DMP4015SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits RDS(ON) Max ID 100% Unclamped Inductive Switch (UIS) Test in Production TA = +25°C Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 11mΩ @ VGS = -10V -10.1A 15mΩ @ VGS = -4.5V -8.8A NEW PRODUCT -40V Description and Application Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. making it ideal for high-efficiency power management applications. DC-DC Converters Power Management Functions Analog Switch SO-8 Top View UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) S D S D S D G D Top View Internal Schematic D G S Equivalent circuit Ordering Information (Note 4) Part Number DMP4015SSS-13 Notes: Qualification Standard Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 1 5 8 5 P4015SS P4015SS YY WW YY WW 4 1 DMP4015SSS Document number: DS35416 Rev. 11 - 2 = Manufacturer’s Marking P4015SS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 16 = 2016) WW = Week (01 to 53) 4 1 of 7 www.diodes.com January 2017 © Diodes Incorporated DMP4015SSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Steady State Continuous Drain Current (Note 5) VGS = -4.5V Steady State Continuous Drain Current (Note 6) VGS = -10V Steady State Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value -40 ±25 -9.1 -7.2 Unit V V ID -7.8 -6.2 A ID -10.1 -8 A A IDM IAS EAS -8.8 -7 -100 -22 242 A A mJ Symbol PD RθJA PD RθJA RθJc TJ, TSTG Value 1.45 88 1.82 70 7.6 -55 to +150 Unit W °C/W W °C/W °C/W °C ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) Avalanche Energy (Note 7) A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 -1 100 μA VGS(TH) Static Drain-Source On-Resistance RDS(ON) |Yfs| VSD -1.5 -2 7 9 26 -0.7 -2.5 11 15 -1 Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF 4234 1036 526 7.77 47.5 14.2 13.5 13.2 10 302.7 137.9 Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V nA V mΩ S V Test Condition VGS = 0V, ID = -250μA VDS = -40V, VGS = 0V VGS = 25V, VDS = 0V VDS = VGS, ID = -250μA VGS = -10V, ID = -9.8A VGS = -4.5V, ID = -9.8A VDS = -20V, ID = -9.8A VGS = 0V, IS = -1A pF VDS = -20V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -20V, VGS = -5V ID = -9.8A ns VGS = -10V, VDD = -20V, Rg = 6Ω, ID = -1A, RL = 20Ω 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7 .UIS in production with L = 1mH, TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMP4015SSS Document number: DS35416 Rev. 11 - 2 2 of 7 www.diodes.com January 2017 © Diodes Incorporated DMP4015SSS 30.0 30 -VGS=4.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 -VGS=3.5V 20.0 -VGS=4.5V 15.0 -VGS=10V 10.0 -VGS=3.0V 20 15 10 5 5.0 -VGS=2.5V 0.0 0 0.5 1 1.5 -V DS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics R DS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 0.015 0.01 0.005 0 0 0 2 0.02 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.02 5 T A = 150 C -VGS= 4.5V TA = 125C 0.015 TA = 85C TA = 25C 0.01 TA = -55 C 0.005 0 0 30 5 10 15 20 25 30 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.02 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) (NORMALIZED) 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) (NORMALIZED) NEW PRODUCT 25.0 1.4 1.2 1 0.8 0.012 0.008 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 5 On-Resistance Variation with Temperature Document number: DS35416 Rev. 11 - 2 VGS =10V ID=10A 0.004 0.6 -50 DMP4015SSS -VGS=4.5V -I D=5.0A 0.016 3 of 7 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature January 2017 © Diodes Incorporated 2.4 30 2 25 -IS, SOURCE CURRENT (A) NEW PRODUCT -VGS(TH), GATE THRESHOLD VOLTAGE (V) DMP4015SSS 1.6 1.2 0.8 20 15 10 5 0.4 0 -50 0 0 -25 0 25 50 75 100 125 150 C)) TA, AMBIENT TEMPERATURE ° (癈 Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 120 10 10000 f=1MHz VGS, GATE-SOURCE VOLTAGE (V) CT , JUNCTION CAPACITANCE (pF) Ciss Coss 1000 C rss 100 0 5 10 15 20 25 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 6 4 2 0 0 30 100 RDS(ON) Limited 8 90 600 PW =10µs EAS, AVALANCHE ENERGY (mJ) 10 PW =100µs 1 PW =1ms PW =10ms PW =100ms PW =1s PW =10s 0.1 TJ(Max) = 150℃ TA = 25℃ Single Pulse DC 70 EAS 400 60 50 300 40 IAS 200 30 20 100 10 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig.11 SOA, Safe Operation Area DMP4015SSS Document number: DS35416 Rev. 11 - 2 - IAS, AVALANCHE CURRENT (A) -ID, DRAIN CURRENT (A) 80 500 4 of 7 www.diodes.com 0 0 0.2 0.4 0.6 0.8 INDUCTOR (mH) Fig. 12 Single-Pulse Avalanche Tested 1.0 0 January 2017 © Diodes Incorporated DMP4015SSS r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 75癈 /W °C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.001 DMP4015SSS Document number: DS35416 Rev. 11 - 2 0.01 0.1 1 10 100 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 1000 10000 January 2017 © Diodes Incorporated DMP4015SSS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. NEW PRODUCT SO-8 E 1 b E1 h ) ides All s 9° ( A R .1 0 e Q 45° 7° c 4° ± 3° A1 E0 L Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMP4015SSS Document number: DS35416 Rev. 11 - 2 X 6 of 7 www.diodes.com January 2017 © Diodes Incorporated DMP4015SSS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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