E909.07 TRANSIMPEDANCE AMPLIFIER WITH HIGH SENSITIVITY PRODUCTION DATA - MAR 25, 2014 Features General Description ÿ Increases proximity detection range of E909.05/E909.06 by a factor of 5 (*) ÿ Improves signal to noise ratio by a factor of 3 ÿ Optical receiver with high sensitivity (limiting output): total transimpedance typ. 422MΩ ÿ Integrated op-amp for buffering, gain or additional active filtering ÿ Very low phase shift in input overdrive ÿ High ambient light suppression up to photo currents of 10mA ÿ Signal bandwidth up to 500kHz ÿ No current consumption in standby mode ÿ Automotive qualified according to AEC-Q100 The optical receiver device consists of a first stage transimpedance amplifier (TIA) with differential input, limiting amplifiers with integrated high pass filter characteristics and differential outputs OUTP_LA / OUTN_LA and a secondary linear output OUT. A very high sensitivity equivalent to a transimpedance resistance of typ. 422MΩ is achieved at the limiting outputs. By using a limiting amplifier no phase shift occurs if the input is overdriven. Ambient light equivalent to a constant photo current up to 10mA is suppressed with an integrated gyrator. Together with the HALIOS® chip set E909.05/E909.06 motion detectors a detection range of several meters can be realized. By switching the output to high impedance state several optical receivers can be multiplexed to the input of a HALIOS® multi-purpose sensor IC E909.05/E909.06. (*) in systems with highly focused IR beams and optimized optical sensor surfaces Applications ÿ Optical receivers ÿ Transimpedance amplifiers ÿ Multiplex function for channel expander of the chip set E909.05/E909.06 Ordering Information Ordering No.: Temp. RangeAmb E90907A52C RVDD CVDD GVDD CGHS GHS AVDD_LA DP CINP INN INP AVDD IO_CTRL Gyrator AMP - - + + E909.06 HALIOS® Sensor IC OUT GAIN_CTRL A CGLS GLS QFN20L4 AVDD C CINN -40°C to +105°C Package OUTP_LA AVDD/2 OUTN_LA Gyrator Limiting Amplifier AN KA ON_LA GPIO_1 ON GPIO_2 E909.07 GGND AGND AGND_LA Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet 1/13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 1 Package and Pinout 1.1 No 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Pin Description Name INN INP A GLS GHS GVDD GGND AMP GAIN_CTRL ON_LA OUTP_LA OUTN_LA ON OUT AVDD_LA AGND_LA IO_CTRL AVDD AGND C EP Type A_I A_I A_IO A_IO A_IO S S A_IO D_I D_I A_O A_O D_I A_O S S D_I S S A_IO S Description Negative input of transimpedance amplifier (TIA) Positive input of transimpedance amplifier (TIA) Anode of photodiode connected to high side gyrator Low pass frequency control (to GGND) High pass frequency control (to GVDD) Supply gyrator Ground gyrator Output of TIA or input of limiting amplifier (LA) controlled by IO_CTRL Controls gain of LA, integrated pull down Enabling output of LA , active Hi, integrated pull-down Positive output limiting amplifier Negative output limiting amplifier Activation signal for amplifier-IC, active Hi, integrated pull-down Output of OPAMP Supply limiting amplifier (LA) Ground limiting amplifier (LA) Controls the input of the limiting amplifier, integrated pull down Supply transimpedance amplifier (TIA) and inverting amplifier Analogue ground Cathode of photodiode connected to low side gyrator Exposed Die Pad Table 1: Pin Description Explanation of Types: A = Analogue, D = Digital, S = Supply, I = Input, O = Output, B = Bidirectional, HV = High Voltage When connecting the supply pins the requirements of the entire system has to be taken into account. For highest sensitive it is recommended to use a separate RC filter for every supply input. The ground pins GGND, AGND_LA and AGND must be soldered together in any application! Pin EP, IO_CTRL and GAIN_CTRL must be soldered to Ground or VDD. See Chapter 5.7 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 2 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 1.2 Package Reference The device is available in a Pb free, RoHS compliant, 20-lead Quad Flat No Lead QFN20L4 package with 16mm² (0.024 square inch) according to JEDEC standard MO-220- K ; Variant: VGGD-5. 1.3 Package Pinout Fig. 2: Package Pinout E909.07 (Top View) Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 3 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 2 Block Diagram GVDD GHS IO_CTRL GAIN_CTRL AVDD AVDD_LA Gyrator C INN OUT INP Transimpedance Amplifier Linear Amplifier AMP AVDD 2 OUTP_LA A OUTN_LA Limiting Amplifier GLS ON_LA Gyrator ON GGND AGND AGND_LA Fig. 3: Block Diagram E909.07 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 4 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 3 Operating Conditions 3.1 • • • Absolute Maximum Ratings Operating the device at or beyond these limits may cause permanent damage. All voltages are referred to ground (0V). Currents flowing into the circuit have positive values. No. Description 1 Negative supply voltage 2 Positive supply voltage 3 5 Voltage digital I/O pins: ON, ON_LA, IO_CTRL, GAIN_CTRL Input current at digital pins: ON_LA, IO_CTRL, GAIN_CTRL Voltage at analogue pins 6 7 8 Input current at analogue pins Junction temperature Ambient temperature 4 9 Storage temperature 10 Power dissipation Condition Symbol AGND, GGND, AGND_LA AVDD, GVDD, AVDD_LA V(DPIN) I(DPIN) V(APIN) packaged devices I(APIN) TJ TA TA ≤ 85°C TSTG PTOT Min 0 Max 0 Unit V -0,3 +3,6 V -0,3 AVDD + 0,3 -10 10 -0,3 AVDD + 0,3 -100 100 -40 +125 -40 +105 -40 +150 150 V mA V mA °C °C °C mW Table 2: Absolute Maximum Ratings Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 5 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 3.2 Recommended Operating Conditions • Parameters are guaranteed within the range of recommended operating conditions unless otherwise specified. • All voltages are referred to • ground (0V). • Currents flowing into the circuit have positive values. No. Description Condition Symbol Min Typ Max Unit 1 Positive supply voltage AVDD, GVDD 3.0 3.3 3.5 V 10 µF 2 VDD filter and buffer capacitor Low-ESR type CVDD 3 Input coupling capacitors CINN = CINP CINN, CINP 0.22 0.47 10 nF 4 Gyrator coupling capacitors CGLS = CGHS CGLS, CGHS 10 47 220 nF 5 Capacitive load at output OUT CLOAD, OUT 100 pF 6 Capacitive load at output AMP CLOAD, AMP 100 pF 7 Capacitive load at Pin CLOAD, OUTx_LA 100 pF OUTP_LA, OUTN_LA 8 Junction Temperature normal operation TJ -40 +105 °C 9 Thermal resistance, junction to QFN20L4 RT,J-A 45 °C/W ambient 10 VDD Filter resistor RVDD 10 20 Ω 11 Capacitance of photo diode at CDIODE 70 250 pF input C / A Table 3: Recommended Operating Conditions 4 Detailed Electrical Specification 4.1 Supply No. Description 1 Supply current 1), 2) 2 Average supply current 1), 3), 4) 3 Sleep Mode supply current 1), 2) Condition ON = AVDD, ON_LA = AVDD, IC = IA = 0mA, ON = AVDD, ON_LA = AVDD, IC = IA = 0mA, ON = 0V, ON_LA = 0V, Symbol IVDD IVDD,AV Min Typ 3.5 Max 5.0 0.23 IVDD,SLEEP Unit mA mA 1 µA Table 4: Electrical Parameters Supply 1) Average current from photodiode PD negligible 2) Total supply current to AVDD, AVDD_LA and GVDD IVDD = IAVDD + IAVDD_LA + IGVDD 3) Power Consumption Calculation Sample Rate: 10ms Settling time TSW : 500µs Measurement time: 250µs Duty cycle: (500µs + 250µs)/10ms ~ 1/13 IVDD,AV = 5mA * duty cycle ~ 385µA 4) Not tested in production test Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 6 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 4.2 Transimpedance Amplifier No. Description 1 Internal feedback resistance of TIA 2 Input impedance INP 3 Maximum output voltage (TIA drive capability) 4 Minimum output voltage (TIA drive capability) 5 Common Mode Rejection Rate ∆VOUT_TIA_cm / ∆VOUT_TIA_dm 6 Internal feedback capacitor of transimpedance amplifier 1) 7 -3dB Corner frequency TIA Condition Measured from INN to AMP Symbol RTIA Min 75 Typ 100 Max 125 Unit kΩ RINP 75 2.8 100 125 kΩ V 0.5 V IAMP = -500µA AVDD=3.3V IAMP = +500µA VAMP, max @22kHz CMRR 80 dB Cf 2.25 pF fCS 600 kHz VAMP, min Table 5: Electrical Parameters Transimpedance Amplifier 4.3 Gyrator No. Description 1 Voltage drop at low-side gyrator input (A) 2 Voltage drop at high-side gyrator input (C) 3 Max. photo current Condition IA = 10mA Symbol VA - VGGIND Min 0.75 Typ 1.0 Max 1.25 Unit V IC = -10mA VGVDD - VC 0.75 1.0 1.25 V IPhoto 10 mA Table 6: Electrical Parameter Gyrator 4.4 Linear Amplifier No. Description 1 Gain linear amplifier 2 Maximum output voltage 3 4 Minimum output voltage -3dB Corner frequency Condition ILIN = -500µA AVDD = 3.3V ILIN = +500µA Symbol G0, lin VLIN,max Min Typ -10 Max Unit V/V V 1.0 V kHz 2.3 VLIN,min fCS 600 Table 7: Electrical Parameters Linear Amplifier 1) Not tested in production test Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 7 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 4.5 High pass filter and limiting amplifier No. Description 1 Differential gain AVOUT_LA= (OUTP_LA OUTN_LA) / AMP 2 Differential gain AVOUT_LA= (OUTP_LA OUTN_LA) / AMP 3 Maximum output voltage 2) 4 Minimum output voltage 2) 5 Single ended output resistance 6 -3dB Corner frequency high pass filter1) Overall gain (TIA +LA) 1) Condition GAIN_CTRL = 0 Symbol AVOUTL0 GAIN_CTRL = 1 AVOUTL1 65 V/V IOUTP_LA = -10µA VOUTP_LA,max V IOUTP_LA = -10µA VOUTP_LA,min ROUTN_LA AVDD 0.1 AVDD 1.1 1.5 kΩ fG 15 kHz G RTIA* AVOUTL0 MΩ 1) 2) 7 GAIN_CTRL=0 IO_CTRL = 0 Min Typ Max (AVOUTL1)2) Unit V/V V Table 8: Electrical Parameter High pass filter and limiting amplifier 4.6 Digital Control Inputs No. Description Condition 1 Input low level (Pin ON, ON_LA) 2 Input high level (Pin ON, ON_LA) Settling time after switching on ON_LA="0" 3 the limiting amplifier1) "1" 4 Settling time after switching from sleep to operating mode1) 5 Pull down resistor 1) Symbol VIL Min Typ VIH AVDD0.8 Max 0.8 Unit V V TSON 1 µs TSW 500 µs RPD 800 1600 kΩ Table 9: Electrical Parameters Digital Control Inputs 1) Not tested in production test 2) For proper operation, the output pins OUTN_LA & OUTP_LA must be decoupled with capacitors close to the E909.07. The load at these output pins shall be a load against ground. Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 8 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 5 Functional Description 5.1 Brief Functional Description The E909.07 is transimpedance amplifier with high amplification. The differential inputs INN, INP and the differential limiting outputs OUTP_LA, OUTN_LA are forming the main signal path. Within the application field of optical receiver systems it uses a photodiode as input signal source. The differential outputs are designed for use in HALIOS® optical detector systems. The total transimpedance figure in this path is 200MΩ minimum. Together with the HALIOS® chip set E909.05/ E909.06 motion detectors with a detection range of several meters can be realized. By switching the output to high impedance state several optical receivers for multiple input channels can be multiplexed to one input of a HALIOS® sensor IC E909.05/E909.06, which enables a very economical construction of multi sensor systems with multiple optical detector nodes. These can be operated at minimum power consumption by use of the SLEEPmode feature of the E909.07 (controlled by pin ON) 5.2 Supply The input GVDD, AVDD should be low pass filtered to increase ambient light suppression and EMC robustness. 5.3 Transimpedance Amplifier The current input signal from an external differential source connected between INN and INP - typically a photodiode - is amplified in a first stage transimpedance amplifier (TIA) with a typical transimpedance figure of 100kΩ. The input photodiode has to be AC-coupled to the inputs by capacitors (CINN , CINP). The output of this TIA-stage is accessible at terminal AMP. In order to achieve a good suppression of common mode disturbances at the pins C and A, the AC coupling capacitors CINN, CINP should have a very good matching. 5.4 Gyrator Gyrator input stages at nodes C (cathode) and A (anode) are used to define the input operating point of the input photo diode properly. These gyrators are designed for a maximum DC current of 10mA (photo current) which corresponds to a very high level of ambient light applied to the photo diode. When the device is switched off (ON = 0) the gyrator is also switched off. 5.5 Linear Amplifier Additionally to the limiting amplifier output an inverting amplifier output with an amplification factor of typ. -10 (20dB) is available and can be routed into the signal path. This results in a total transimpedance of typ. 2MΩ at OUT with respect to the input of the TIA. 5.6 High Pass Filter and Limiting Amplifier The limiting amplifier consists of six differential amplifier stages. At the input and after the third stage a high pass filter is placed. Thus the frequency behaviour between the limiting amplifier input IN_LA and the outputs OUTP_LA, OUTN_LA can be described with a second order high pass filter. These stages provide symmetrical outputs at OUTP_LA, OUTN_LA which are inverted with respect to each other. The differential gain (in the linear range) from the input of limiting amplifier (AMP) to the output (OUTP_LA - OUTN_LA) has a typ. value of +4225. In case of input overdrive excessive phase shift is Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 9 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 avoided by the limiting amplifiers. The outputs OUTP_LA, OUTN_LA are source follower outputs, which buffer the last differential stage of the limiting amplifier. The external load at these outputs should not be smaller than 10k, to avoid reduction of the output swing. The maximum output voltage swing has a typical value of 1V. The limiting outputs can be switched to high impedance by use of control input ON_LA. This allows output multiplexing of several amplifier devices, e.g. in multi-sensor systems. Using the input ON_LA during multiplex mode to switch between the channels of several E909.07 switching times of 1µs can be realized. 5.7 Digital Control Inputs Four control inputs are provided: • ON_LA enables the limiting amplifier and activates the outputs OUTP_LA, OUTN_LA by closing the switch between the limiting amplifier and the output pins when pulled to high level. An internal pull down keeps the outputs in OFF mode (high impedance) when the pin is left open. If ON_LA is 0 the outputs are in high-impedance state. • Input ON is used to switch the device from OPERATING mode to SLEEP mode. The device is active, when ON is pulled high to supply voltage AVDD. With ON = 0, the all components in the devices are switched off and the current consumption drops to almost zero. An internal pull-down will hold the device in SLEEP mode when the pin is left open. • Input GAIN_CTRL allows to reduce the amplification factor of the limiting amplifier by bypassing one of the two amplification stages. • With GAIN_CTRL = 0 both stages are active, the amplification factor has its maximum value. • With GAIN_CTRL = 1 one amplifier stage is bypassed thus reducing the amplification factor by a factor of 2. • Input IO_CTRL allows to disconnect the TIA output from the pin AMP. Then it is possible to control the limiting amplifier with an external signal. In all cases, the TIA is connected to the linear amplifier. • IO_CTRL = 0: The output of the transimpedance amplifier (TIA) is connected to the input of the limiting amplifier. The TIA output signal is available on the pin AMP which is of type output. • IO_CTRL = 1: The output of the transimpedance amplifier is disconnected from the input of the limiting amplifier. Pin AMP is the input of the limiting amplifier. PIN ON_LA ON GAIN_CTRL IO_CTRL Status 0 1 0 1 0 1 0 1 Description Outputs OUTP_LA, OUTN,LA are inactive (high resistance state) SLEEP Mode Operating Mode Both amplification stages are active, the amplification factor has its maximum value The second amplification stage is bypassed TIA Output connected to input of limiting amplifier TIA Output disconnected to input of limiting amplifier. Limiting amplifier could be controlled by external signal (AMP) Table 10: Table of Digital Control Inputs Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 10 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 6 ESD, Latch up and EMC 6.1 Electro Static Discharge (ESD) Standard Model Capacitance Resistance Minimum withstand Voltage Supply and interface pins (OUTP_LA, OUTN_LA, GGND, AGND_LA, AGND, GVDD, AVDD_LA, AVDD) AEC-Q100-002 Human Body Model 100 pF 1,5 kΩ +/- 2 kV +/- 4 kV Table 11: ESD on IC Level, Human Body Model (HBM) Standard Model Resistance Minimum withstand Voltage Pulse rise time (10%-90%) AEC-Q100-011 Charged Device Model 1Ω +/- 500 V <400 ps Table 12: ESD on IC Level, Charged Device Model (CDM) 6.2 Latch-up Latch-up performance is validated according JEDEC standard JESD 78 in its valid revision. 6.3 EMC The contents of this chapter were not specified yet! Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 11 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 7 Package Information The E909.07 is available in a Pb free, RoHs compliant QFN20L4 plastic package, for this exposed pad size is no variant within JEDEC MO-220 K available. The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020 with a soldering peak temperature of (260+5)°C. Description Symbo l mm inch min typ max min typ max Package height A 0.80 0.90 1.00 0.031 0.035 0.039 Stand off Thickness of terminal leads, including lead finish Width of terminal leads A1 0.00 0.02 0.05 0.000 0.002 A3 -- 0.20 REF -- -- 0.00079 0.0079 b 0.18 0.25 0.30 0.0071 0.0098 0.012 D/E -- 4.00 BSC -- -- 0.157 BSC -- D2 / E2 2.50 2.65 2.80 0.098 0.104 0.110 Package length / width Length / width of exposed pad REF -- Lead pitch e -- 0.50 BSC -- -- 0.020 BSC -- Length of terminal for soldering to substrate L 0.35 0.40 0.45 0.014 0.016 0.018 Number of terminal positions N 20 20 Note: the mm values are valid, the inch values contains rounding errors Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 12 of 13 QM-No.: 25DS0047E.04 Transimpedance Amplifier with High Sensitivity E909.07 PRODUCTION DATA – MAR 25, 2014 WARNING – Life Support Applications Policy Elmos Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing Elmos Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an Elmos Semiconductor AG Product could cause loss of human life, body injury or damage to property. In the development of your design, please ensure that Elmos Semiconductor AG products are used within specified operating ranges as set forth in the most recent product specifications. 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However, no responsibility is assumed for inaccuracies. Furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of Elmos Semiconductor AG or others. Contact Information Headquarters Elmos Semiconductor AG Heinrich-Hertz-Str. 1 • D-44227 Dortmund (Germany) : +492317549100 : [email protected] : www.elmos.com Sales and Application Support Office North America Elmos NA. Inc. 32255 Northwestern Highway • Suite 220 Farmington Hills MI 48334 (USA) : +12488653200 : [email protected] Sales and Application Support Office Korea and Japan B-1007, U-Space 2, #670 Daewangpangyo-ro, Sampyoung-dong, Bunddang-gu, Sungnam-si Kyounggi-do 463-400 Korea : +82317141131 : [email protected] Sales and Application Support Office China Elmos Semiconductor Technology (Shanghai) Co., Ltd. Unit London, 1BF GC Tower • No. 1088 Yuan Shen Road, Pudong New District • Shanghai, PR China, 200122 : +862151785178 : [email protected] Sales and Application Support Office Singapore Elmos Semiconductor Singapore Pte Ltd. 3A International Business Park #09-13 ICON@IBP • 609935 Singapore : +65 6908 1261 : [email protected] © Elmos Semiconductor AG, 2013. Reproduction, in part or whole, without the prior written consent of Elmos Semiconductor AG, is prohibited. Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet Page 13 of 13 QM-No.: 25DS0047E.04