NJSEMI C398E High speed silicon controlled rectifier Datasheet

TELEPHONE: (201) 376-2922
(212) 227-6005
TELEX: 13-8720
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
HIGH SPEED
Silicon
Controlled Rectifier
C397/C398
1200 Volts, 650 A RMS
MAXIMUM ALLOWABLE RATINGS
TYPES
REPETITIVE PEAK OFF-STATE
VOLTAGE, V D R M '
Tj - -40°C to +125'C
REPETITIVE PEAK REVERSE
VOLTAGE, V R R M >
Tj - -40°C to -M25°C
NON-REPETITIVE PEAK
REVERSE VOLTAGE, V R S M '
Tj - 125°C
C397/C398E
C397/C398M
C397/C398S
C397/C398N
C397/C398T
C397/C398P
C397/C398PA
C397/C398PB
500 Volts
600
700
800
900
1000
1100
1200
500 Volts
600
700
800
900
1000
1100
1200
600 Volts
720
840
960
1080
1200
1300
1400
' Half sine wave waveform, 10 IDS max. pulse width.
Peak One Cycle Surge (Non-Repetitive) On-State C u r r e n t , I TSM
I 2 t (for fusing) for times > 1.5 milliseconds
I 2 t (for fusing) for limes > 8.3 milliseconds
Critical Rntc-of-Rise of On-State Current, Non-Repetitive
Critical Rate-of-Rise of On-State C u r r e n t , Repetitive
Average Gate Power Dissipation, PG(AV)
Storage Temperature, T s t p
Operating Temperature, Tj
Mounting Force Required
Quality Semi-Conductors
'•
7500 Amperes
95,000 (RMS Ampere) 2 Seconds
230,000 (RMS Ampere) 2 Seconds
800 A/^s t
500 A/MS f
2 Watts
-40°C to +150°C
, -40°C to +125°C
2000 Lb, ± 10%
8.9 KN ± 10%
I C397/C398
CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current
Repetitive Peak Reverse
and Off-State C u r r e n t
SYMBOL
MIN.
'KKM
and
'DRM
TYP.
MAX.
UNITS
5
20
mA
TEST CONDITION
Tj - +25°C
V = VDRM = V R R M
"
'HUM
20
45
mA
Tj = 125°C
and
'DKM
Thermal Resistance
ROJC
Critical Rate-of-Rise of
Off-State Voltage (Higher
values may cause device
switching)
dv/dt
v = VDKM
.05
200
.06
0 07 W a t t
V/jjsec
500
= VRKM
Junction-to-Case (DC) (Double-Side Cooled)
Tj = 125°C, Gate Open. V D R M = Rated,
Linear or Exponential Rising Waveform.
F v n n n e n t n ! d v / d t - UI *M ( rtT>1
Hipier minimum ilv/clt selections available - consult factory.
DC Gate Trigger Current
DC Gate Trigger Voltage
mAdc
-
150
300
125
-
3
5
Vdc
1.25
3,0
-
-
V-,-M
2.7
3.0
Volts
Tc = •'•25"C, I i-M = 3000 Amps Peak.
D u t y Cycle < .01%. Pulse W i d t h = 1 ms.
t,i
0.5
"
fj SO C
Tc = +25°C, I T M = 50 Adc, V D R M . G a t e
S u p p l y : 20 v o l t open c i r c u i t , 20 ohms, 0.1
/usec max. rise t i m e , f t . t t t
VGT
_
0. ! 5
Peak On-State Voltage
Turn-On Delay Time
Conventional Circuit
Commutatcd Turn-Off
Time (with Reverse
Voltage)
-
C39S
C397
C398
C397
Tc =
20
t
35
t
30
40
45
CO
•-
'10
t
60
t
Tc = -40°C to 25°C, V D = 6 Vdc,
R L = 3 Ohms
Tc- = 25°C to + I 2 5 ° C , V D = 6 Vdc,
RL = •' O h m s
TC = I 2 5 ° C , V m u i , R,. = 1000 Ohms
(1)
(2)
(3)
(4)'
(5)
Tc = + 1 2 5 ° C
I T M = 500 Amps.
V R = 50 Volts Min.
V|i RM ( R e a p p l i e d )
Rate-of-rise of reappb'ed off-state
voltage = 20 V/^sec (linear)
(6) C o m m u t a t i o n cli/ilt = 25 Amps/^(sec
(7) R e p e t i t i o n rate = 1 pps,
( 8 ) G a t e bias d u r i n g t u r n - o f f interval =
0 volts, 100 o h m s
(1)
C)
(3)
(4)
(5)
T r = +125°C
ITM = SOO Amps.
V R = 50 Volts Min.
VI)KM (Reapplied)
Rate-of-rise of reappliecl off-state
v o l t a p e = 200 V/AISL-C ( l i n e a r )
( 6 ) C o m m u t a t i o n d i / d t = 25 Amps/yl/sec
(7) R e p e t i t i o n r a t e = 1 pps.
8) G a t e b i a s d u r i n g t u r n - o f f i n t e r v a l =
0 v o l t s , 100 o h m s
A' sec
l i](ilioili-)
-40°C, V D = 6 Vdc, R L = 3 Ohms
Tc = +125°C, V D = 6 Vdc, R L = 3 Ohms
/jsec
'q
C398
C397
Conventional C i r c u i t
Commutated Turn-Off
Time ( w i t h Feedback
Diode)
Tc = +25°C, V D = 6 Vdc, R L = 3 Ohms
50
75
IS
IGT
(1)
(2)
3)
4)
(5)
Tc = +125°C
I TM = ^00 Amps
V,, = 1 Volt
VDRW (Reapplied)
Rate-of-rise ol r e n p p l i v d off-state
voltage = 200 V/A/sec ( l i n e a r )
(6) C o m m u t a t i o n d i / d t = 25 Amps//Jsec
7) R e p e t i t i o n r a t e = 1 pps.
(8) Gate bias d u r i n g t u r n - o f f interval =
0 volts, 100 ohms
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