CJ3134KDW SOT-363 Plastic-Encapsulate MOSFETS CJ3134KDW Dual N-Channel MOSFET SOT-363 FEATURE Lead Free Product is Acquired Surface Mount Package N-Channel Switch with Low RDS(on) Operated at Low Logic Level Gate Drive Equivalent to Two CJ3134K APPLICATION Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portable Electronics Logic Level Shift MARKING: 34K ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-source voltage VDS 20 V Gate-source voltage VGS ±12 V Continuous drain current (t ≤10s) ID 0.75 A Power dissipation* PD 0.15 W RθJA 833 ℃/W Junction temperature TJ 150 ℃ Storage temperature Tstg -55~ +150 ℃ Thermal resistance from junction to ambient * Repetitive rating : Pulse width limited by junction temperature. [email protected] www.zpsemi.com 1 of 3 CJ3134KDW ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage (note 1) Drain-source on-resistance (note 1) RDS(on) 20 V 1 µA ±50 µA 1 V VGS =4.5V, ID =0.65A 380 mΩ VGS =2.5V, ID =0.55A 450 mΩ VGS =1.8V, ID =0.45A 800 mΩ Forward tranconductance (note 1) gFS VDS =10V, ID =0.8A Diode forward voltage(note 1) VSD IS=0.15A, VGS = 0V 0.35 1.6 S 1.2 V 79 120 pF 13 20 pF 15 pF DYNAMIC PARAMETERS (note 2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 9 td(on) 6.7 ns VDS =16V,VGS =0V,f =1MHz SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time tr VGS=4.5V,VDS=10V, 4.8 ns td(off) ID=0.5A,RGEN=10Ω 17.3 ns tf 7.4 ns Total Gate Charge Qg 20 nC Gate-Source Charge Qgs 1 nC Gate-Drain Charge Qgd 4 nC Turn-off delay time Turn-off fall time VDS =10V,VGS =4.5V,ID =7A Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. [email protected] www.zpsemi.com 2 of 3 CJ3134KDW Transfer Characteristics Output Characteristics 4 Pulsed 2.0 VDS=5.0V VGS=10.0V、4.5V、3.5V Pulsed 1.6 3 (A) ID Ta=100℃ 1.2 DRAIN CURRENT DRAIN CURRENT Ta=25℃ ID (A) VGS=2.5V 2 VGS=1.5V 1 0.8 0.4 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS 0.0 0.0 4 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 800 1.0 —— VGS VGS Ta=25℃ Ta=25℃ Pulsed 700 (mΩ) 0.8 RDS(ON) VGS=1.8V 0.6 ON-RESISTANCE ON-RESISTANCE RDS(ON) (Ω) Pulsed 0.4 2.5 (V) VGS=2.5V 600 500 400 ID=0.65A 300 0.2 VGS=4.5V 0.0 0.3 200 100 0.6 0.9 1.2 DRAIN CURRENT 1.5 ID 1.8 2.1 1 (A) IS —— VSD 10 2 3 4 GATE TO SOURCE VOLTAGE VGS 5 (V) Threshold Voltage 0.8 Ta=25℃ Pulsed 0.7 VTH 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 0.01 1E-3 1E-4 0.0 0.4 0.8 1.2 1.6 SOURCE TO DRAIN VOLTAGE [email protected] 2.0 2.4 ID=250uA 0.6 0.5 0.4 0.3 25 VSD (V) 50 75 JUNCTION TEMPERATURE www.zpsemi.com 100 TJ 125 (℃ ) 3 of 3