DMN6140L 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Mechanical Data RDS(on) max ID TA = +25°C 140m @ VGS = 10V 2.3A 170m @ VGS = 4.5V 2.1A V(BR)DSS 60V making it ideal for high efficiency power management applications. Applications DC-DC Converters Power Management Functions Analog Switch Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.0072 grams (Approximate) D SOT23 D G S G S Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN6140L-7 DMN6140L-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N61 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN6140L Document number: DS35621 Rev. 4 - 2 Mar 3 YM NEW PRODUCT Features and Benefits N61 = Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D December 2014 © Diodes Incorporated DMN6140L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current (Note 5) VGS = 10V Steady State t<10s Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C 2.0 1.6 A ID 2.3 1.8 A Units V V A 2.9 2.3 1.5 10 IS IDM A A A (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Value 0.7 0.4 183 115 1.3 0.8 94 61 39 -55 to +150 PD RJA PD RJA Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics ID ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Thermal Characteristics ID Value 60 20 1.6 1.2 RJC TJ, TSTG Units W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) 1 RDS(ON) — |Yfs| VSD — — 3 140 170 — 1.0 V Static Drain-Source On-Resistance — 92 115 2.2 0.75 VDS = VGS, ID = 250µA VGS = 10V, ID = 1.8A VGS = 4.5V, ID = 1.3A VDS = 15V, ID = 1.8A VGS = 0V, IS = 0.45A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 315 18 16 0.65 8.6 4.1 1.0 1.7 2.6 3.6 16.3 2.7 16.8 9.0 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistnace Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V Test Condition pF VDS = 40V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 30V, ID = 1.8A ns VDS = 30V, VGS = 10V, RG = 6.0ΩID = 1.8A ns nC IF = 1.8A, di/dt =100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1in. square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN6140L Document number: DS35621 Rev. 4 - 2 2 of 6 www.diodes.com December 2014 © Diodes Incorporated DMN6140L 10.0 8 VDS = 5.0V 8.0 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 10V VGS = 4.0V 7.0 VGS = 3.5V 6.0 5.0 4.0 VGS = 3.0V 3.0 6 4 2 TA = 150°C 2.0 1.0 TA = 125°C VGS = 2.5V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 5 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.18 0.16 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.5 0.2 ID = 1.8A 0.4 0.14 VGS = 4.5V 0.12 0.3 0.1 VGS = 10V 0.08 0.2 0.06 0.04 ID = 1.3A 0.1 0.02 0 1 2 3 4 5 6 7 ID , DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 8 0.4 0 2 3 4 5 6 7 8 9 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On Resistance vs. Gate-Source Voltage 2.2 VGS = 4.5V 2 0.36 0.32 0.28 T A = 150°C 0.24 0.2 T A = 125°C TA = 85°C 0.16 TA = 25°C 0.12 0.08 TA = -55°C VGS = 10V ID =5.0A 1.8 1.6 1.4 VGS = 4.5V ID = 2.5A 1.2 1 0.8 0.6 0.4 0.2 0.04 0 TA = 85°C TA = 25°C TA = -55°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT 9.0 0 1 2 3 4 5 6 7 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN6140L Document number: DS35621 Rev. 4 - 2 8 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature December 2014 © Diodes Incorporated DMN6140L 3 V GS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.3 0.24 VGS = 4.5V ID = 2.5A VGS = 10V ID = 5.0A 0.12 0.06 2.4 2.1 1.8 ID = 1mA 1.5 0.9 0.6 0.3 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature -50 8 7 6 5 25 50 75 100 125 150 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 Ciss 100 TA = 25°C 4 3 2 Coss 1 Crss f=1MHz 0 10 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 100 10 VDS = 30V ID = 1.8A RDS(on) Limited 8 PW = 10µs ID, DRAIN CURRENT (A) 10 6 4 1 PW = 10s PW = 1s PW = 100ms 0.1 2 0 0 CT, JUNCTION CAPACITANCE (pF) 9 0 -25 1000 10 IS, SOURCE CURRENT (A) ID = 250µA 1.2 0 VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT 0.18 2.7 PW = 10ms PW = 1ms TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1*MRP board 0.01 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN6140L Document number: DS35621 Rev. 4 - 2 10 PW = 100µs 0.001 4 of 6 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 December 2014 © Diodes Incorporated DMN6140L NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 169°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7° H K1 J K SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 8° All Dimensions in mm GAUGE PLANE 0.25 a M A L1 L C B D F G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMN6140L Document number: DS35621 Rev. 4 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com December 2014 © Diodes Incorporated DMN6140L IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DMN6140L Document number: DS35621 Rev. 4 - 2 6 of 6 www.diodes.com December 2014 © Diodes Incorporated