Infineon BFY181ES Hirel npn silicon rf transistor Datasheet

BFY181
HiRel NPN Silicon RF Transistor
•
HiRel Discrete and Microwave Semiconductor
•
For low noise, high-gain broadband amplifiers at collector
currents from 0,5 mA to 12 mA.
•
Hermetically sealed microwave package
•
fT= 8 GHz
F = 2.2 dB at 2 GHz
•
Space Qualified
ESA/SCC Detail Spec. No.: 5611/006
Type Variant No. 03
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ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY181 (ql)
(ql) Quality Level:
Marking
-
Ordering Code
see below
Pin Configuration
C
E
B
E
Package
Micro-X1
P: Professional Quality,
Ordering Code:
Q62702F1607
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
ES: ESA Space Quality,
Ordering Code:
Q62702F1715
(see order instructions for ordering example)
Semiconductor Group
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Draft B, September 99
BFY181
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage, VBE=0
VCES
20
V
Collector-base voltage
VCBO
20
V
Emitter-base voltage
VEBO
2
V
Collector current
IC
20
mA
Base current
IB
2
Total power dissipation,
2), 3)
TS ≤ 137°C
Ptot
175
mW
Junction temperature
Tj
200
°C
Operating temperature range
Top
-65...+200
°C
Storage temperature range
Tstg
-65...+200
°C
Rth JS
< 360
K/W
1)
mA
Thermal Resistance
Junction-soldering point
3)
Notes.:
1) The maximum permissible base current for VFBE measurements is 15mA (spotmeasurement duration < 1s)
2) At TS = + 137 °C. For TS > + 137 °C derating is required.
3) TS is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
ICBO
-
-
100
µA
ICEX
-
-
100
µA
ICBO
-
-
50
nA
IEBO
-
-
25
µA
IEBO
-
-
0.5
µA
DC Characteristics
Collector-base cutoff current
VCB = 20 V, IE = 0
Collector-emitter cutoff current
VCE = 12 V, IB = 0,1µA
1.)
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter base cuttoff current
VEB = 2 V, IC = 0
Emitter base cuttoff current
VEB = 1 V, IC = 0
Notes:
1.) This Test assures V(BR)CE0 > 12V
Semiconductor Group
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Draft B, September 99
BFY181
Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
VFBE
-
-
1
V
hFE
55
100
175
-
DC Characteristics
Base-Emitter forward voltage
IE = 15 mA, IC = 0
DC current gain
IC = 5 mA, VCE = 6 V
AC Characteristics
Transition frequency
GHz
fT
IC = 10 mA, VCE = 5 V, f = 500 MHz
6.5
7.5
-
IC = 10 mA, VCE = 8 V, f = 500 MHz
-
8
-
CCB
-
0.21
0.29
pF
CCE
-
0.34
-
pF
CEB
-
0.45
0.6
pF
F
-
2.2
2.9
dB
13.5
14.5
-
dB
10
11
-
dB
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Emitter-base capacitance
VEB = 0.5V, VCB = vcb = 0, f = 1 MHz
Noise Figure
IC = 4 mA, VCE = 5 V, f = 2 GHz,
ZS = ZSopt
Power gain
1.)
Gma
IC = 10 mA, VCE = 5V, f = 2 GHz
ZS = ZSopt , ZL= ZLopt
2
Transducer gain
|S21e|
IC = 10 mA, VCE = 5 V, f = 2 GHz
ZS = ZL = 50 Ω
Notes.:
1)
Gma =
S 21
( k − k 2 − 1) ,
S12
Semiconductor Group
Gms =
S 21
S12
3 of 5
Draft B, September 99
BFY181
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level.
Ordering Form:
Ordering Code: Q..........
BFY181 (ql)
(ql): Quality Level
Ordering Example:
Ordering Code:
BFY181 ES
Q62702F1715
For BFY181 in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
Fax.:
Address:
Semiconductor Group
++89 234 24480
++89 234 28438
e-mail:
[email protected]
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
4 of 5
Draft B, September 99
BFY181
Micro-X1 Package
Infineon Technologies AG 1998. All Rights Reserved.
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Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the
Infineon
Technologies
Companies
and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
Semiconductor Group
5 of 5
Draft B, September 99
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