Vishay FESE16XT Ultrafast plastic rectifier Datasheet

FESE16xT
www.vishay.com
Vishay General Semiconductor
Ultrafast Plastic Rectifier
FEATURES
TO-220AC
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
FESE16xT
PIN 1
PIN 2
TYPICAL APPLICATIONS
CASE
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PRIMARY CHARACTERISTICS
IF(AV)
16 A
VRRM
50 V to 600 V
IFSM
250 A
trr
35 ns, 50 ns
VF
0.975 V, 1.30 V, 1.50 V
TJ max.
150 °C
Package
TO-220AC
Polarity: As marked
Diode variations
Single die
Mounting Torque: 10 in-lbs max.

MECHANICAL DATA
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
SYMBOL
FESE
16AT
FESE
16BT
FESE
16CT
FESE
16DT
FESE
16FT
FESE
16GT
FESE
16HT
FESE
16JT
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
350
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
500
600
V
Maximum average forward
rectified current at TC = 100 °C
IF(AV)
16
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
250
A
TJ, TSTG
-65 to +150
°C
PARAMETER
Operating storage and temperature range
Revision: 23-Feb-16
Document Number: 87918
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FESE16xT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage
Maximum DC reverse current at
rated DC blocking voltage
SYMBOL
FESE FESE FESE FESE FESE FESE FESE FESE
UNIT
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
VF (1)
16 A
TC = 25 °C
0.975
1.30
10
IR
TC = 100 °C
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance
4.0 V, 1 MHz
CJ
1.50
μA
500
35
50
175
V
ns
145
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to case
FESE FESE FESE FESE FESE FESE FESE FESE
UNIT
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
1.2
RJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AC
FESE16JT-E3/45
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.78
45
50/tube
Tube
Revision: 23-Feb-16
Document Number: 87918
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FESE16xT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1000
Resistive or Inductive Load
Instantaneous Reverse Leakage
Current (μA)
Average Forward Rectified Current (A)
20
16
12
8
4
0
TJ = 125 °C
100
10
TJ = 100 °C
TJ = 25 °C
1
0.1
0
50
100
150
0
20
40
60
80
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
1000
250
Junction Capacitance (pF)
TJ = TJ max.
8.3 ms Single Half Sine-Wave
(JEDEC Method)
200
150
100
50
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
50 V to 400 V
500 V to 600 V
10
0
1
0.1
100
10
1
10
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
Instantaneous Forward Current (A)
100
Case Temperature (°C)
300
Peak Forward Surge Current (A)
50 V to 200 V
300 V to 400 V
TJ = 125 °C
10
TJ = 25 °C
1
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100
















Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 23-Feb-16
Document Number: 87918
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FESE16xT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AC
0.185 (4.70)
0.175 (4.44)
0.415 (10.54) MAX.
0.159 (4.04) DIA.
0.143 (3.64) DIA.
0.113 (2.87)
0.103 (2.62)
0.055 (1.39)
0.045 (1.14)
0.260 (6.6)
0.236 (6.0)
0.603 (15.32)
0.573 (14.55)
1
2
0.160 (4.06)
0.140 (3.56)
0.060 (1.50)
0.047 (1.20)
0.560 (14.22)
0.530 (13.46)
PIN 1
0.040 (0.84)
0.024 (0.62)
PIN 2
0.20 (5.08)
CASE
0.022 (0.56)
0.014 (0.36)
Revision: 23-Feb-16
Document Number: 87918
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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
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Revision: 08-Feb-17
1
Document Number: 91000
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