Ordering number : ENA1510A ECH8668 Power MOSFET http://onsemi.com 20V, 7.5A, 17mΩ, –20V, –5A, 38mΩ, Complementary Dual ECH8 Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% P-channel Unit 20 --20 V ±10 ±10 V 7.5 --5 A 40 --40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8668-TL-H Top View 0.25 2.9 Packing Type : TL Marking 0.15 8 TP 5 Lot No. 2.3 TL 4 1 0.65 Electrical Connection 0.3 8 7 6 5 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 80112 TKIM/O2809PE TKIM TC-00002167 No. A1510-1/8 ECH8668 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=4A 4.2 RDS(on)1 ID=4A, VGS=4.5V 13 17 mΩ RDS(on)2 ID=2A, VGS=2.5V 18 26 mΩ RDS(on)3 ID=0.5A, VGS=1.8V 30 48 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time 20 V 1 μA ±10 μA 1.3 7 V S 1060 pF 180 pF Crss 135 pF td(on) tr 17.5 ns 120 ns 68 ns Fall Time td(off) tf Total Gate Charge Qg VDS=10V, f=1MHz See specified Test Circuit. Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=7.5A, VGS=0V V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=10V, VGS=4.5V, ID=7.5A 80 ns 10.8 nC 2.1 nC 2.9 0.74 nC 1.2 V --1 μA ±10 μA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage --20 V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=--3A, VGS=--4.5V 29 38 mΩ Static Drain-to-Source On-State Resistance ID=--1.5A, VGS=--2.5V 41 58 mΩ RDS(on)3 ID=--0.5A, VGS=--1.8V 64 98 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time 4.9 pF Crss 140 pF td(on) tr 14 ns 55 ns Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--5A IS=--5A, VGS=0V Switching Time Test Circuit [N-channel] 0V --4V 11 nC 2.0 nC 2.8 nC --1.2 V ID= --3A RL=3.33Ω VIN VOUT D PW=10μs D.C.≤1% VOUT G ECH8668 50Ω ns VDD= --10V VIN G P.G ns 68 --0.82 ID=4A RL=2.5Ω D 92 [P-channel] VDD=10V PW=10μs D.C.≤1% V S pF Total Gate Charge VIN 8.3 180 Fall Time 4V 0V VDS=--10V, ID=--3A --1.3 960 td(off) tf VIN --0.4 S P.G ECH8668 50Ω S Ordering Information Device ECH8668-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1510-2/8 ECH8668 ID -- VDS 3.0 2.5 VGS=1.5V 2.0 1.5 4 3 2 1.0 0.5 0 5 --25°C 3.5 6 25°C 4.0 7 Ta=75 °C 8.0V 4.5 Drain Current, ID -- A 5.0 9 3.0V 5.5 [Nch] VDS=10V 8 6.0V 6.0 ID -- VGS 10 2.0 6.5 Drain Current, ID -- A 2.5V 4.0V 7.0 [Nch] V 7.5 1 0 0.1 0.2 0.3 0.4 Drain-to-Source Voltage, VDS -- V 0 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V IT12483 RDS(on) -- VGS 40 0 0.5 [Nch] IT12484 RDS(on) -- Ta 40 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 30 ID=2A 25 4A 20 15 10 5 0 0 2 4 6 8 [Nch] =2A V, I D 20 =2.5 VGS 15 I =4A 4.5V, D V GS= 10 =4A V, I D =4.0 VGS 5 --40 --20 0 20 40 60 80 100 120 5 140 160 IT12486 IS -- VSD 10 7 5 VDS=10V [Nch] VGS=0V 3 3 2 = Ta 1.0 °C 25 -- 75 °C °C 25 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 1000 0.01 5 7 10 IT12487 Drain Current, ID -- A [Nch] 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 3 VDD=10V VGS=4V 7 0.9 1.0 IT12488 [Nch] f=1MHz 2 Ciss 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 25 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 =4A V, I D =3.1 VGS IT12485 | yfs | -- ID 10 30 0 --60 10 Gate-to-Source Voltage, VGS -- V 35 Ta=7 5°C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 35 2 td(off) 100 7 tf 5 tr 3 7 5 3 Coss Crss 2 100 td(on) 2 1000 7 10 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 5 10 IT12489 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT12490 No. A1510-3/8 ECH8668 VGS -- Qg [Nch] VDS=10V ID=7.5A Drain Current, ID -- A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC [Pch] Ta = --1.5V --2 0.1 7 5 3 2 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 2 3 5 7 0.1 2 3 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 5 7 10 2 3 5 IT14781 [Pch] --6 --5 --4 --3 --2 --0.9 0 --1.0 25° 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V IT13073 RDS(on) -- VGS 140 2 3 VGS= --10V --1 VGS= --1.2V --0.1 5 7 1.0 ID -- VGS --8 --1 0 25 °C ) Operation in this area is limited by RDS(on). --7 --3 0 s n( 8V V 1.0 7 5 3 2 Drain-to-Source Voltage, VDS -- V --1. --2.0 --2.5V --4.5V --8.0V Drain Current, ID -- A --4 0m op tio 0.01 0.01 11 ms 10 era IT12491 ID -- VDS --5 10 10 DC C --25°C 0 ID=7.5A 10 7 5 3 2 5°C 0 [Nch] PW≤10μs 10 1m 0μs s IDP=40A Ta= 7 4.0 ASO 7 5 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 [Pch] RDS(on) -- Ta 100 --2.5 IT13074 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 ID= --0.5A 80 --1.5A --3.0A 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 2 Ta 1.0 °C 75 °C °C 25 7 5 3 20 --40 --20 0 20 40 60 80 100 120 140 160 IT13076 IS -- VSD [Pch] VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 0.1 --0.01 40 --10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Pch] 7 5 -25 =- --1.5A , I D= --2.5V = V GS --3.0A V, I D= .5 4 -V GS= Ambient Temperature, Ta -- °C 10 3 60 0 --60 --8 VDS= --10V 2 A --0.5 ,I = --1.8V D = S VG IT13075 | yfs | -- ID 3 80 Ta= 75°C 25°C --25° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT13077 --0.01 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V --1.2 IT13078 No. A1510-4/8 ECH8668 SW Time -- ID 1000 [Pch] VDD= --10V VGS= --4V 5 3 2 td(off) 100 tf 7 5 3 tr 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 Coss Crss 2 7 5 7 --10 [Pch] --100 7 5 3 2 VDS= --10V ID= --5A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC PD -- Ta 1.8 0 --2 9 10 11 IT13081 --4 --6 --8 --10 --12 --14 --16 --18 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 5 IT13079 VGS -- Qg --4.5 Allowable Power Dissipation, PD -- W 7 100 Drain Current, ID -- A 0 Ciss 1000 td(on) 10 7 --0.01 [Pch] f=1MHz 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 Ciss, Coss, Crss -- VDS 3 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --20 IT13080 ASO [Pch] IDP= --40A PW≤10μs 10 0 1m μs s 10 ms 0m s ID= --5A DC 10 op era tio n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13082 [Nch/Pch] When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13083 No. A1510-5/8 ECH8668 Embossed Taping Specification ECH8668-TL-H No. A1510-6/8 ECH8668 Outline Drawing ECH8668-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1510-7/8 ECH8668 Note on usage : Since the ECH8668 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1510-8/8