ASB ASX1437 Ku band power amplifier mmic Datasheet

ASX1437
ASX1437 Data Sheet
Ku Band Power Amplifier MMIC
1. Product Overview
1.1 General Description
ASX1437 is a three-stage internally matched MMIC Power Amplifier which operates between 13.5 GHz
and 14.5 GHz frequency range. This product is well suited for VSAT applications.
1.2 Features
 Frequency Range: 13.5 – 14.5 GHz
 Saturated Output Power: 37 dBm
 Small Signal Gain: 21 dB
 Bias: VDD = +7 V, IDD = 1300 mA, VGG = -0.99 V (Typical)
100% DC and RF tested
1.3 Applications
 Ku Band VSAT
 Point to Point Radio
1.4 Package Profile & RoHS Compliance
10-lead Flange Package
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ASX1437
2. Summary on Product Performances
2.1 Typical Performance
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 
Parameters
Test Conditions
Gate Bias Voltage
Min
Typ
Max
Units
f = 13.5 - 14.5 GHz
-0.99
V
f = 13.5 - 14.5 GHz
37
dBm
Small signal gain
f = 13.5 - 14.5 GHz
21
dB
Input Return Loss
f = 13.5 - 14.5 GHz
-9
dB
Output Return Loss
f = 13.5 - 14.5 GHz
-9
dB
Supply Current
VDD = +7 V
1300
mA
Output Power at
Psat1)
1) Psat: Saturated output power
2.2 Product Specification
Test conditions : T = +25 C, VDD= +7 V, CW, VGG = -0.99 V typical, ZO = 50 
Parameter
Min
Typ
Max
Frequency
13.5
14.5
Unit
GHz
Small Signal Gain
21
dB
Input Return Loss
-9
dB
Output Return Loss
-9
dB
Supply Current
1300
mA
2.3 Absolute Maximum Ratings
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Parameters
Max. Ratings
Operating Case Temperature (Tc)
-40 to 85 C
Storage Temperature (Tstg)
-55 to 125 C
Drain Voltage (VDD)
+9 V
Gate Voltage (VGG)
-1.5 to -0.5 V
Input RF Power (Pin)
23dBm
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2.4 Pin Descriptions
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Pin
Pin Name
Description
1,5
Vg
Gate voltage
3
RF IN
Input, matched to 50 ohms
6,10
Vd
Drain voltage
8
RF OUT
2,4,7,9
NC
Output, matched to 50 ohms
No internal connection ( open
or connected to GND )
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3. Application: 13.5 – 14.5 GHz
3.1 Application Circuit
Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to
prevent video oscillations which could damage the module.
3.2 Biasing Procedure
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
Make sure no RF power is applied to the device before continuing.

Pinch off device by setting VGG to -1.5 V.

Raise VDD to +7 V while monitoring drain current.

Raise VGG until drain current reaches 1.3 A. VGG should be between -1.5 and -0.5 V.

Apply RF power.

To improve the thermal and RF performance, ASB recommends a heat sinker attached to the
bottom of the package with an Indium alloy preform.
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3.3 Performance Table
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 
Parameters
Test Conditions
Min
Typ
Max
Units
Gate Bias Voltage
f = 13.5 - 14.5 GHz
-0.99
V
Output Power at Psat1)
f = 13.5 - 14.5 GHz
37
dBm
Small signal gain
f = 13.5 - 14.5 GHz
21
dB
Input Return Loss
f = 13.5 - 14.5 GHz
-9
dB
Output Return Loss
f = 13.5 - 14.5 GHz
-9
dB
Supply Current
VDD = +7 V
1300
mA
1) Psat: Saturated output power
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3.4 Plots of Performances
S-parameter
Input / Output Return Loss vs. Frequency
Input / Output Return Loss (dB)
VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm
0
-5
-10
-15
Input Return Loss
-20
Output Return Loss
-25
13
13.5
14
14.5
Frequency (GHz)
15
Small Signal Gain vs. Frequency
VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm
Small Signal Gain (dB)
32
28
24
20
16
12
8
4
0
13
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13.5
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14.5
Frequency (GHz)
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ASX1437
Input Return Loss vs. Frequency
VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm
Input Return Loss (dB)
0
-5
-10
-15
-20
-25
13
13.5
14
14.5
Frequency (GHz)
15
Output Return Loss vs. Frequency
VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm
Output Return Loss (dB)
0
-5
-10
-15
-20
-25
13
7/13
13.5
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14.5
Frequency (GHz)
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ASX1437
Output Return Loss vs. Frequency
VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm
Small Signal Gain (dB)
32
28
24
20
16
12
8
4
0
13
8/13
13.5
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14.5
Frequency (GHz)
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Output Power vs. Frequency
Output Power, IDD, Gain vs. Input Power
VDD = +7 V, IDD = 1300 mA
VDD = +7 V, IDD = 1300 mA
40
35
Output Power (dBm)
30
Output Power (dBm), Gain (dB)
Pin = +18 dBm
Pin = +16 dBm
Pin = +14 dBm
Pin = +12 dBm
Pin = +10 dBm
Pin = +8 dBm
Pin = +6 dBm
25
Pin = 0 dBm
20
Pin = -5 dBm
15
Pin = -10 dBm
10
Pin = -15 dBm
5
0
13.5
14
Frequency (GHz)
3100
3000
2900
2800
2700
2600
2500
2400
2300
2200
2100
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
-20
15
-15
-10
-5
0
5
10
Input Power (dBm)
15
20
Power Added Efficiency vs. Frequency
IMD3 vs. Output Power / Tone
VDD = +7 V, IDD = 1300 mA
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
25
-10
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
Pin = +18 dBm
Pin = +16 dBm
-15
Pin = +14 dBm
-25
-20
-30
Pin = +12 dBm
Pin = +10 dBm
-35
-40
-45
Pin = +8 dBm
-50
Pin = +6 dBm
-55
Pin = 0 dBm
-60
-65
-70
13
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14.5
IMD3 (dBc)
Power Added Efficiency (%)
13
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
IDD (mA)
ASX1437
13.5
14
Frequency (GHz)
14.5
12
15
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14
16
18
20 22 24 26 28
Output Power / Tone (dBm)
30
32
34
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ASX1437
Output Power, Drain Current, Gain vs. Input Power
-20
-15
-10
-5
0
5
10
Input Power (dBm)
15
20
25
Output Power (dBm), Gain (dB)
3100
3000
2900
2800
2700
2600
2500
2400
2300
2200
2100
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
IDD (mA)
Output Power (dBm), Gain (dB)
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
3100
3000
2900
2800
2700
2600
2500
2400
2300
2200
2100
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
-20
-15
-10
-5
0
5
10
Input Power (dBm)
15
20
IDD (mA)
VDD = +7 V, IDD = 1300 mA @ 14.0 GHz
VDD = +7 V, IDD = 1300 mA @ 13.5 GHz
25
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
3100
3000
2900
2800
2700
2600
2500
2400
2300
2200
2100
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
-20
10/13
-15
-10
-5
0
5
10
Input Power (dBm)
15
20
IDD (mA)
Output Power (dBm), Gain (dB)
VDD = +7 V, IDD = 1300 mA @ 14.5 GHz
25
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ASX1437
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
@ 13.5 GHz
@ 14.0 GHz
-10
-10
-15
-15
-20
-20
-25
-25
-30
-30
IMD3 (dBc)
IMD3 (dBc)
IMD3 vs. Output Power / Tone by Temperature
-35
-40
-45
-35
-40
-45
-50
-50
-55
-55
-60
-60
-65
-65
-70
-70
12
14
16
18
20 22 24 26 28
Output Power / Tone (dBm)
30
32
34
30
32
34
12
14
16
18
20 22 24 26 28
Output Power / Tone (dBm)
30
32
34
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
@ 14.5 GHz
-10
-15
-20
-25
IMD3 (dBc)
-30
-35
-40
-45
-50
-55
-60
-65
-70
12
11/13
14
16
18
20 22 24 26 28
Output Power / Tone (dBm)
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4. Mounting Instructions for Flange Package
4.1 Screw Mounting
4.1.1 The flange of package should be attached using screws. Torque conditions are shown in table 1.
Table 1. Recommended and Maximum Torque for Screw Mounting
Package
Recommended
Screw
Recommended
Torque
Maximum Torque
Flange
M2.0
10 N-cm (0.9 lb-in)
15 N-cm (1.3 lb-in)
4.1.2 First, tighten the screws with a torque driver set to 5 N-cm
4.1.3 The surface finish of the heat sinker should be better than 0.8 µm and the surface flatness must
be better than 10 µm.
4.1.4 Silicon based heat sink compounds should not be used for the thermal conductive grease. It
causes the poor grounding of the source flange, contamination, and long term degradation of
thermal resistance between the package and heat sinker.
4.2. Solder Mounting
4.2.1 Recommended solder is lead-free solder (Sn-3.0Ag-0.5Cu) or equivalent.
4.2.2 After soldering, the flux residue should be removed by appropriate cleaning methods.
4.2.3 The recommended soldering conditions are as follows:
Partial heating method: Soldering iron, spot laser/air
Product terminal temperature: 260°C, max. 10 sec/terminal or 400°C, max. 3 sec/terminal
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ASX1437
5. Package Outline
Units: mm [in]
*Please note the 1.51 mm of the height of the lead from the bottom of the metal base when it is to be mounted.
(End of Datasheet)
Copyright 2016-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB
assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet
may be copied or reproduced in any form or by any means without the prior written consent of ASB.
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