DXT5551 160V NPN TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 160V IC = 600mA High Collector Current Complementary PNP Type: DXT5401 Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.052 grams (Approximate) SOT89 C E B C C B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Part Number DXT5551-13 Notes: Marking K4N Reel Size (inches) 13 Tape Width (mm) 12 Quantity per Reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information (Top View) YWW K4N DXT5551 Document number: DS31225 Rev. 4 - 2 = Manufacturer’s Marking K4N = Product Type Marking Code YWW = Date Code Marking Y = Last Digit of Year (ex: 7 = 2017) WW = Week Code (01 to 52) 1 of 6 www.diodes.com April 2017 © Diodes Incorporated DXT5551 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V IC 600 mA Collector Current Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) PD RJA TJ, TSTG Value 0.75 1.2 166 104 -55 to +150 Unit W °C/W °C ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol Value Unit JEDEC Class ESD HBM ESD MM 4,000 400 V V 3A C 5. For a device mounted with the exposed collector pad on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DXT5551 Document number: DS31225 Rev. 4 - 2 2 of 6 www.diodes.com April 2017 © Diodes Incorporated DXT5551 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 180 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 8) BVCEO 160 — — V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 6.0 — — V IE = 100µA Collector Cut-off Current ICBO — — 50 nA VCB = 120V 50 µA VCB = 120V, TA = +100°C Emitter Cut-off Current IEBO — — 50 nA VEB = 4V ON CHARACTERISTICS (Note 8) — 80 Static Forward Current Transfer Ratio 80 hFE — 250 IC = 1mA, VCE = 5V — IC = 10mA, VCE = 5V 30 — V IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 50mA, VCE = 5V Collector-Emitter Saturation Voltage VCE(SAT) — — 0.15 0.20 Base-Emitter Saturation Voltage VBE(SAT) — — 1.0 V Transition Frequency fT 100 — 300 MHz Output Capacitance SMALL SIGNAL CHARACTERISTICS IC = 10mA, VCE = 10V, f = 100MHz Cobo — — 6 pF VCB = 10V, IE = 0, f = 1MHz Small Signal Current Gain hfe 50 — 200 — VCB = 10V, IC = 1mA, f = 1kHz Noise Figure NF — — 8 dB VCB = 5V, IC = 200µA, RS = 1kΩ, f = 1kHz 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. Note: IC, COLLECTOR CURRENT (mA) Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) IB = 10mA IB = 8mA IB = 6mA IB = 4mA IB = 2mA 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. Fig.12 Typical Collector Current vs. Collector-Emitter Voltage Voltage DXT5551 Document number: DS31225 Rev. 4 - 2 3 of 6 www.diodes.com Fig.2 Typical DC Current Gain vs. Collector Current April 2017 © Diodes Incorporated VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) DXT5551 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig.4 Typical Fig. 5 TypicalBase-Emitter Base-EmitterTurn-On Turn-OnVoltage Voltagevs. vs.Collector CollectorCurrent Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Fig. 4Typical Typical Collector-Emitter Collector-Emitter Saturation Saturation Voltage Voltage vs. Fig.3 vs. Collector Current 1.2 f = 1MHz 1.0 0.8 Cibo 0.6 0.4 0.2 Cobo 0 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig.5 Base-Emitter Saturation Voltage vs. Fig. Typical 6 Typical Base-Emitter Saturation Voltage Collector Current vs. Collector Current 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) Fig.67 Typical Capacitance Characteristics Fig. 100 VCE = 10V f = 100MHz Fig. 8Typical TypicalGain-Bandwidth Gain-BandwidthProduct Productvs. vs.Collector CollectorCurrent Current Fig.7 DXT5551 Document number: DS31225 Rev. 4 - 2 4 of 6 www.diodes.com April 2017 © Diodes Incorporated DXT5551 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT89 D1 0 .20 R0 c SOT89 Dim Min Max Typ A 1.40 1.60 1.50 B 0.50 0.62 0.56 B1 0.42 0.54 0.48 c 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.62 1.83 1.733 D2 1.61 1.81 1.71 E 2.40 2.60 2.50 E2 2.05 2.35 2.20 e 1.50 H 3.95 4.25 4.10 H1 2.63 2.93 2.78 L 0.90 1.20 1.05 L1 0.327 0.527 0.427 z 0.20 0.40 0.30 All Dimensions in mm H E B1 L B e D2 8° (4 X ) H1 E2 A L1 D z Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT89 X2 Dimensions Y3 Y1 Y4 X Y C G X X1 X2 Y Y1 Y2 Y3 Y4 G Y2 Value (in mm) 1.500 0.244 0.580 0.760 1.933 1.730 3.030 1.500 0.770 4.530 X1 C DXT5551 Document number: DS31225 Rev. 4 - 2 5 of 6 www.diodes.com April 2017 © Diodes Incorporated DXT5551 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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