Diodes DXT5616U 80v npn medium power transistor in to126 Datasheet

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Diodes Incorporated
Green
DXT5616U
80V NPN MEDIUM POWER TRANSISTOR IN TO126
Features
Mechanical Data




BVCEO > 80V
IC = 1A Continuous Collector Current
ICM = 2A Peak Pulse Current
Low Saturation Voltage VCE(sat) < 500mV @ 0.5A


Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)
Case: TO126

Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208

Weight: TO126: 400mg (Approximate)
Applications


TO126
Medium Power Switching or Amplification Applications
AF driver and output stages
C
B
E
Top View
Equivalent Circuit
Front Face View
Pin-Out
Ordering Information (Note 4)
Notes:
Product
Package
Marking
DXT5616U
TO126
XT5616
Quantity
1,690 per box in tubes
(65 per tube)
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
XT5616 = Product type marking code
Date Code Format = YYWW
YY = Last two digits of Year(ex 14=2014)
WW = Week (01-53)
8D = Assembly and Foundry code
DXT5616U
Datasheet Number: DS37030 Rev. 1 – 2
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DXT5616U
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Value
100
80
5
1
2
100
200
Unit
V
V
V
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6) TL = +25°C
(Note 5)
(Note 6)
Value
1.3
20
96
6.25
-65 to +150
PD
RθJA
RθJL
TJ, TSTG
Unit
W
°C/W
°C/W
°C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a through-hole device mounted on minimum recommended pad layout with 10mm lead length from the bottom of package to the board
that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DXT5616U
Datasheet Number: DS37030 Rev. 1 – 2
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DXT5616U
Thermal Characteristics and Derating Information
IC Collector Current (A)
1
Limited
DC
1s
100ms
100m
10ms
1ms
Single Pulse
T amb=25°C
10m
100m
100µs
1
10
VCE Collector-Emitter Voltage (V)
100
Max Power Dissipation (W)
1.4
VCE(sat)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
Maximum Power (W)
Thermal Resistance (°C/W)
D=0.1
Single Pulse
Pulse Width (s)
Datasheet Number: DS37030 Rev. 1 – 2
100 120 140 160
10
100
1k
Single Pulse
T amb=25°C
100
10
1
100µ
Transient Thermal Impedance
DXT5616U
80
Derating Curve
D=0.05
1
60
Temperature (°C)
Safe Operating Area
100
Tamb=25°C
90
80
70
60
D=0.5
50
40
30
D=0.2
20
10
0
100µ 1m 10m 100m
40
1m
10m 100m
1
10
Pulse Width (s)
100
1k
Pulse Power Dissipation
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DXT5616U
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVCBO
100
—
—
V
IC = 100µA
BVCEO
80
—
—
V
IC = 10mA
BVEBO
7
—
V
Collector Cut-off Current
ICBO
—
—
Emitter Cut-off Current
IEBO
—
—
—
—
—
—
IE = 100µA
VCB = 80V
VCB = 80V, TA = +150°C
VEB = 6V
IC = 5mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 500mA, VCE = 2V
VCE(sat)
VBE(on)
—
25
100
25
—
—
—
0.1
20
20
fT
150
Cobo
td
tr
ts
tf
—
—
—
—
—
Static Forward Current Transfer Ratio (Note 6)
hFE
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
Transition Frequency
Output Capacitance
Delay Time
Rise Time
Storage Time with Resistive Load
Fall Time with Resistive Load
Notes:
µA
nA
—
250
—
0.5
1.0
V
V
—
—
MHz
—
21
33
708
95
25
—
—
—
—
pF
ns
Test Condition
IC = 500mA, IB = 50mA
IC = 500mA, VCE = 2V
IC = 50mA, VCE = 10V
f = 100MHz
VCB = 10V, f = 1MHz
IC = 400mA, VCC = 40V,
IB1 = 20mA, IB2 = -20mA
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
250
200
0.6
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
0.8
0.4
0.2
150
100
50
0
0
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
DXT5616U
Datasheet Number: DS37030 Rev. 1 – 2
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0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
March 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DXT5616U
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
0.4
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
0.8
0.6
0.4
0.2
0.1
0
0.0001
0
0.0001
0.01
0.1
1
10
0.001
IC, COLLECTOR CURRENT (A)
Fig. 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
140
1.0
120
0.8
CAPACITANCE (pF)
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
0.2
0.3
0.6
0.4
0.2
100
80
60
40
20
0
0.0001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 6 Typical Capacitance Characteristics
fT, GAIN-BANDWIDTH PRODUCT (MHz)
300
250
200
150
100
VCE = 5V
f = 100MHz
50
0
0
20
40
60
80
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product
vs. Collector Current
DXT5616U
Datasheet Number: DS37030 Rev. 1 – 2
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DXT5616U
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
2
A
D
TO126
h
Y
E
1
b
ø
1
L
b
L
Dim
A
A2
b
b1
c
D
E
e
e1
Min
2.400
1.060
0.660
1.170
0.400
7.400
10.60
-
Max
Typ
2.900
1.500
0.860
1.470
0.600
8.200
11.20
2.280
4.560
h
0.00
0.30
-
L
14.50
15.90
-
L1
1.700 2.100
Y
3.600 3.900
ø
3.100 3.550
All Dimensions in mm
c
e
1
e
DXT5616U
Datasheet Number: DS37030 Rev. 1 – 2
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DXT5616U
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
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DXT5616U
Datasheet Number: DS37030 Rev. 1 – 2
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March 2014
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