JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8810 Dual N-Channel MOSFET TSSOP8 V(BR)DSS ID RDS(on)MAX 20mΩ@10 V 22mΩ @4.5V 20V 24 mΩ@3.8V 7A 26mΩ @2.5V 35mΩ@1.8V DESCRIPTION The CJS8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: S8810 YY S8810= Device code , YY=Date Code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A Pulsed Drain Current IDM * 30 A Thermal Resistance from Junction to Ambient RθJA 125 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ Continuous Drain Current *Repetitive rating：Pluse width limited by junction temperature. www.cj-elec.com 1 J,Jul,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA 1 V Gate threshold voltage (note 1) Drain-source on-resistance (note 1) VGS(th) RDS(on) VDS =VGS, ID =250µA 20 V 0.4 VGS =10V, ID =7A 14 20 mΩ VGS =4.5V, ID =6.6A 16 22 mΩ VGS =3.8V, ID =6A 17 24 mΩ VGS =2.5V, ID =5.5A 20 26 mΩ VGS =1.8V, ID =5A 28 35 mΩ Forward tranconductance (note 1) gFS VDS =5V, ID =7A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V 9 S 1 V DYNAMIC PARAMETERS (note 2) 1150 pF 185 pF Crss 145 pF Total gate charge Qg 15 nC Gate-source charge Qgs 0.8 nC Gate-drain charge Qgd 3.2 nC td(on) 6 ns VGS=5V,VDD=10V, 13 ns RL=1.35Ω,RGEN=3Ω 52 ns 16 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =7A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 J,Jul,2015 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics 20 10 Pulsed 9 10V 3.0V VDS=16V Pulsed 8 15 (A) ID 6 DRAIN CURRENT DRAIN CURRENT 7 ID (A) 2.0V 10 1.5V 5 4 Ta=100℃ 3 5 2 VGS=1.2V 1 0 0 2 4 6 RDS(ON) —— 50 10 8 DRAIN TO SOURCE VOLTAGE VDS Ta=25℃ 0 0.0 0.5 (V) 1.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 350 —— 1.5 VGS (V) VGS Ta=25℃ Pulsed (mΩ) 300 VGS=1.8V 40 RDS(ON) ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) Ta=25℃ Pulsed 30 VGS=2.5V 20 200 ID=7A 150 100 50 VGS=10V 10 0 1 2 3 4 DRAIN CURRENT 5 6 ID 7 2 4 6 8 GATE TO SOURCE VOLTAGE (A) IS —— VSD 7 250 VGS 10 (V) Threshold Voltage 800 Ta=25℃ Pulsed 0.01 1E-3 1E-4 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 700 VTH 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (mV) 1 1.0 600 ID=250uA 500 400 25 1.2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) J,Jul,2015 6\PERO ' 'LPHQVLRQV,Q0LOOLPHWHUV Max Min Max ( E F ( $ $ / + © $ H 'LPHQVLRQV,Q,QFKHV Min ˄%6&˅ 7 <3 e %6& 7 <3 e e e JIJul5 TSSOP8 Tape and Reel www.cj-elec.com 5 J,Jul,2015