DMG3406L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) Max ID Max TA = +25°C 50mΩ @ VGS = 10V 3.6A 70mΩ @ VGS = 4.5V 2.8A V(BR)DSS NEW PRODUCT 30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) D SOT23 D G S G S Top View Top View Pin Out Internal Schematic Ordering Information (Note 4) Notes: Part Number Case Packaging DMG3406L-7 SOT23 3000/Tape & Reel DMG3406L-13 SOT23 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N36 = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: C = 2015) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMG3406L Document number: DS37639 Rev. 2 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D January 2015 © Diodes Incorporated DMG3406L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Units Drain-Source Voltage Characteristic VDSS 30 V Gate-Source Voltage VGSS V Pulsed Drain Current (Note 6) (Pulse width 10µS, Duty Cycle 1%) IDM ±20 3.6 2.9 30 Maximum Body Diode Forward Current (Note 6) IS 1.4 A Symbol Value Unit NEW PRODUCT Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Power Dissipation (Note 6) 0.77 W 164 °C/W PD 1.4 W RθJA 90 °C/W TJ, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range PD RθJA Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 30 V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS 1.0 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V VGS(TH) 1.0 2.0 V VDS = VGS, ID = 250μA 25 50 OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) mΩ 31 70 VSD 0.75 1.0 V Input Capacitance Ciss 495 pF Output Capacitance Coss 50 pF Reverse Transfer Capacitance Crss 43 pF Gate Resistance Rg 2.0 Ω Total Gate Charge (VGS = 4.5V) Qg 5.3 nC Total Gate Charge (VGS = 10V) Qg 11.2 nC Gate-Source Charge Qgs 1.2 nC Gate-Drain Charge Qgd 1.9 nC Turn-On Delay Time tD(ON) 2.3 ns Turn-On Rise Time tR 3.3 ns Turn-Off Delay Time tD(OFF) 10.3 ns tF 2.3 ns Diode Forward Voltage VGS = 10V, ID = 3.6A VGS = 4.5V, ID = 2.8A VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Turn-Off Fall Time Notes: VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, ID = 3.6A VDD = 15V, VGS = 10V, RL = 2.2Ω, RG = 3Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMG3406L Document number: DS37639 Rev. 2 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMG3406L 20 30.0 VGS=4.0V VDS=5V 16 VGS=10.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 18 VGS=3.5V 20.0 VGS=4.5V VGS=3.0V 15.0 10.0 VGS=2.5V 14 12 10 TA=150℃ 8 TA=125℃ 6 4 TA=85℃ 5.0 TA=25℃ 2 VGS=2.0V 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.04 VGS=4.5V 0.03 VGS=10V 0.01 0 1 VGS= 10V 150℃ 0.04 0.03 85℃ 0.025 25℃ 0.02 -55℃ 0.015 0.01 0.005 0 2 4 6 8 10 12 14 16 18 3 3.5 4 4.5 5 0.04 0.02 ID=2.8A 0 2 20 Figure 5. Typical On-Resistance vs. Drain Current and Temperature Document number: DS37639 Rev. 2 - 2 2.5 0.06 ID, DRAIN CURRENT (A) DMG3406L 2 ID=3.6A RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.05 125℃ 1.5 0.08 3 0.035 1 0.1 5 7 9 11 13 15 17 19 21 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.045 0.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.05 0.02 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0 TA=-55℃ 0 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) NEW PRODUCT 25.0 3 of 6 www.diodes.com 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 1.8 VGS=10V, ID=5.0A 1.6 1.4 1.2 VGS=4.5V, ID=3.0A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature January 2015 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 2 0.08 0.07 0.06 0.05 VGS=4.5V, ID=3.0A 0.04 0.03 VGS=10V, ID=5.0A 0.02 0.01 1.8 1.6 ID=1mA 1.4 1.2 ID=250mA 1 0.8 0.6 0 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 20 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Junction Temperature 1000 f=1MHz CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 18 16 VGS=0V, TA=150℃ 14 12 VGS=0V, TA=125℃ 10 8 VGS=0V, TA=85℃ 6 VGS=0V, TA=25℃ 4 VGS=0V, TA=-55℃ 2 Ciss 100 Coss Crss 10 0 0 0.3 0.6 0.9 1.2 0 1.5 5 10 15 20 25 30 VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 100 10 RDS(ON) Limited ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT DMG3406L 8 6 VDS=15V, ID=3.6A 4 2 0 2 4 6 8 10 Document number: DS37639 Rev. 2 - 2 PW=10ms DC 1 PW=10s 0.1 12 Qg,TOTAL GATE CHARGE (nC) Figure 11. Gate Charge DMG3406L PW=1ms 10 0.01 0 PW=100ms 4 of 6 www.diodes.com TJ(MAX)=150℃ TA=25℃ PW=1s Single Pulse DUT on 1*MRP board VGS=10V 0.1 PW=100ms 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 January 2015 © Diodes Incorporated DMG3406L NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.3 D=0. 5 0.1 D=0.9 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=162℃/W D=Single Pulse Duty Cycle, D=t1 / t2 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7° H K1 GAUGE PLANE 0.25 J K a M A L1 L C B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 8° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMG3406L Document number: DS37639 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com January 2015 © Diodes Incorporated DMG3406L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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