ACE5213A P-Channel Enhancement Mode MOSFET Description The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features • • • P-Channel -20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability Application • • • Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Absolute Maximum Ratings Symbol Max Unit Parameter Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -0.45 -0.35 A Pulsed Drain Current IDM -1.0 A Continuous Source Current (Diode Conduction) IS -0.3 A Power Dissipation TA=25℃ TA=70℃ PD 0.27 0.16 W Operating Junction Temperature TJ -55/150 O C Storage Temperature Range TSTG -55/150 O C VER 1.1 1 ACE5213A P-Channel Enhancement Mode MOSFET Packaging Type SOT-523 3 SOT-523 Description 1 1 Gate 2 Source 3 Drain 2 Ordering information ACE5213A KM + H Halogen - free Pb - free KM : SOT-523 Electrical Characteristics Parameter TA=25℃, unless otherwise noted Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current V(BR)DSS VGS=0V, ID=-250uA -20 VGS(th) VDS=VGS, ID=-250uA -0.35 IGSS VDS=0V,VGS=±12V ±100 VDS=-20V, VGS=0V -1 VDS=-20V, VGS=0V TJ=55℃ -5 IDSS VDS≧-4.5V, VGS=-5V V -0.8 -0.7 0.42 0.52 VGS=-2.5V, ID=-0.35A 0.58 0.70 VGS=-1.8V, ID=-0.25A 0.75 0.95 Gfs VDS=-10V,ID=-0.25A 0.4 VSD IS=-0.15A, VGS=0V -0.8 -1.2 1.5 2.0 RDS(ON) Forward Transconductance Diode Forward Voltage uA A VGS=-4.5V, ID=-0.45A Drain-Source On-Resistance nA Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.35 td(on) 5 10 15 25 8 15 1.4 1.8 Turn-On Time Turn-Off Time tr td(off) tf VDS=-10V, VGS=-4.5V, ID=-0.6A VDD=-10V, RL=10Ω, VGEN=-4.5V, ID=-0.4A ,RG=6Ω 0.3 nC VER 1.1 nS 2 ACE5213A P-Channel Enhancement Mode MOSFET Typical Performance Characteristics Output Characteristics VDS-Drain-to-Source Voltage (V) On-Resistance vs. Drain Current ID-Drain Current (A) Gate Charge Qg-Total Gate Charge (nC) Transfer Characteristics VGS-Gate-to-Source Voltage (V) Capacitance VDS-Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature TJ-Junction Temperature (℃) VER 1.1 3 ACE5213A P-Channel Enhancement Mode MOSFET Typical Performance Characteristics Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD-Source-to-Drain Voltage (V) Threshold Voltage VGS-Gate-to-Source Voltage (V) Single Pulse Power TJ-Temperature(℃) Time (sec) Normalized Thermal Transient Impedance, Junction-to Foot Square Wave Pulse Duration (sec) VER 1.1 4 ACE5213A P-Channel Enhancement Mode MOSFET Packing Information SOT-523 VER 1.1 5 ACE5213A P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6