, One. 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 U.S.A. FAX: (973) 376-8960 D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulator's and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits. Features 15A COMPLEMENTARY SILICON • Fast Switching tf = 90 ns i Max i • Key Parameters Specified (a 100 C • Low Collector-Emitter Saturation Voltage V C E ( S a t ) = l - O V ( M a x i @ 8.0 A • Complementary Pairs Simplify Circuit Designs POWER TRANSISTORS 80 V, 83 W MARKING DIAGRAM o MAXIMUM RATINGS Hating Collector-Emitter Voltage Symbol Value Unit VCEO 80 Vdc Collector-Emitter Voltage VCEV ••:•: Vdc Emitter Base Voltage VEE 7.0 Vdc 15 20 Adc 83 0.67 :. w c c Collector Current -Continuous -Peak (Note 1 ) "otal Power Dissipation ; ~- = 25 C Derate above 25 C Operating and Storage Junction "^•"oerature Range PD Ji s:c -55 to 150 STY LEI PIN1. BASE 2. COLLECTOR 3 [MIT'cH 4. COLLECTOR D4xVH10G AYWW I TO-220AB x A Y WW = 4 or 5 = Assemb^f Location = Year = Work Week THERMAL CHARACTERISTICS Characteristic "hermal Resistance. Junction to Case Symbol Max Unit H jo 1.5 C A 62.5 . .'. ~ierr^al Resistance. Junction to Ambient Maximum Lead "emperature for Soldering Purposes: 1 .'8" from Case tor 5 Seconds - 275 St'esses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Width 6.0ms, Duty Cycle 50°o. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without nonce. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders Quality Semi-Conductors D44VH10 (NPN), D45VH10 (PNP) ELECTRICAL CHARACTERISTICS (Tc = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max VcEOfsus) 80 - - - - 10 100 - - 10 35 20 - - Unit OFF CHARACTERISTICS Collector- Emitter Sustaining Voltage (Note 2 ' . ,; = 25 mAdc. IB = 0) Collector-Emitter Cutoff Current (V CE = Rated VCEy. VBE.0~, = 4.0 Vdc) (VCE = Rated VCEV. VBE:0"; = 4.0 Vdc. ~c = 100 C> ICEV Emitter Base Cutoff Current iV== = 7.0 Vdc. : c = 0) 'EBC Adc Adc ON CHARACTERISTICS (Note 2) hpE DC Current Gain (lc = 2.0 Adc. V C E = 1.0 Vdc) = 4.0 Adc. V C E = 1.0 Vdc) Vdc Collector- Emitter Saturation Voltage (lc = 8.0 Adc. IB = 0.4 Adc) • : = 8.0 Adc, IB = 0.8 Adc) (lc = 15 Adc, IB = 3.0 Adc. ^c = 100 C) D44VH10 D45VH10 D44VH10 D45VH10 Base-Emitter Saturation Voltage (lc = 8.0 Adc, IB = 0.4 Adc) (lc = 8.0 Adc. IB = 0.8 Adc) ; = 8.0 Adc. IB = 0.4 Adc, ~c = 100 C) c = 8.0 Adc. IB = 0.8 Adc. Tc = 1CK " - - 0.4 1.0 0.8 1.5 Vdc VBE:SS! D44VH1 0 D45VH10 D44VH10 D45VH1 0 - 1.2 1.0 1.1 1.5 DYNAMIC CHARACTERISTICS f- Current Gain Bandwidth Product (lc = 0.1 Adc. V CE = 10 Vdc. f = 20 MHz'. Output Capacitance (V CB = 10 Vdc, I- = 0 W = LOMHzi - 5: - - 120 275 - - - 50 - 250 - 700 - 90 D44VH10 D45VH10 SWITCHING CHARACTERISTICS Delay Time Rise ~ime Storage Time ta (Vcc = 20 Vdc. lc = 8.0 Adc. IB- = iB2 = 0.8 Adc) is •' Fall ~ime 2. Pulse Test: Pulse Width tr 300 s. Duty Cycle 2°o. MHz TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. D0201YR DIAC The 00201 bidirectional trigger diode is a low cost PNPN element suitable for triggering TRIAC's. These parts are fabricated using TAG'S high performance glassivated process and are intended for high volume applications. DO 35 Absolute Maximum Ratings Parameter Part Nr. TA—25 °C unless otherwise noted Symbol Min. Nom. Break-Over Voltage D0201YR Peak Current Operating Temperature Storage Temperature Soldering Temperature VBO IP 29 32 Electrical Characteristics TA = 25°C unless otherwise noted Parameter Symbol AVeo IBO Vp Break-Over Voltage Symmetry Break-Over Current Peak Output Voltage Tj -4O Tstg Tsld -40 Figure 1 Max. 35 2 125 125 250 Min. Unit V Test Conditions A °C 10 ps pulse, 120 Hz repetition Figure 2 °c °c Max. Unit 3 V 50 pA V 5 Figure 2 1 f ^^^ ^«—— _ U CT=27 nFsee Figure 3 CT = 0.1 pF see Figure 3 ^ D0201YR HT oV^ f-o—W—o— + V(BO) Breakover Voltage V(BO) Test Conditions Figure 3 V: Voltage 1.6 mm from case, 10s max. O' /^\ \J=^- -V(BO) _CT O1 _^_^ ^^^^ 20Q" l|—j— Breakover • 11 Current >y / RL : VP ~| I(BO) -V(BO) T . -IP 1 O 4 I NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors