JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP15H03 N-Channel Power MOSFET DESCRIPTION TO-220-3L-C The CJP15H03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a 1. GATE 2. DRAIN 3. SOURCE wide variety of applications. FEATURES z High density cell design for ultra low RDS(ON) z Excellent package for good heat dissipation z Fully characterized Avalanche voltage and current z Special process technology for high ESD capability z Good stability and uniformity with high EAS z Uninterruptible Power Supply APPLICATIONS z Power switching application z Hard switched and high frequency circuits EQUIVALENT CIRCUIT MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 150 A Pulsed Drain Current IDM 600 A 1700 mJ PD 2 W RθJA 62.5 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Parameter Single Pulsed Avalanche Energy EAS Power Dissipation Thermal Resistance from Junction to Ambient (1) (1).EAS condition: VDD=20V,L=1mH, RG=25Ω, Starting TJ = 25°C www.cj-elec.com 1 A-2,Mar,2015 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Symbol Test Condition V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 2.5 V Static drain-source on-sate resistance RDS(on) Parameter Min Typ Max Unit Off characteristics Drain-source breakdown voltage 30 V On characteristics (note1) Forward transconductance gFS 1.2 VGS =10V, ID =20A 2.3 3 mΩ VGS =4.5V, ID =10A 3.2 4 mΩ VDS =10V, ID =20A 32 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 5000 VDS =15V,VGS =0V, f =1MHz pF 1135 563 Switching characteristics (note 2) Total gate charge Qg 38 VDS=15V, VGS=10V, Gate-source charge Qgs Gate-drain charge Qgd 13 Turn-on delay time td(on) 26 Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) ID=30A VDD=15V, ID=2A VGS=10V,RG=2.5Ω, RL=15Ω tf nC 9 24 ns 91 39 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current (note3) Pulsed drain-source diode forward current VSD VGS =0V, IS=150A 1.2 V IS 150 A ISM 600 A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. 3. Surface Mounted on FR4 Board, t≤10 sec. www.cj-elec.com 2 A-2,Mar,2015 Typical Characteristics Transfer Characteristics Output Characteristics 1000 1000 VDS=15V Pulsed 20us Pulsed Width (A) VGS= 3.3V VGS= 3.0V 10 VGS= 2.7V 1 1 2 3 4 5 6 7 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS 8 9 4 5 6 GATE TO SOURCE VOLTAGE Pulsed ID=20A (m) 10 RDS(ON) VGS=4.5V 2.0 VGS=10V 9 8 7 6 5 Ta=100℃ 4 3 2 Ta=25℃ 1.5 1 10 0 20 30 40 DRAIN CURRENT 50 ID 60 70 0 80 3 (A) 4 5 200 8 VGS 9 10 (V) Threshold Voltage 2.50 Pulsed (V) 2.25 VTH 10 Ta=100℃ Ta=25℃ THRESHOLD VOLTAGE IS (A) 100 7 6 GATE TO SOURCE VOLTAGE IS —— VSD SOURCE CURRENT 8 (V) 11 Pulsed 2.5 1.0 7 VGS RDS(ON)—— VGS ID ON-RESISTANCE (m) RDS(ON) ON-RESISTANCE 3 12 4.5 3.0 2 (V) Ta=25℃ 3.5 100 10 10 5.0 4.0 Ta=25℃ ID VGS= 3.5V 100 DRAIN CURRENT DRAIN CURRENT ID (A) VGS= 3.7V 1 0.1 2.00 1.75 ID=250uA 1.50 1.25 1.00 0.75 0.50 0.25 0.01 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 800 1000 0.00 25 1200 VSD (mV) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A-2,Mar,2015 TO-220-3L-C Package Outline Dimensions Symbol A A1 b b1 c c1 D E E1 e e1 F H h L L1 V Φ www.cj-elec.com Dimensions In Millimeters Min. Max. 4.400 4.600 2.250 2.550 0.710 0.910 1.170 1.370 0.330 0.650 1.200 1.400 9.910 10.250 8.950 9.750 12.650 12.950 2.540 TYP. 4.980 5.180 2.650 2.950 7.900 8.100 0.000 0.300 12.900 13.400 2.850 3.250 7.500 REF. 3.400 3.800 4 Dimensions In Inches Min. Max. 0.173 0.181 0.089 0.100 0.028 0.036 0.046 0.054 0.013 0.026 0.047 0.055 0.390 0.404 0.352 0.384 0.498 0.510 0.100 TYP. 0.196 0.204 0.104 0.116 0.311 0.319 0.000 0.012 0.508 0.528 0.112 0.128 0.295 REF. 0.134 0.150 A-2,Mar,2015