Comchip CJ2101-G Mosfet Datasheet

Comchip
MOSFET
SMD Diode Specialist
CJ2101-G
RoHS Device
V(BR)DSS
RDS(on)MAX
SOT-323
ID
100mΩ @ -4.5V
-20V
140mΩ @ -2.5V
0.087(2.20)
0.079(2.00)
-1.4A
D
210mΩ @ -1.8V
0.053(1.35)
0.045(1.15)
G
0.055(1.40)
0.047(1.20)
S
0.006(0.15)
0.003(0.08)
Features
0.043(1.10)
0.035(0.90)
- P-Channel MOSFET
0.096(2.45)
0.085(2.15)
- Leading trench technology for low RDS(on)
extending battery life
0.004(0.10)
0.000(0.00)
0.016(0.40)
0.008(0.20)
0.017(0.425)REF.
Mechanical data
Dimensions in inches and (millimeter)
- Case: SOT-323, molded plastic.
Circuit diagram
- Terminals: Solderable per MIL-STD-750,
method 2026.
- 1. GATE
- 2. SOURCE
- 3. DRAIN
- Weight: 0.008 grams(approx.).
3
D
1
G
S
2
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Symbol
Value
Unit
Drain-source voltage
VDS
-20
V
Gate-source voltage
VGS
±8
V
ID
-1.4
Pulsed drain current (tp=10µs)
IDM
-3.0
Power dissipation
PD
0.29
W
RΘJA
431
°C/W
Junction temperature range
TJ
150
°C
Storage temperature range
TSTG
-50 ~ +150
°C
Parameter
Continuous drain current
A
Thermal resistance from junction to ambient
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MOSFET
SMD Diode Specialist
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-source breakdown voltage
VDSS
VGS = 0V , ID = -250µA
Gate-source leakage
IGSS
VDS = 0V , VGS = ±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS = -20V , VGS = 0V
-1
µA
-20
V
OFF CHARACTERISTICS (note 1)
Gate-source threshold voltage
Drain-source on-state resistance
VGS(th)
RDS(on)
VDS = VGS , ID = -250µA
-0.45
V
-0.7
VGS = -4.5V , ID = -1.0A
100
VGS = -2.5V , ID = -0.5A
140
VGS = -1.8V , ID = -0.3A
210
mΩ
CHARGE AND CAPACITANCES (note 3)
Input capacitance
ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
640
VDS = -8.0V , VGS = 0V,
f = 1MHZ
pF
120
82
SWITCHING CHARACTERISTICS (note 2,3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
6.2
VGS = -4.5V , VDD = -4.0V
15
ID = -1.0A , Rg = 6.2Ω
26
nS
18
tf
DRAIN-SOURCE BODY DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0V, IS = -0.3A
-0.62
-1.2
V
Notes:
1. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Switching characteristics are independent of operating junction temperature.
3. These parameters have no way to verify.
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MOSFET
SMD Diode Specialist
RATING AND TYPICAL CHARACTERISTIC CURVES ( CJ2101-G )
Fig.2 - Transfer Characteristics
Fig.1 - Output Characteristics
-10
-10
Ta=25°C
VGS=-2.2V
-8
-8
VGS=-2.0V
Drain Current, ID (A)
Drain Current, ID(A)
Ta=25°C
Pulsed
VGS=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V
Pulsed
-6
VGS=-1.8V
VGS=-1.6V
-4
-6
-4
VGS=-1.4V
-2
-2
VGS=-1.2V
VGS=-1.0V
-0
-0
-0
-1
-3
-2
-4
-0
-5
-1
-2
-3
Gate to Source Voltage,VGS (V)
Drain to Soruce Voltage, VDS (A)
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
200
120
Ta=25°C
Pulsed
Ta=25°C
VGS=-1.8V
ON-Resistance, RDS(ON) ( mΩ )
Pulsed
ON-Resistance, RDS(ON) ( mΩ )
-4
150
VGS=-2.5V
100
VGS=-4.5V
0
100
ID=-1.0A
80
ID=-0.5A
ID=-0.3A
60
0
-0
-4
-2
-8
-6
-10
-0
Drain Current, ID (A)
-6
-12
-18
Gate to Source Voltage, VGS (V)
Fig.5 - IS — VSD
-4
Source Current, Is ( A)
-1
-0.1
Ta=25°C
-0.01
-0.2
Pulsed
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
Source to Drain Voltage, VSD (V)
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MOSFET
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Reel Taping Specification
P1
F
E
d
P0
XXX
1
W
B
3
2
C
A
P
12
o
0
D2
D1
D
W1
SOT-323
SOT-323
SYMBOL
A
B
C
d
D
D1
D2
(mm)
2.25 ± 0.05
2.55 ± 0.05
1.19 ± 0.05
1.55 ± 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.089 ± 0.002
0.100 ± 0.002
0.047 ± 0.002
0.061 ± 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30/-0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012/-0.004 0.484 ± 0.039
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MOSFET
SMD Diode Specialist
Marking Code
3
Part Number
Marking Code
CJ2101-G
TS1
XXX
1
2
xxx = Product type marking code
Suggested PAD Layout
A
SOT-323
SIZE
(mm)
(inch)
A
0.50
0.020
B
0.80
0.031
C
1.30
0.012
D
2.20
0.087
E
3.00
0.118
B
D
E
C
Standard Packaging
REEL PACK
Case Type
SOT-323
REEL
Reel Size
( pcs )
(inch)
3,000
7
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