JMNIC BFG540 2015 Npn 9 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540; BFG540/X; BFG540/XR
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1997 Dec 03
2000 May 23
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
FEATURES
PINNING
• High power gain
PIN
DESCRIPTION
• Low noise figure
BFG540 (Fig.1) Code: N37
• High transition frequency
1
collector
• Gold metallization ensures
excellent reliability.
2
base
3
emitter
4
emitter
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optical systems.
The transistors are mounted in plastic
SOT143B and SOT143R packages.
2000 May 23
handbook, 2 columns
4
1
BFG540/X (Fig.1) Code: N43
1
collector
2
emitter
3
base
4
emitter
Top view
3
2
MSB014
Fig.1 SOT143B.
handbook, 2 columns
3
4
BFG540/XR (Fig.2) Code: N49
1
collector
2
emitter
3
base
4
emitter
2
Top view
2
1
MSB035
Fig.2 SOT143R.
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
−
15
V
IC
DC collector current
−
−
120
mA
mW
Ptot
total power dissipation
Ts ≤ 60 °C; note 1
−
−
400
hFE
DC current gain
IC = 40 mA; VCE = 8 V; Tj = 25 °C
100
120
250
Cre
feedback capacitance
IC = 0; VCE = 8 V; f = 1 MHz
−
0.5
−
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
−
18
−
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
−
11
−
dB
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
15
16
−
dB
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
−
1.3
1.8
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
−
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
−
2.1
−
dB
s 21
2
F
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
120
mA
Ptot
total power dissipation
Ts ≤ 60 °C; note 1
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
2000 May 23
3
VALUE
UNIT
290
K/W
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 8 V
−
−
50
hFE
DC current gain
IC = 40 mA; VCE = 8 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
2
−
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
0.9
−
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
0.5
−
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
−
18
−
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
−
11
−
dB
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
15
16
−
dB
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
−
1.3
1.8
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
−
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
−
2.1
−
dB
s 21
2
F
nA
pF
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
21
−
dBm
ITO
third order intercept point
note 2
−
34
−
dBm
VO
output voltage
note 3
−
500
−
mV
d2
second order intermodulation
distortion
note 4
−
−50
−
dB
Notes
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
2. VCE = 8 V; IC = 40 mA; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz.
3. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 Ω; Tamb = 25 °C;
Vp = VO; Vq = VO −6 dB; Vr = VO −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p + q − r) = 793.25 MHz.
4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
2000 May 23
4
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
MBG249
600
MRA749
250
handbook, halfpage
handbook, halfpage
hFE
Ptot
(mW)
200
400
150
100
200
50
0
10−2
0
0
50
100
150
200
10−1
1
10
Ts ( o C)
IC (mA)
102
VCE = 8 V; Tj = 25 °C.
VCE ≤ 10 V.
Fig.4
Fig.3 Power derating curve.
MRA750
1
DC current gain as a function of collector
current.
MRA751
12
handbook, halfpage
handbook, halfpage
Cre
(pF)
fT
(GHz)
0.8
VCE = 8 V
8
VCE = 4 V
0.6
0.4
4
0.2
0
10−1
0
0
4
8
VCB (V)
12
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.5
Fig.6
Feedback capacitance as a function of
collector-base voltage.
2000 May 23
5
1
10
IC (mA)
102
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
MRA752
25
MRA753
25
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
MSG
20
20
Gmax
GUM
15
15
Gmax
10
10
5
5
0
0
20
40
IC (mA)
GUM
0
60
0
VCE = 8 V; f = 900 MHz.
MSG = maximum stable gain; Gmax = maximum available gain;
GUM = maximum unilateral power gain.
20
40
IC (mA)
60
VCE = 8 V; f = 2 GHz.
Gmax = maximum available gain;
GUM = maximum unilateral power gain.
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of collector current.
MRA755
MRA754
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
GUM
GUM
40
40
MSG
MSG
30
30
20
20
Gmax
Gmax
10
0
10
102
103
f (MHz)
10
0
10
104
IC = 10 mA; VCE = 8 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available gain.
103
f (MHz)
104
IC = 40 mA; VCE = 8 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available gain.
Fig.9 Gain as a function of frequency.
2000 May 23
102
Fig.10 Gain as a function of frequency.
6
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
MEA973
−20
dim
MEA972
−20
d2
handbook, halfpage
handbook, halfpage
(dB)
−30
(dB)
−30
−40
−40
−50
−50
−60
−60
−70
10
20
30
40
50
−70
10
60
IC (mA)
Fig.11 Intermodulation distortion as a function of
collector current.
MRA760
5
handbook, halfpage
Fmin
f = 900 MHz
(dB)
4
1000 MHz
Gass
3
2000 MHz
20
30
40
50
60
IC (mA)
Fig.12 Second order intermodulation distortion as
a function of collector current.
MRA761
20
Gass
handbook, halfpage
(dB)
15
(dB)
4
5
Fmin
IC = 10 mA
40 mA
20
Gass
(dB)
15
Gass
10
3
10
5
2
5
2000 MHz
2
1000 MHz
900 MHz
500 MHz
1
Fmin
40 mA
0
0
1
10
IC (mA)
1
−5
102
10 mA
0
102
Fmin
0
103
f (MHz)
−5
104
VCE = 8 V.
VCE = 8 V.
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
2000 May 23
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
7
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
180°
0.2
0
OPT
1
0.5
0.2
2
5
0°
F = 1.5 dB
F = 2 dB
0.2
0.4
5
Fmin = 1.3 dB
0
5
F = 3 dB
0.5
−135°
2
−45°
1
MRA762
1.0
−90°
IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 900 MHz.
Fig.15 Noise circle figure.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
G = 8 dB
G = 9 dB
Gmax = 11.4 dB G = 10 dB
0.4
5
MS
0.2
180°
0.2
0
0.5
1
2
5
0°
0
OPT
Fmin = 2.1 dB
0.2
5
F = 2.5 dB
F = 3 dB
F = 4 dB
−135°
0.5
2
−45°
1
MRA763
−90°
IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 2 GHz.
Fig.16 Noise circle figure.
2000 May 23
8
1.0
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
3 GHz
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
5
0.2
40 MHz
0.5
−135°
2
−45°
1
MRA756
−90°
IC = 40 mA; VCE = 8 V; Zo = 50 Ω.
Fig.17 Common emitter input reflection coefficient (s11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRA757
IC = 40 mA; VCE = 8 V.
Fig.18 Common emitter forward transmission coefficient (s21).
2000 May 23
9
1.0
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.25
0.20
0.15
0.10
0°
0.05
−135°
−45°
−90°
MRA758
IC = 40 mA; VCE = 8 V.
Fig.19 Common emitter reverse transmission coefficient (s12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
3 GHz
40 MHz
0.2
−135°
0.5
2
5
−45°
1
MRA759
−90°
IC = 40 mA; VCE = 8 V; Zo = 50 Ω.
Fig.20 Common emitter output reflection coefficient (s22).
2000 May 23
10
1.0
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
2000 May 23
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
SOT143R
2000 May 23
REFERENCES
IEC
JEDEC
EIAJ
SC-61B
12
EUROPEAN
PROJECTION
ISSUE DATE
97-03-10
99-09-13
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 May 23
13
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
NOTES
2000 May 23
14
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
NOTES
2000 May 23
15
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 69
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/04/pp16
Date of release: 2000
May 23
Document order number:
9397 750 07059
Similar pages