Central CSICD05-1200 Stable switching over temperature extreme Datasheet

CSICD05-1200
SURFACE MOUNT
SILICON CARBIDE
SCHOTTKY RECTIFIER
5.0 AMP, 1200 VOLT
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSICD05-1200
is a silicon carbide Schottky rectifier designed for high
frequency systems where energy efficiency and thermal
performance are critical design elements.
MARKING CODE: SICD0512
DPAK-2L Case
APPLICATIONS:
• Power inverters
• Motor drives
• Switch-mode power supplies
• Power factor correction
FEATURES:
• Low profile package
• Low switching loss
• Stable switching over temperature extremes
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Peak Reverse Surge Voltage
VRSM
1200
UNITS
V
1200
V
DC Blocking Voltage
VR
IO
1200
V
5.0
A
IF
5.0
A
IFSM
EAS
40
A
44
mJ
150
W
Average Rectified Forward Current (TC=142°C)
Continuous Forward Current (TC=142°C)
Peak Forward Surge Current, tp=8.3ms
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Power Dissipation (TC=142°C)
Operating and Storage Junction Temperature
Thermal Resistance
PD
PD
TJ, Tstg
42
W
-55 to +175
°C
ΘJC
1.6
°C/W
MAX
190
UNIT
μA
Note 1: L=10mH, IPK=2.9A, VDD=100V, Initial TJ=25°C
ELECTRICAL
SYMBOL
IR
IR
CHARACTERISTICS: (TJ=25°C unless otherwise noted)
TEST CONDITIONS
TYP
VR=1200V
30
VR=1200V, TJ=175°C
45
600
μA
VF
IF=5.0A
1.5
1.7
V
VF
2.3
3.0
QC
IF=5.0A, TJ=175°C
VR=600V, IF=5.0A, di/dt=250A/μs
14
nC
CJ
VR=1.0V, f=1.0MHz
240
pF
CJ
VR=300V, f=1.0MHz
26
pF
CJ
VR=600V, f=1.0MHz
19
pF
V
R1 (7-March 2017)
CSICD05-1200
SURFACE MOUNT
SILICON CARBIDE
SCHOTTKY RECTIFIER
5.0 AMP, 1200 VOLT
DPAK-2L CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Cathode
2) Anode
Tab) Cathode
MARKING CODE: SICD0512
R1 (7-March 2017)
w w w. c e n t r a l s e m i . c o m
CSICD05-1200
SURFACE MOUNT
SILICON CARBIDE
SCHOTTKY RECTIFIER
5.0 AMP, 1200 VOLT
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (7-March 2017)
w w w. c e n t r a l s e m i . c o m
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