Diodes DMN24H3D5L-13 Low gate threshold voltage Datasheet

DMN24H3D5L
N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCED
INFORMATION
NEW PRODUCT
Product Summary
Features and Benefits
V(BR)DSS
RDS(ON)
240V
3.5Ω @ VGS = 10V
3.5Ω @ VGS = 4.5V
6.0Ω @ VGS = 3.3V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
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•
•
•
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ID
TA = +25°C
0.48A
0.48A
0.37A
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching
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Applications
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•
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Case: SOT23
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208 e3
Lead-Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe).
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
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performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
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•
D
SOT23
D
G
S
G
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN24H3D5L-7
DMN24H3D5L-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
2H4 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2H4
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
Mar
3
2017
E
Apr
4
2018
F
May
5
Jun
6
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2019
G
Jul
7
2020
H
Aug
8
Sep
9
2021
I
Oct
O
2022
J
Nov
N
Dec
D
January 2015
© Diodes Incorporated
DMN24H3D5L
ADVANCED
INFORMATION
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
VDSS
240
V
VGSS
±20
V
ID
0.48
0.39
A
Pulsed Drain Current (10µs pulse, duty cycle ≤ 1%)
IDM
1.9
A
Maximum Body Diode Continuous Current (Note 6)
IS
1.5
A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
TA = +25°C
TA = +70°C
Steady
State
Units
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Value
0.76
1.26
163
99
PD
RθJA
Operating and Storage Temperature Range
RθJC
31
TJ, TSTG
-55 to 150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
240


V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS


1.0
µA
VDS = 192V, VGS = 0V
Gate-Body Leakage
IGSS


±100
nA
VGS = ±20V, VDS = 0V
VGS(th)
1.0
1.95
2.5
V

1.5
3.5

1.5
3.5

1.7
6.0

0.7
1.2
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 0.3A
Ω
VGS = 4.5V, ID = 0.2A
VGS = 3.3V, ID = 0.1A
V
VGS = 0V, IS = 0.3A
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 192V, VGS = 10V,
ID = 0.5A
nS
VDS = 60V, RL =200Ω
VGS = 10V, RG = 25Ω
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss

188

Output Capacitance
Coss

11

Reverse Transfer Capacitance
Crss

8

Gate Resistance
Rg

3.86

Total Gate Charge
Qg

6.6

Gate-Source Charge
Qgs

0.8

Gate-Drain Charge
Qgd

2.1

Turn-On Delay Time
tD(on)

2.3

Turn-On Rise Time
tr

2.0

tD(off)

21

tf

7.2

Turn-Off Delay Time
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
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January 2015
© Diodes Incorporated
DMN24H3D5L
1.0
1
VGS = 10V
VGS = 4.0V
VDS = 10V
VGS = 4.5V
0.6
VGS = 3.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.8
VGS = 3.5V
VGS = 3.3V
0.4
VGS = 2.7V
0.2
0.6
0.4
T A = 150°C
TA = 85°C
T A = 125°C
0.2
TA = 25°C
VGS = 2.5V
0
TA = -55°C
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
2.4
2.2
VGS = 3.3V
2
1.8
1.6
VGS = 4.5V
VGS = 10V
1.4
1.2
0
0.2
0.4
0.6
0.8
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1
2.6
2.4
VGS = 10V
ID = 0.3A
2.2
2
1.8
VGS = 4.5V
ID = 0.2A
1.6
0
1.4
1.2
1
0.8
0.6
0.4
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.0
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
ADVANCED
INFORMATION
NEW PRODUCT
0.8
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
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1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
VGS = 10V
4
TA = 150°C
3.5
TA = 125°C
3
T A = 85°C
2.5
2
T A = 25°C
1.5
1
T A = -55°C
0.5
0
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1
3.8
3.4
VGS = 4.5V
ID = 0.2A
3
2.6
VGS = 10V
ID = 0.3A
2.2
1.8
1.4
1
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
January 2015
© Diodes Incorporated
1
2.2
0.8
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
2.5
ID = 1mA
1.9
ID = 250µA
1.6
1.3
1
-50
1000
VGS GATE THRESHOLD VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
TA = 150°C
0.4
TA = 125°C
T A = 85°C
0.2
0
TA = 25°C
TA = -55°C
0.2
0.4
0.6
0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
f = 1MHz
Ciss
100
Coss
10
Crss
1
0.6
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
8
6
VDS = 192V
ID = 0.5A
4
2
0
0
1
2
3
4
5
6
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
7
10
RDS(on)
Limited
ID, DRAIN CURRENT (A)
ADVANCED
INFORMATION
NEW PRODUCT
DMN24H3D5L
1
DC
0.1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.01
TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1
PW = 1ms
PW = 100µs
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
1000
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DMN24H3D5L
1
D = 0.9
D = 0.7
ADVANCED
INFORMATION
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 163°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
G
F
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
Dimensions
Z
X
Y
C
E
Value (in mm)
2.9
0.8
0.9
2.0
1.35
E
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DMN24H3D5L
ADVANCED
INFORMATION
NEW PRODUCT
IMPORTANT NOTICE
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DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
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© Diodes Incorporated
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