchildsemi.com Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 100 100 o TC = 125 C Reverse Current , IR [µA] Forward Current, IF [A] 10 o o TC = 25 C TC = 125 C 10 o TC = 75 C 1 0.0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 0.1 o TC = 25 C 0.01 600 200 Typical Capacitance at 0V = 205pF IF = 30A Reverse Recovery Time, trr [ns] Capacitances , Cj [pF] 200 300 400 500 Reverse Voltage, VR [V] Figure 4. Typical Reverse Recovery Time vs. di/dt 200 150 100 50 0 0.1 TC = 75 C 0.001 100 2.5 Figure 3.Typical Junction Capacitance o 1 1 10 Reverse Voltage, VR [V] 160 o TC = 75 C 120 80 o TC = 25 C 40 100 100 o TC = 125 C 200 300 di/dt [A/µs] 400 500 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 15 40 Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] o TC = 125 C o TC = 75 C 10 o TC = 25 C 5 30 20 10 IF = 30A 0 100 200 300 di/dt [A/µs] ©2009 Fairchild Semiconductor Corporation FFPF30UA60S Rev. A 400 0 25 500 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFPF30UA60S 30 A, 600 V, Ultrafast ll Diode Typical Performance Characteristics FFPF30UA60S 30 A, 600 V, Ultrafast ll Diode Mechanical Dimensions TO-220F 2L ø3.18 ±0.10 2.54 ±0.20 3.30 ±0.10 10.16 ±0.20 (6.50) MAX1.47 15.87 ±0.20 (1.80) (1.00x45°) 12.00 ±0.20 9.75 ±0.30 15.80 ±0.20 6.68 ±0.20 (0.70) 2.76 ±0.20 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ±0.20] 9.40 ±0.20 +0.10 0.50 –0.05 4.70 ±0.20 2.54TYP [2.54 ±0.20] Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FFPF30UA60S Rev. A 4 www.fairchildsemi.com FFPF30UA60S 30 A, 600 V, Ultrafast ll Diode ©2009 Fairchild Semiconductor Corporation FFPF30UA60S Rev. A 5 www.fairchildsemi.com