Diodes DMS3016SFG-13 N-channel enhancement mode mosfet Datasheet

DMS3016SFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
POWERDI®
Product Summary
V(BR)DSS
Features and Benefits
•
ID
RDS(on) max
TA = 25°C
13mΩ @ VGS = 10V
10.2A
16mΩ @ VGS = 4.5V
9.3A
30V
•
Description
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low RDS(ON) – minimize conduction losses
• Low VSD – reducing the losses due to body diode conduction
• Low Qrr – lower Qrr of the integrated Schottky reduces body diode
switching losses
• Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies
• Avalanche rugged – IAR and EAR rated
Small form factor thermally efficient package enables higher
density end products
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
•
•
•
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data
•
•
•
•
•
•
•
•
•
DC-DC Converters
Power management functions
Analog Switch
•
Case: POWERDI3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
Drain
POWERDI3333-8
Pin 1
S
S
8
7
6
5
S
G
Gate
D
D
D
D
Top View
2
3
4
Top View
Pin Configuration
1
Bottom View
Source
Internal Schematic
Ordering Information (Note 4)
Part Number
DMS3016SFG-7
DMS3016SFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
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October 2012
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DMS3016SFG
YYWW
Marking Information
S30 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 09 = 2009)
WW = Week code (01 ~ 53)
S30
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Value
30
±12
7.0
5.5
ID
6.4
5.1
A
ID
10.2
8.1
A
ID
Pulsed Drain Current (10us pulse, duty cycle=1%)
Avalanche Current (Note 7)
Repetitive Avalanche Energy (Note 7) L = 0.3mH
IDM
IAR
EAR
Units
V
V
A
9.3
7.4
80
13
24
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
°C/W
°C
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
1,000
100
RDS(ON)
Limited
ID(A) @PW =100µs
ID(A) @PW =1ms
P(PK), PEAK TRANSIENT POIWER (W)
Notes:
PD
Value
0.98
2.08
127
60
3.42
-55 to +150
ID, DRAIN CURRENT (A)
100
ID (A) @PW =10ms
10
ID(A) @ DC
ID(A) @PW =10s
1
ID(A) @PW =1s
ID(A) @PW =100ms
0.1
T J(MAX) = 150°C
T A = 25 °C
Single Pulse
0.01
0.01
ID(A) @
PW=10µs
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
100
90
80
Single Pulse
RθJA = 54° C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
70
60
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
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r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R θJA(t)=r(t) * R θJA
R θJA = 54°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
⎯
⎯
⎯
⎯
⎯
⎯
100
±100
µA
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
|Yfs|
VSD
IS
1.0
⎯
⎯
⎯
⎯
⎯
⎯
10
12
25
0.37
⎯
2.2
13
16
⎯
0.6
5
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1886
372
128
2.0
19.5
44.6
4.8
4.6
5.8
23.7
35.4
7.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
nA
V
mΩ
S
V
A
Test Condition
VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 11.2A
VGS = 4.5V, ID = 10.A
VDS = 5V, ID = 11.2A
VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 15V, VGS = 10V
ID = 11.2A
ns
VGS = 10V, VDD = 15V, RG = 3Ω,
RL = 1.2Ω
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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30
30
VGS = 150°C
VGS = 10V
25
20
VGS = 3.0V
15
VGS = 2.5V
10
VGS = 1.8V
0
0
0.016
0.014
VGS = 4.5V
0.01
VGS = 10V
0.006
0.004
0.002
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
10
VGS = 4.5V
ID = 5A
1.3
VGS = 10V
ID = 10A
1.1
0.9
0.7
VGS = 25°C
VGS = -55°C
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
4
0.022
VGS = 4.5V
0.02
T A = 150°C
0.018
T A = 125°C
0.016
TA = 85°C
0.014
T A = 25°C
0.012
0.01
TA = -55°C
0.008
0.006
0.004
0.002
0
30
1.7
1.5
VGS = 125°C
0.024
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.02
0.008
15
0
0
2
0.018
0.012
20
5
VGS = 2.0V
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristics
VDS = 5V
VGS = 85°C
VGS = 2.2V
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
30
0.02
0.018
VGS = 4.5V
ID = 5A
0.016
0.014
0.012
VGS = 10V
ID = 10A
0.01
0.008
0.006
0.004
0.002
0.5
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 On-Resistance Variation with Temperature
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DMS3016SFG
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30
25
1.5
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
2
ID = 100mA
1
15
10
5
0
0.2
0.5
-50
-25
0
25
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
10,000
TA = 150°C
C ISS
1,000
C OSS
CRSS
100
10
0
2
0.3 0.4 0.5
0.6 0.7
0.8
0.9 1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
10,000
f = 1MHz
IDSS, LEAKAGE CURRENT (µA)
C, CAPACITANCE (pF)
T A = 25°C
20
4
6
8
10
12
14
TA = 125°C
1,000
T A = 85°C
100
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Total Capacitance
10
TA = 25°C
1
0
10
20
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
VGS, GATE-SOURCE VOLTAGE (V)
10
8
VDS = 15V
ID = 11.2A
6
4
2
0
0
5
10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
50
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
POWERDI3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
A
A3
A1
D
D2
L
(4x)
1
Pin 1 ID
4
b2
(4x)
E
E2
8
Z (4x)
5
e
L1
(3x)
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
8
Y2
5
G1
Y1
Y
1
4
Y3
X2
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
C
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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Copyright © 2012, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
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October 2012
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