, One, J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. C158-C159 SCR1200Volts TELEPHONE: (973) 376-2922 i l l A T™*O (212)227-6005 110A RMS FAX: (973) 376-8960 MAXIMUM ALLOWABLE RATINGS Repetitive Peak Off-State Voltage, Type* Repetitive Peak Reverse Voltage, V (l) V RHM VDUM T0 = -40°Cto +125°C T(, = -40°C to + 125°C C158E, C159E C158M, C159M C158S, C159S C158N, C159N C158T, C159T C158P, C159P C158PA, C159PA C158PB, C159PB 500 Volts 600 700 800 900 1000 1100 1200 500 Volts 600 700 800 900 1000 1100 1200 Non-repetitive Peak Reverse Voltage, VUSM'" Tc = + 125°C 600 Volts 720 840 960 1080 1200 1300 1400 (1) Half tine wave voltage pulte, 10 millisecond maximum duration. RMS On-State Current, I T <UMS> Average On-State Current, I T ( A V , Peak One Cycle Surge (non-rep) On-State Current, ITSM Pt (for fusing) for times g: 1.5 milliseconds Ft (for fusing) for times g 8.3 milliseconds Critical Rate-of-Rise of On-State Current, di/dt, During Turn-On Interval Long Term DI/DT (refer to fig. 18, note 4) Peak Gate Power Dissipation, P G M . . , (Pulse Width = 10/tsec) Average Gate Power Dissipation, PGIAVI Peak Negative Gate Voltage, VGM Storage Temperature, TSTG Operating Temperature, Tj Stud Torque HO Amperes (see Charts) 1600 Amperes 5200 Ampere 2 seconds 10,500 Ampere 2 seconds 800 Amperes per microsecondf 500 A/> sec* 400 Watts 2 Watts 20 Volts -40°C to + 125°C -40°C to +125°C 150 Lb-in (Max), 125 Lb-in (Min) 175 Kg-cm (Max), 150 Kg-cm (Min) tRequired trigger source — 20 volts, 20 ohms; maximum switching voltage — 1200 volts; short-circuit gate supply current risetime -O.Sjj sac (This short-circuit current may be measured with a TEKTRONICS current probe.). dl/dt rating ii *i»abli>hed in accordance with EIA-NEMA Suggested Standard RS-397 Section 5.1.2.4. Immediate/ after each current pulte, off-itore (blecking) voltage capability may be temporarily lo»t for duration* leu than the period of the applied pulie repetition rate. The pulu repttitien rate for thil te»t U 400 Hi: The duration of the di/dt telt condition it 5.0 tecondt (minimum). This rating established by long term life tests on similar devices. CHARACTERISTICS TEST Peak Reverse and Off-State Current C158E, C159E C158M, C159M C158S, C159S C1B8N, C159N C158T, C1B9T C168P, C159P C158PA, C169PA C158PB, C159PB SYMBOL MIN. TYP. MAX. and IIIKK UNITS mA IDKU — — — — — 3 3 3 3 3 3 3 3 10 10 10 10 9 7 7 7 TEST CONDITION TV = +25°C VDNII = VHK« = 500 Volts peak 600 Volts peak 700 Volts peak 800 Volts peak 900 Volts peak 1000 Volts peak 1100 Volts peak 1200 Volts peak CHARACTERISTICS TEST SYMBOL Peak Reverse and Off-State Current C158E, C159E C1B8M, C159M C158S.C159S C1B8K, C159N C1B8T, C159T C158P, C159P C158PA, C159PA C1B8PB, C159PB Effective Thermal Resistance Critical Exponential Rate of Rise of Forward Blocking Voltage (Higher values may cause device switching) lolding Current IDRM MIN. and IHRM — R OJC dv/dt — 200 TYP. 12 12 12 12 12 12 12 12 .2 MAX. mA Tc = 125°C •c/ V,,KM = VBBM = 500 Volts peak 600 Volts peak 700 Volts peak 800 Volts peak 900 Volts peak 1000 Volts peak 1100 Volts Beak 1200 Voltsjpeak Junction to case (DC) 15 15 15 15 15 15 17 18 .3 500 watt V/Mse 100 mAdc IH IuT DC Gate Trigger Voltage V«t Peak On-State Voltage VTM — — 0.15 — " 80 150 30 3 1.25 150 300 125 5 3.0 2.8 3.5 mAdc mAdc mAdc Vdc Vdc Vdc Volts 2 ~ jisec Turn-On Time (Delay Time -f Rise Time) t,;T Delay Time tu 0,5 t,, 20 30 jisec 25 40 fisec tu (i|i llt lr> 40 —t Msec tl| ( p u U « ) 25 tit ( | i u l l « > 40 Conventional Circuit Commutated Turn-off-Time (with Feedback Diode) Pulse Circuit Commutated Turn-Off-Time (with Reverse Voltage) Pulse Circuit Commutated Turn-Off-Time (with Feedback Diode) VI.BM, Tc = + 125°C, Gate open. » DC Gate Trigger Current Conventional Circuit Commutated Turn-Qff-Time (with Reverse Voltage) TEH CONDITION UNITS (tlludt) Msec lisec _1.l. __A jisec Tc = +25°C, Anode supply = 24Vdc. Initial forward current = 2 amps. T,. = +25°C, Vn = 6Vdc, Ri. = 3 ohms. T,- = -40°C, V n = 6Vdc, Ri, = 3 ohms. T,- = + 125°C, Vn = 6 Vdc, Ri, = 3 ohms. Tr = -40°C to 0°C, Vn = 6 Vdc, R,, = 3 ohms, T<- = 0°C to +125°C, V,, = 6 Vdc, R T . = 3 ohm». Tr = 125°C, Vn»«, R,. = 1000 ohms. Tr = +25°C, ITM = 500A peak. Duty cycle £j .01%. T,- = +25°C, IT = 50 Adc, V™*. Gate supply: 10 volt open circuit, 20 ohm, 0.1 psec max. rise time, ttt Tr = + 25°C, IT = 50 Adc, Vmm, Gate supply: 10 volt open circuit, 20 ohm, 1.0 jtsec max. rise time, ft, ttt (1) To = +125°C, (2) IT = 150A. (3) VK = 50 volts min., (4) VI.KM (reapplied), (5) Rate of rise of reapplied forward blocking voltage = 20 V/^sec (linear). (6) Commutation di/dt = 5 Amps/^sec. (7) Repetition rate = 1 pps. (8) Gate bias during turn-oft" interval = 0 volts, 100 ohms. (1) Tc = +125°C, (2) IT = 150A, (3) V» = 50 volts min., (4) VBHM (reapplied), (5) Rate of rise of reapplied forward blocking voltage = 200 V/jusec (linear). (6) Commutation di/dt = 5 Amps/^sec. (7) Repetition rate = 1 pps. (8) Gate bias during turn-off interval = 0 volts, 100 ohms. (1) To = +125°C, (2) IT = 150A, (3) V» = 1 volt (Forward drop of GE A96 rectifier diode at I T = 150A) , (4) V,,x«, (5) Rate of rise of reapplied forward blocking voltage = 200 V/^sec (linear) . (6) Commutation di/dt = 5 Amps/Msec. (7) Repetition rate — 1 pps. (8) Gate bias during turn-off interval = 0 volts, 100 ohms. (1) Tc= -fl25°C, Vn*M (reapplied), (2) Rate of rise of reapplied forward blocking voltage = 200 V/MSCC (linear), (3) Rep. rate = 400 Hz., (4) Gate supply = 20 volts, 80 ohms, 1.0 M»«C max, rise time. (5) IT = 500 A peak, tp = 3 /usec (half sine wave) , (6) VK = 50 volts min. (1) Tc = +125°C, VHKM (reapplied), (2) Rate of rise of reapplied forward blocking voltage = 200 V/^sec (linear), (3) Rep, Rate = 400 Hz.. (4) Gate supply = 20 volts, 80 ohms, 1.0 M»ec max. rise time, (5) IT — 500 A peak, tp = 3 ^sec (half sine wave) , (6) V» = 1 voltfForward drop of GE A96 rectifier diode at IT = 150A). ttCMoy Tlmt may Incnat* ilgniflcanlly a« th« gat* driv* appraachtt th* I,:T of th* D*vlc* Und.r T*it (D.U.T.). tttCurrtnt rlutim* at nwaiurcd with a currmt probe, or vorlogi riitrlmo acro» a non-lnductiv* r*tiit«r. Quality Semi-Conductors