AP4N1R1CDT-A
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ 100% Rg & UIS Test
▼ Ultra Low On-resistance
BVDSS
RDS(ON)
ID4
D
45V
1.15mΩ
265A
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP4N1R1C series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The PDFN 5x6 package used advanced package and silicon
combination for ultra low on-resistance and high efficiency,
special for DC-DC converters application and the foot print is
compatible with SO-8 with backside heat sink and lower profile.
D
D
D
PDFN 5x6
D
G
S
S
S
Bottom View
Top View
.
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
Drain Current (Chip), VGS @ 10V
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
4
Total Power Dissipation
3
5
Rating
Units
45
V
+20 / -12
V
265
A
50.6
A
40.5
A
350
A
138.8
W
5
W
256
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Value
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Unit
0.9
℃/W
25
℃/W
1
201605191
AP4N1R1CDT-A
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
45
-
-
V
VGS=10V, ID=20A
-
-
1.15
mΩ
VGS=4.5V, ID=20A
-
-
1.85
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
2
V
gfs
Forward Transconductance
VDS=5V, ID=20A
-
120
-
S
IDSS
Drain-Source Leakage Current
VDS=32V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=20A
-
172
275
nC
Qgs
Gate-Source Charge
VDS=20V
-
30
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
17
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
15
-
ns
tr
Rise Time
ID=30A
-
64
-
ns
td(off)
Turn-off Delay Time
RG=1.6Ω
-
140
-
ns
tf
Fall Time
VGS=10V
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
11600 18560
pF
Coss
Output Capacitance
VDS=20V
-
1330
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3
6
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.3
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
54
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
80
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec; 60 C/W at steady state.
4.Package limitation current is 100A .
5.Starting Tj=25oC , VDD=30V , L=0.5mH , RG=25Ω
.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4N1R1CDT-A
160
320
10V
8.0V
7.0V
6.0V
5.0V
V G = 4.0V
240
T C = 150 o C
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
160
80
120
80
40
0
0
0
0.4
0.8
1.2
1.6
2
0
0
V DS , Drain-to-Source Voltage (V)
1
1
2
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.8
I D =20A
V G =10V
I D = 20 A
o
T C =25 C
1.6
1.6
1.4
.
Normalized RDS(ON)
RDS(ON) (mΩ)
10V
8.0V
7.0V
6.0V
5.0V
V G = 4.0V
1.2
1.2
0.8
1
0.4
2
4
6
8
10
-100
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
2.0
I D =250uA
Normalized VGS(th)
1.6
IS(A)
10
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
0.0
0.1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4N1R1CDT-A
12
I D = 20 A
V DS =20V
10
12000
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
16000
6
8000
4
4000
2
0
C oss
C rss
0
0
40
80
120
160
200
240
1
11
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
31
41
51
Fig 8. Typical Capacitance Characteristics
1
10us
Operation in this
area limited by
RDS(ON)
100
10
100us
.
1
1ms
10ms
0.1
T C =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthjc)
1000
ID (A)
21
V DS , Drain-to-Source Voltage (V)
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
320
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
160
240
160
Limited by package
120
80
T j =150 o C
80
o
T j =25 C
40
o
T j = -55 C
0
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP4N1R1CDT-A
160
2
I D =1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
120
80
40
0.4
0
0
-100
-50
T
0
j
50
100
150
0
, Junction Temperature ( o C)
50
100
150
o
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
10
T j =25 o C
RDS(ON) (mΩ)
8
6
.
4
2
4.5V
V GS =10V
0
0
20
40
60
80
100
120
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP4N1R1CDT-A
MARKING INFORMATION
Part Number
4N1R1C
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6