AUIRL7732S2TR
AUTOMOTIVE GRADE
Logic Level
Advanced Process Technology
Optimized for Automotive DC-DC, Motor Drive and other Heavy
Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg (typical)
S
D
SC
M2
G
S
D
DirectFET® ISOMETRIC
SC
Applicable DirectFET® Outline and Substrate Outline
SB
40V
5.0m
6.6m
58A
22nC
M4
L4
L6
L8
Description
The AUIRL7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only
0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRL7732S2 to offer substantial system level savings and performance improvement
specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7732S2 can be utilized
together with the AUIRL7736M2 as a control/sync MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques
to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
AUIRL7732S2
Package Type
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
AUIRL7732S2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
40
±16
58
41
14
230
41
2.2
46
124
See Fig. 16, 17, 18a, 18b
260
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRL7732S2TR
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Can
RJ-Can
Junction-to-PCB Mounted
RJ-PCB
Linear Derating Factor
Typ.
–––
12.5
20
–––
1.0
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
––– 0.03 ––– V/°C
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
5.0
6.6
Static Drain-to-Source On-Resistance
RDS(on)
m
–––
7.5
10.5
VGS(th)
Gate Threshold Voltage
1.0
1.8
2.5
V
Gate Threshold Voltage Coefficient
––– -7.1
––– mV/°C
VGS(th)/TJ
gfs
Forward Transconductance
64
–––
–––
S
RG
Internal Gate Resistance
––– 0.64 –––
–––
–––
5.0
IDSS
Drain-to-Source Leakage Current
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
22
33
Qgs1
Gate-to-Source Charge
–––
3.3
–––
Qgs2
Gate-to-Source Charge
–––
2.8
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
13
–––
Qgodr
Gate Charge Overdrive
–––
2.9
–––
Qsw
Switch Charge (Qgs2 + Qgd)
––– 15.8 –––
Qoss
Output Charge
–––
13
–––
nC
td(on)
Turn-On Delay Time
–––
21
–––
tr
Rise Time
–––
123
–––
ns
td(off)
Turn-Off Delay Time
–––
22
–––
tf
Fall Time
–––
37
–––
Ciss
Input Capacitance
––– 2020 –––
Coss
Output Capacitance
–––
410
–––
Crss
Reverse Transfer Capacitance
–––
210
–––
pF
Coss
Output Capacitance
––– 1460 –––
Coss
Output Capacitance
–––
365
–––
Coss
Output Capacitance
–––
630
–––
Max.
67
–––
–––
3.7
–––
0.27
Units
°C/W
W/°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 29A
VDS = VGS, ID = 50µA
VDS = 10V, ID = 35A
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
Conditions
VDS = 20V
VGS = 4.5V
ID = 35A
See Fig. 11
VDS = 16V, VGS = 0V
VDD = 20V
ID = 35A
RG = 6.8
VGS = 4.5V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz
VGS = 0V, VDS = 32V, ƒ = 1.0 MHz
VGS = 0V, VDS = 0 to 32V
Notes through are on page 3
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AUIRL7732S2TR
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Surface mounted on 1 in.
square Cu board (still air).
Min.
Typ.
Max. Units
–––
–––
58
–––
–––
230
–––
–––
–––
–––
23
16
1.3
35
24
D
A
Mounted to a PCB with
small clip heatsink (still air)
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 35A, VGS = 0V
TJ = 25°C, IF = 35A, VDD = 20V
dv/dt = 100A/µs
G
S
V
ns
nC
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.075mH, RG = 50, IAS = 35A.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large heat sink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R is measured at TJ of approximately 90°C.
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AUIRL7732S2TR
1000
TOP
ID, Drain-to-Source Current (A)
Tj = 25°C
1000
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.8V
2.5V
100
BOTTOM
60µs PULSE WIDTH
Tj = 175°C
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
TOP
100
10
1
BOTTOM
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.8V
2.5V
10
2.5V
2.5V
0.1
0.1
1
10
100
1
1000
0.1
V DS, Drain-to-Source Voltage (V)
12
T J = 125°C
8
6
T J = 25°C
2
0
2
4
6
8
10
12
14
16
18
20
RDS(on), Drain-to -Source On Resistance ( m)
R DS(on) , Drain-to -Source On Resistance ( m)
ID = 35A
4
Vgs = 10V
14
12
T J = 125°C
10
8
6
T J = 25°C
4
2
0
0
20 40 60 80 100 120 140 160 180 200
ID , Drain Current (A)
Fig. 3 Typical On-Resistance vs. Gate Voltage
Fig. 4 Typical On-Resistance vs. Drain Current
1000
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1000
16
VGS, Gate -to -Source Voltage (V)
T J = -40°C
100
T J = 25°C
T J = 175°C
10
1
VDS = 25V
60µs PULSE WIDTH
0.1
1
2
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 5. Transfer Characteristics
4
100
Fig. 2 Typical Output Characteristics
16
10
10
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
14
1
6
ID = 35A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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AUIRL7732S2TR
1000
2.5
ISD, Reverse Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
3.0
2.0
ID = 50µA
1.5
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.0
100
TJ = -40°C
TJ = 25°C
T J = 175°C
10
VGS = 0V
1.0
0.5
-75 -50 -25
0
0.0
25 50 75 100 125 150 175
100000
0.6
0.8
1.0
1.2
1.4
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
T J = 25°C
80
Coss = Cds + Cgd
60
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
100
T J = 175°C
40
20
10000
C iss
C oss
1000
Crss
V DS = 5.0V
380µs PULSE WIDTH
100
0
0
20
40
60
80
1
100
10
100
VDS , Drain-to-Source Voltage (V)
ID ,Drain-to-Source Current (A)
Fig 9. Typical Forward Trans conductance vs. Drain Current
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
14.0
60
ID = 35A
12.0
50
VDS = 32V
VDS = 20V
VDS = 8.0V
10.0
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
0.4
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
8.0
6.0
4.0
2.0
40
30
20
10
0.0
0
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
0.2
VSD , Source-to-Drain Voltage (V)
T J , Temperature ( °C )
60
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2015-12-11
AUIRL7732S2TR
200
1000
100
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
1msec
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
ID
6.8A
18A
BOTTOM 35A
180
TOP
160
140
120
100
80
60
40
20
0
1
0
1
10
25
100
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
VDS , Drain-to-Source Voltage (V)
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
Thermal Response ( Z thJC ) °C/W
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
J
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
1
2
3
2
3
4
C
4
Ci= iRi
Ci= iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Ri (°C/W)
1.60955
i (sec)
0.006147
1.36375
0.029323
0.12482
2.09e-05
0.60108
0.000679
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs. Pulse Width
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AUIRL7732S2TR
EAR , Avalanche Energy (mJ)
30
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 35A
25
20
15
10
5
0
25
50
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
Starting T J , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
Fig 18a. Unclamped Inductive Test Circuit
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 18b. Unclamped Inductive Waveforms
VDD
Fig 19a. Gate Charge Test Circuit
Fig 20a. Switching Time Test Circuit
7
Fig 19b. Gate Charge Waveform
Fig 20b. Switching Time Waveforms
2015-12-11
AUIRL7732S2TR
DirectFET® Board Footprint, SC (Small Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® .
This includes all recommendations for stencil and substrate designs.
G=GATE
D=DRAIN
S=SOURCE
D
S
D
G
D
S
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRL7732S2TR
DirectFET® Outline Dimension, SC Outline (Small Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® . This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
M
P
R
METRIC
MIN MAX
4.75 4.85
3.70 3.95
2.75 2.85
0.35 0.45
0.58 0.62
0.78 0.82
0.75 0.80
0.63 0.67
0.38 0.42
0.95 1.05
2.15 2.25
0.68 0.74
0.08 0.17
0.02 0.08
IMPERIAL
MAX
MIN
0.187
0.191
0.146
0.156
0.112
0.108
0.018
0.014
0.024
0.023
0.032
0.031
0.030
0.031
0.025
0.026
0.015
0.016
0.041
0.037
0.088
0.085
0.027
0.029
0.003
0.007
0.001
0.003
DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRL7732S2TR
DirectFET® Tape & Reel Dimension (Showing component orientation)
F
E
A
B
C
D
G
H
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts, ordered as AUIRL7732S2TR.
REEL DIMENSIONS
STANDARD OPTION(QTY 4800)
IMPERIAL
METRIC
MIN
CODE
MAX
MIN
MAX
12.992 N.C
A
330.0
N.C
0.795
B
20.2
N.C
N.C
0.504
C
12.8
0.520
13.2
0.059
D
1.5
N.C
N.C
3.937
E
100.0
N.C
N.C
F
N.C
N.C
0.724
18.4
G
0.488
12.4
0.567
14.4
H
0.469
11.9
0.606
15.4
LOADED TAPE FEED DIRECTION
A
H
F
C
D
B
E
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
G
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
0.311
0.319
7.90
8.10
0.154
0.161
3.90
4.10
0.469
0.484
11.90
12.30
0.215
0.219
5.45
5.55
0.158
0.165
4.00
4.20
0.197
0.205
5.00
5.20
0.059
N.C
1.50
N.C
0.059
0.063
1.50
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRL7732S2TR
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
DFET2 Small Can
MSL1
Class M4 ( +/-425V)†
AEC-Q101-002
Class H1B (+/-1000V) †
AEC-Q101-001
N/A
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
12/11/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Updated Tape and Reel option on page 10
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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