DMP3017SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® RDS(ON) max ID max TA = +25°C 10mΩ @ VGS = -10V -11.5A V(BR)DSS -30V Features and Benefits 18mΩ @ VGS = -4.5V Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products -8.7A Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data ideal for high efficiency power management applications. Case: POWERDI3333-8 Applications Backlighting Power Management Functions DC-DC Converters Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) S D ESD PROTECTED Top View D D D Pin 1 S S G D Bottom View G S Gate Protection Diode Equivalent Circuit Ordering Information (Note 4) Part Number DMP3017SFG-7 DMP3017SFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION Product Summary P17= Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 13 = 2013) WW = Week code (01 ~ 53) P17 POWERDI is a registered trademark of Diodes Incorporated DMP3017SFG Document number: DS36479 Rev. 3 - 2 1 of 7 www.diodes.com December 2013 © Diodes Incorporated DMP3017SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic ADVANCE INFORMATION Symbol Value Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 6) VGS = -10V Units Steady State TA = +25°C TA = +70°C ID -11.5 -9.4 A t<10s TA = +25°C TA = +70°C ID -15.2 -12.1 A IS -3.0 A IDM -80 A Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Notes 7) L = 1mH IAR 14 A Repetitive Avalanche Energy (Notes 7) L = 1mH EAR 104 mJ Value Units Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady State t < 10s TA = +25°C TA = +70°C Steady State t < 10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range PD RθJA PD 0.94 0.6 137 82 2.2 1.3 W °C/W °C/W W 60 36 °C/W °C/W RθJC 3.0 °C/W TJ, TSTG -55 to +150 °C RθJA POWERDI is a registered trademark of Diodes Incorporated DMP3017SFG Document number: DS36479 Rev. 3 - 2 2 of 7 www.diodes.com December 2013 © Diodes Incorporated DMP3017SFG Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1 μA VDS = -24V, VGS = 0V Gate-Source Leakage Unit Test Condition IGSS — — ±10 μA VGS = ±25V, VDS = 0V VGS(th) -1.0 — -3.0 V VDS = VGS, ID = -250μA — 8.5 10 — 15 18 |Yfs| — 24 — S Input Capacitance Ciss — 2246 — pF Output Capacitance Coss — 352 — pF Reverse Transfer Capacitance Crss — 294 — pF Gate resistance Rg — 5.1 12 Ω Total Gate Charge (VGS = 5V) Qg — 20.5 — nC Total Gate Charge (VGS = 10V) Qg — 41 — nC Gate-Source Charge Qgs — 7.6 — nC Gate-Drain Charge Qgd — 8.0 — nC Turn-On Delay Time tD(on) — 7.5 — ns Turn-On Rise Time tr — 15.4 — ns tD(off) — 45.6 — ns tf — 36.8 — ns ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance mΩ VGS = -10V, ID = -11.5A VGS = -4.5V, ID = -8.5A VDS = -5V, ID = -11.5A DYNAMIC CHARACTERISTICS (Note 9) Turn-Off Delay Time Turn-Off Fall Time VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = -15V, ID = -11.5A VDD = -15V, VGS = -10V, RG = 6Ω, ID = -11.5A BODY DIODE CHARACTERISTICS VSD — -0.7 — V Reverse Recovery Time (Note 9) trr — 20 — ns Reverse Recovery Charge (Note 9) Qrr — 9.5 — nC Diode Forward Voltage Notes: VGS = 0V, IS = -1A IS = -11.5A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 30.0 30 VDS = -5.0V VGS = -10V 25 25.0 20.0 -ID, DRAIN CURRENT (A) VGS = -5.5V -ID, DRAIN CURRENT (A) ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) VGS = -3.5V VGS = -5.5V VGS = -4.0V 15.0 10.0 VGS = -3.0V 5.0 20 15 TA = 150°C 10 T A = 85°C TA = 25°C 5 TA = 125°C 0.0 TA = -55°C VGS = -2.5V 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 POWERDI is a registered trademark of Diodes Incorporated DMP3017SFG Document number: DS36479 Rev. 3 - 2 3 of 7 www.diodes.com December 2013 © Diodes Incorporated 0.018 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.02 VGS = -4.5V 0.016 0.014 0.012 0.01 VGS = -10V 0.008 0.006 0.004 0.002 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(on), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 1.4 0.03 VGS = -4.5V 0.025 T A = 150°C 0.02 VGS = -5V ID = -5A 1.2 1.0 0.8 0.6 -50 TA = 125°C TA = 85°C 0.015 TA = 25°C 0.01 TA = -55°C 0.005 0 1 30 1.8 2 3 4 5 6 7 8 9 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.03 0.025 0.02 VGS = -5V ID = -5A 0.015 0.01 VGS = -10V ID = -10A 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature 30 3.0 2.8 25 2.6 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMP3017SFG 2.4 2.2 2.0 1.8 -I D = 1mA -I D = 250µA 1.6 1.4 20 T A= 25C 15 10 5 1.2 0 1.0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current POWERDI is a registered trademark of Diodes Incorporated DMP3017SFG Document number: DS36479 Rev. 3 - 2 4 of 7 www.diodes.com December 2013 © Diodes Incorporated DMP3017SFG 10 VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) Ciss 1000 Coss Crss f = 1MHz 100 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 8 7 6 5 4 3 2 1 0 30 VDS = -15V ID = -1.5A 9 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 45 100 RDS(on) Limited -ID, DRAIN CURRENT (A) 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = 150°C TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 1ms PW = 100µs 1 10 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 10000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 143°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 12 Transient Thermal Resistance 100 1,000 POWERDI is a registered trademark of Diodes Incorporated DMP3017SFG Document number: DS36479 Rev. 3 - 2 5 of 7 www.diodes.com December 2013 © Diodes Incorporated DMP3017SFG Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 L 0.35 0.45 0.40 L1 0.39 e 0.65 Z 0.515 All Dimensions in mm A3 A1 D D2 1 Pin 1 ID L (4x) 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G Y2 8 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated DMP3017SFG Document number: DS36479 Rev. 3 - 2 6 of 7 www.diodes.com December 2013 © Diodes Incorporated DMP3017SFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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