POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF615 FINAL SPECIFICATION Repetitive voltage up to Mean on-state current Surge current Turn-off time 1200 1625 20 25 V A kA µs mag 06 - ISSUE : 05 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 1200 V V RSM Non-repetitive peak reverse voltage 125 1300 V V DRM Repetitive peak off-state voltage 125 1200 V I RRM Repetitive peak reverse current V=VRRM 125 100 mA I DRM Repetitive peak off-state current V=VDRM 125 100 mA 1625 A CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz,Th=55°C, double side cooled I T (AV) Mean on-state current 180° sin, 1 kHz,Th=55°C, double side cooled I TSM Surge on-state current, non repetitive sine wave, 10 ms I² t I² t without reverse voltage V T On-state voltage On-state current = 25 1,95 V T(TO) Threshold voltage 125 1,25 V T On-state slope resistance 125 0,200 mohm r 125 1575 A 20 kA 2000 x1E3 2000 A A²s V SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 1200 A, gate 10V 5 ohm 125 800 A/µs dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 75% of VDRM 125 600 V/µs td Gate controlled delay time, typical VD=200V, gate source 20V, 10 ohm , tr=.5 µs 25 0,85 µs tq Circuit commutated turn-off time 125 25 µs Q rr Reverse recovery charge 230 µC 140 A di/dt = dV/dt = 60 A/µs, I= 1000 I = 1000 A 200 V/µs , up to 80% di/dt = 60 A/µs, I= 1000 I = 1000 A VR = 50 V A VDRM A 125 I rr Peak reverse recovery current I H Holding current, typical VD=5V, gate open circuit 25 mA I L Latching current, typical VD=12V, tp=30µs 25 mA GATE V GT Gate trigger voltage VD=5V 25 3,5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) P GM Peak gate power dissipation P G(AV) Average gate power dissipation Pulse width 100 µs 25 5 V 25 150 W 25 3 W 21 °C/kW MOUNTING R th(j-h) Thermal impedance, DC T j Operating junction temperature F Junction to heatsink, double side cooled Mounting force Mass -30 / 125 °C 17.0 / 21.0 kN 520 tq code ORDERING INFORMATION : ATF615 S 12 A tq code standard specification VDRM&VRRM/100 D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs T 60 µs U 70 µs W 80 µs X 100µs Y 150µs g ATF615 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 05 SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARGE Tj = 125 °C 2500 1000 A 2000 Qrr [µC] 500 A 1500 250 A 1000 500 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 125 °C 1200 1000 1000 A 500 A Irr [A] 800 250 A 600 400 200 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta di/dt IF ta Softness (s factor) s = tb / ta Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) tb Vr ATF615 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 05 ON-STATE CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 6000 25 20 4000 ITSM [kA] On-state Current [A] 5000 3000 15 10 2000 5 1000 0 0 0,6 1,1 1,6 2,1 2,6 1 10 On-state Voltage [V] n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 30 Zth j-h [°C/kW] 25 20 15 10 5 0 0,001 0,01 0,1 1 t[s] 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100