Vishay DG2613 Low-voltage, low ron, spdt audio switch with negative swing capability Datasheet

DG2612, DG2613
Vishay Siliconix
Low-Voltage, Low RON, SPDT Audio Switch
with Negative Swing Capability
DESCRIPTION
FEATURES
The DG2612, DG2613 is a low on-resistance, single-pole/
double-throw monolithic CMOS analog switch with negative
signal swing capability. It is designed for low voltage
applications. The DG2612, DG2613 is ideal for portable and
battery powered equipment, requiring high performance and
efficient use of board space. In additional to the low
on-resistance (1.0 Ω at 2.7 V), the DG2613 has a typical off
isolation and crosstalk of - 67 dB and - 73 dB respectively.
The DG2612, DG2613 is built on Vishay Siliconix’s low
voltage process.
Break-before-make is guaranteed.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product with
the lead (Pb)-free device terminations. For analog switching
products manufactured with 100 % matte tin device
terminations, the lead (Pb)-free “-E3” suffix is being used as
a designator.
• Low voltage operation (1.8 V to 5.5 V)
• Low on-resistance - RON: 1.0 Ω at 2.7 V
• High bandwidth
BENEFITS
•
•
•
•
Negative signal swing capability
Shunt switch to eliminate switching noise
Simplified design with direct DC coupling
Space saving SC-89 package
APPLICATIONS
•
•
•
•
Cellular phones
Portable multimedia players
PDAs and hand-held devices
Laptop computers
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2612
TRUTH TABLE
IN
1
6
NO (Source1)
V+
2
5
COM
GND
3
4
NC (Source2)
Top View
Device Marking: Dx
Ax
Pin 1
IN
1
6
NO (Source1)
V+
2
5
COM
GND
3
4
NC (Source2)
NC
NO
0
ON
OFF
1
OFF
ON
COMMERCIAL ORDERING INFORMATION
x = Date/Lot Traceability Code
DG2613
Logic
Temp Range
Package
Part Number
- 40 °C to 85 °C
SC-89 (SOT-666)
Lead (Pb)-free
with Tape and Reel
DG2612DX-T1-E3
DG2613DX-T1-E3
Top View
Device Marking: Ex
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
V+
Reference GND
- 0.3 to (V+ + 0.3)
INa
COM, NC,
Limit
Unit
- 0.3 to + 6
NOa
V
(V+ - 6) to (V+ + 0.3)
Continuous Current (NO, NC, COM pins)
± 150
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 300
mA
Storage Temperature
D Suffix
- 65 to 150
°C
Power Dissipation (Packages)b
SC-89c
172
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.15 mW/°C above 70 °C.
Document Number: 74339
S-83070-Rev. C, 29-Dec-08
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DG2612, DG2613
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve
Limits
- 40 °C to 85 °C
Temp.a
Min.b
Typ.c
Full
V+ - 5.5
Max.b
Unit
V+
V
1.4
1.6
0.1
Ω
Analog Switch
Analog Signal Ranged
On-Resistance
RON Matchd
d
RON Flatness
Shunt Switch Resistance
Switch Off Leakage Current
VNO, VNC,
VCOM
RON
ΔRON
RON
Flatness
RSH
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 2.7 V, VCOM = - 1 V/0 V/1 V/2 V
INO, INC = 10 mA
Room
Full
Room
1.0
Room
INO or INC = 10 mA, V+ = 2.7 V, DG2612 only
V+ = 3.3 V,
VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Full
Room
Full
Room
Full
Room
Full
0.3
150
-2
- 100
-2
- 100
-2
- 100
300
2
100
2
100
2
100
Ω
nA
Digital Control
Input High Voltage
VINH
V+ = 1.8 V to 2.0 V
1.0
V+ = 2.7 V to 3.6 V
1.4
V+ = 4.2 V to 5.5 V
V+ = 1.8 V to 2.0 V
Input Low Voltage
VINL
Full
2.0
0.4
V+ = 2.7 V to 3.6 V
0.5
V+ = 4.2 V to 5.5 V
Input Capacitance
Input Current
IINL or IINH
0.8
5
Full
Cin
V
VIN = 0 or V+
Full
VNO or VNC = 1.5 V, RL = 50 Ω, CL = 35 pF
Room
Full
Room
Full
Room
1
pF
1
µA
Dynamic Characteristics
34
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
tBBM
Charge Injectiond (DG2613)
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω
Room
2.4
Off-Isolationd
OIRR
- 61
Crosstalkd
XTALK
RL = 50 Ω, CL = 5 pF, f = 100 kHz
DG2612
Room
Room
- 67
RL = 50 Ω, CL = 5 pF, f = 100 kHz
DG2613
Room
- 67
Room
- 73
Room
36
Room
95
d
OIRR
NO, NC Off Capacitanced
XTALK
CNO(off)
CNC(off)
CON
Off-Isolation
Crosstalkd
Channel-On Capacitanced
Power Supply
Power Supply Range
V+
Power Supply Current
I+
VIN = 0 or V+, f = 1 MHz
10
4
ns
16
1.8
VIN = 0 or V+
60
63
35
37
0.01
pC
dB
dB
pF
5.5
V
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74339
S-83070-Rev. C, 29-Dec-08
DG2612, DG2613
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
2.0
2.4
T = 25 °C
IS = 10 mA
2.2
1.8
V+ = 1.8 V
1.8
V+ = 2.0 V
1.6
V+ = 2.7 V
V+ = 3.0 V
V+ = 3.6 V
1.4
1.2
V+ = 2.7 V, IS = 10 mA
+ 85 °C
+ 25 °C
- 40 °C
1.6
V+ = 4.5 V
V+ = 5.0 V
V+ = 5.5 V
1.0
0.8
0.6
RON - On-Resistance (Ω)
R ON - On-Resistance (Ω)
2.0
1.4
1.2
1.0
0.8
0.6
0.4
0.4
0.2
0.2
0.0
-4 -3
-2
-1
0
1
2
3
4
5
0.0
-3
6
-2
-1
VCOM - Analog Voltage (V)
RON vs. VCOM and Supply Voltage
3
4
DG2613
VIN = 0 V
I+ - Supply Current (pA)
I+ - Supply Current (pA)
2
100 000
DG2612
VIN = 0 V
10 000
V+ = 5.5 V
1000
V+ = 3.6 V
10 000
V+ = 5.5 V
1000
V+ = 3.6 V
100
100
- 40
- 20
0
20
40
60
80
10
- 60
100
- 40
- 20
0
20
40
60
Temperature (°C)
Temperature (°C)
Supply Current vs. Temperature
Supply Current vs. Temperature
100 000
80
100
40
V+ = 2.7 V
tON, tOFF, - Switching Time (ns)
35
10 000
Leakage Current (pA)
1
RON vs. Analog Voltage and Temperature
100 000
10
- 60
0
VCOM - Analog Voltage (V)
ICOM(on)
1000
INO(off)
100
ICOM(off)
10
tON V+ = 3.0 V
30
25
20
15
tOFF V+ = 3.0 V
10
5
1
- 60
- 40
- 20
0
20
40
60
80
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 74339
S-83070-Rev. C, 29-Dec-08
100
0
- 60
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Switching Time vs. Temperature and Supply Voltage
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DG2612, DG2613
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10
10
LOSS
LOSS
0
0
- 20
LOSS, OIRR, XTALK (dB)
LOSS, OIRR, XTALK (dB)
- 10
XTALK
OIRR
- 30
- 40
- 50
- 60
DG2612
V+ = 3.0 V
RL = 50 Ω
- 70
- 80
100K
1M
10M
100M
- 10
- 20
- 30
XTALK
- 40
OIRR
- 50
- 60
DG2613
V+ = 3.0 V
RL = 50 Ω
- 70
- 80
100K
1G
1M
10M
100M
1G
Frequency (Hz)
Frequency (Hz)
Insertion Loss, Off-Isolation, Crosstalk vs.
Frequency
Insertion Loss, Off-Isolation, Crosstalk vs.
Frequency
40
2
Q - Charge Injection (pC)
30
V+ = 3 V
V+ = 2 V
V+ = 5 V
20
10
0
VT - Switching Threshold (V)
DG2613
1.5
1
0.5
- 10
- 20
- 4.0 - 3.0 - 2.0 - 1.0
0.0
1.0
2.0
3.0
4.0
0
1.0
5.0
2.0
VCOM - Analog Voltage (V)
3.0
4.0
5.0
6.0
V+ - Supply Voltage (V)
Charge Injection vs. Analog Voltage
Switching Threshold vs. Supply Voltage
TEST CIRCUITS
V+
+3V
Logic
Input
V+
Switch
Input
NO or NC
tr < 5 ns
tf < 5 ns
0V
Switch Output
COM
VOUT
0.9 x V OUT
IN
Logic
Input
50 %
RL
50 Ω
GND
CL
35 pF
Switch
Output
0V
tON
tOFF
0V
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = VCOM
RL
R L + R ON
Figure 1. Switching Time
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Document Number: 74339
S-83070-Rev. C, 29-Dec-08
DG2612, DG2613
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
tr < 5 ns
tf < 5 ns
0V
COM
NO
VNO
3V
VO
NC
VNC
RL
50 Ω
IN
CL
35 pF
VNC = VNO
VO
GND
Switch
Output
90 %
0V
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
ΔVOUT
V+
VOUT
NC or NO
COM
VOUT
+
IN
IN
Vgen
CL
3V
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
V+
10 nF
V+
COM
IN
COM
0 V, 2.4 V
NC or NO
VNC/ NO
RL
Off Isolation = 20 log
GND
VCOM
Analyzer
Figure 4. Off-Isolation
Document Number: 74339
S-83070-Rev. C, 29-Dec-08
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DG2612, DG2613
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74339.
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Document Number: 74339
S-83070-Rev. C, 29-Dec-08
Package Information
Vishay Siliconix
L3
SCĆ89: 6ĆLEAD (SOTĆ666)
D
A
b
L1
e
L2
E
E1
B
Pin 1
0.10 M
C
A
B
b1
e1
q (4 )
A3
A
NOTES:
1. All dimensions are in millimeters.
2.
Package outline exclusive of mold flash and metal burr.
3.
Package outline inclusive of plating.
4.
Maximum webbing flash remain 0.075 mm.
C
MILLIMETERS*
Dim
A
A3
b
b1
D
E
E1
e
e1
L1
L2
L3
q
INCHES
Min
Nom
Max
Min
Nom
Max
0.56
–
0.60
0.022
–
0.024
0.13
0.17
0.18
0.005
0.006
0.007
0.17
–
0.25
0.006
–
0.010
–
0.27
0.34
–
0.011
0.013
1.50
1.66
1.70
0.059
0.065
0.067
1.50
1.65
1.70
0.059
0.065
0.067
1.10
1.20
1.30
0.043
0.047
0.051
0.50 BSC
0.020 BSC
0.20
–
–
0.008
–
–
0.11
0.19
0.26
0.004
0.007
0.010
0.10
0.23
0.30
0.004
0.009
0.012
0.05
0.10
–
0.002
0.004
–
8_
10_
12_
8_
10_
12_
ECN: S-52444—Rev. D, 28-Nov-05
DWG: 5891
*Use millimeters as the primary measurement
Document Number: 72067
28-Nov-05
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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