Rohm BM81110MUW 12v input multi-channel system power supply ic Datasheet

Datasheet
Power supply IC series for TFT-LCD panels
12V Input Multi-Channel
System Power Supply IC
BM81110MUW
General Description
BM81110MUW is a system power supply for TFT-LCD
panels used for liquid crystal TVs. This IC is
incorporated with Negative and Positive charge pump
controllers and Gate Pulse Modulation (GPM) function. It
also features built-in EEPROM to contain each setting
voltage, soft start time, etc.
Key Specifications
 Input voltage range:
 AVDD Output voltage range:
 VIO Output voltage range:
 VCORE Output voltage range:
 HAVDD Output voltage range:
 VGH Output voltage range:
 VGL Output voltage range:
 Switching Frequency:
Features
■ Step-up DC/DC converter (AVDD)
(Synchronous rectification, built-in load switch)
■ Step-down DC/DC converter 1 (VIO)
(Non-synchronous rectification)
■ Step-down DC/DC converter 2 (VCORE)
(Synchronous rectification)
■ Step-down DC/DC converter 3 (HAVDD)
(Synchronous rectification)
■ Positive charge pump controller (VGH)
■ Negative charge pump controller (VGL)
■ Gate Pulse Modulation (GPM) function
■ Output voltage control by I2C
■ Built-in EEPROM
■ Switching Frequency 750kHz (AVDD, VIO)
■ Switching Frequency 1MHz (VCORE, HAVDD)
 Operating temperature range:
Package
VQFN40W6060A
8.6V to 14.7V
13.5V to 19.8V
2.2V to 3.7V
0.8V to 3.3V
4.8V to 11.1V
20V to 35V
-14.5V to -5.5V
750kHz(Typ)
1MHz(Typ)
-40℃ to +85℃
W(Typ) x D(Typ) x H(Max)
6.00mm x 6.00mm x 0.8mm
Applications
■ TFT-LCD panel
Typical Application Circuit(TOP VIEW)
SW
VGH
AVDD
VIN
HAVDD
DRVN
VGH
DRVP
RE
VGHM
N.C.
VINB3
SWB3
VDD3
PGND3
SWB1
EN
PGND2
VCORE
VGL
VGL
N.C.
SWB2
SWO
VDD2
SWI
CTRL
AVDD
VIN
SW
BM81110MUW
COMP
AGND
AVIN
HVS
A0
NTC
N.C.
SCL
PGND
SWB1
SDA
PGND
SWB1
FAULT
VDD1
VINB1
SW
VINB1
VIO
VINB2
VL
Θ
VIN
Figure1. Application Circuit
○Product structure:Silicon monolithic chip ○This chip
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has no designed
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protection against radioactive rays.
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Contents
General Description ........................................................................................................................................................................ 1
Features.......................................................................................................................................................................................... 1
Applications .................................................................................................................................................................................... 1
Typical Application Circuit ............................................................................................................................................................... 1
Key Specifications........................................................................................................................................................................... 1
Package
.................................................................................................................................................................................. 1
Pin Configuration
......................................................................................................................................................................... 3
Block Diagram (VGH Doubler) ........................................................................................................................................................ 4
Block Diagram (VGH Trippler) ........................................................................................................................................................ 5
Description of each Block ............................................................................................................................................................... 6
Absolute Maximum Ratings ............................................................................................................................................................ 7
Recommended Operating Conditions
Electrical Characteristics
......................................................................................................................................... 7
............................................................................................................................................................. 8
Typical Performance Curves
..................................................................................................................................................... 11
Timing Chart ................................................................................................................................................................................. 21
Example Application(VGH Doubler) ......................................................................................................................................... 22
Example Application(VGH Trippler) .......................................................................................................................................... 23
Protection function explanation of each block ............................................................................................................................... 24
Protection function list ................................................................................................................................................................... 26
Upper limit voltage setting of VGH thermal compensation ............................................................................................................ 27
FAULT function ............................................................................................................................................................................. 27
Serial transmission ....................................................................................................................................................................... 28
Register Map ................................................................................................................................................................................ 31
Command Table ............................................................................................................................................................................ 32
Selecting Application Components ............................................................................................................................................... 33
Layout Guideline ............................................................................................................................................................................. 38
Power Dissipation ......................................................................................................................................................................... 38
I/O Equivalence Circuit ................................................................................................................................................................. 39
Operational Notes ......................................................................................................................................................................... 42
Ordering Information ..................................................................................................................................................................... 44
Marking Diagram .......................................................................................................................................................................... 44
Physical Dimension Tape and Reel Information ............................................................................................................................ 45
Revision History ............................................................................................................................................................................ 46
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PGND3
SWB3
N.C.
VINB3
RE
VGHM
VGH
DRVP
DRVN
(TOP View)
VDD3
Pin Configuration
30
29
28
27
26
25
24
23
22
21
EN
31
20
VGL
PGND2
32
19
N.C.
SWB2
33
18
SWO
VDD2
34
17
SWI
CTRL
35
16
SW
Thermal Pad
38
13
PGND
SWB1
39
12
NTC
N.C.
40
11
VL
2
3
4
5
6
7
8
9
10
COMP
1
AGND
SWB1
AVIN
PGND
HVS
14
A0
37
SCL
VDD1
SDA
SW
FAULT
15
VINB1
36
VINB1
VINB2
Figure 2. Pin Configuration
Pin Description
PIN No.
SYMBOL
FUNCTION
PIN No.
SYMBOL
FUNCTION
1
VINB1
Step-down DC/DC power supply input 1
21
DRVN
Negative charge pump drive pin
2
VINB1
Step-down DC/DC power supply input 1
22
DRVP
Positive charge pump drive pin
3
FAULT
FAULT signal output
23
VGH
Positive charge pump output
4
SDA
Serial data input
24
VGHM
GPM output
5
SCL
Serial clock input
25
RE
GPM Slope adjustment pin
6
A0
I2C address select pin
26
VINB3
Step-down DC/DC power supply input 3
7
HVS
HVS mode select pin
27
N.C.
―
8
AVIN
Power supply input
28
SWB3
Step-down DC/DC switching pin 3
9
AGND
Analog ground
29
PGND3
Step-down DC/DC ground 3
10
COMP
Error amplifier output
30
VDD3
Step-down DC/DC output 3
11
VL
Internal REG output
31
EN
Enable input
12
NTC
Thermistor connecting pin
32
PGND2
Step-down DC/DC ground 2
13
PGND
Step-up DC/DC ground
33
SWB2
Step-down DC/DC switching pin 2
14
PGND
Step-up DC/DC ground
34
VDD2
Step-down DC/DC output 2
15
SW
Step-up DC/DC switching pin
35
CTRL
GPM control pin
16
SW
Step-up DC/DC switching pin
36
VINB2
Step-down DC/DC power supply input 2
17
SWI
Load switch input
37
VDD1
Step-down DC/DC output 1
18
SWO
Load switch output
38
SWB1
Step-down DC/DC switching pin 1
19
N.C.
―
39
SWB1
Step-down DC/DC switching pin 1
20
VGL
Negative charge pump output
40
N.C.
―
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BM81110MUW
Block Diagram (VGH Doubler)
COMP
AVDD
SWO
BOOST
CONVERTER
SWI
VIN
SW
VIN
PGND
AVIN
INTERNAL
REGULATOR
VIN
VINB1
VL
BUCK
CONVERTER 1
SWB1
VIO
EEPROM
VDD1
VINB2
SDA
SCL
I2C
INTERFACE
A0
BUCK
CONVERTER 2
DAC
VCORE
SWB2
PGND2
HVS
VDD2
SEQUENCE
CONTROL
EN
VIN
VINB3
BUCK
CONVERTER 3
FAULT
SWB3
HAVDD
PGND3
VDD3
VGH
REGULATOR
DRVP
AVDD
SW
VGH
VGH
VL
NTC
Θ
VGL
GPM
VGHM
RE
AGND
VGL
DRVN
CTRL
VGL
SWB1
Figure 3. Block Diagram (VGH Doubler)
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Block Diagram (VGH Trippler)
COMP
AVDD
SWO
BOOST
CONVERTER
SWI
VIN
SW
VIN
PGND
AVIN
INTERNAL
REGULATOR
VIN
VINB1
VL
BUCK
CONVERTER 1
SWB1
VIO
EEPROM
VDD1
VINB2
SDA
SCL
I2C
INTERFACE
A0
BUCK
CONVERTER 2
DAC
VCORE
SWB2
PGND2
HVS
VDD2
SEQUENCE
CONTROL
EN
VIN
VINB3
BUCK
CONVERTER 3
FAULT
SWB3
HAVDD
PGND3
AVDD
VDD3
VGH
REGULATOR
DRVP
SW
SW
VGH
VGH
VL
NTC
Θ
VGL
GPM
VGHM
RE
AGND
VGL
DRVN
CTRL
VGL
SWB1
Figure 4. Block Diagram (VGH Trippler)
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Description of each Block
① BUCK CONVERTER BLOCK 1
This block generates VIO (VDD1) voltage from Power supply voltage.
After releasing UVLO of VIN, VL starts activating. After Auto Read is operated to EEPROM, VIO will be activated.
Power on Reset works at the time of VIN startup and the setting written to EEPROM will be reflected in Register.
During operation, it is possible to prevent destruction of IC by OVP, UVP and OCP protection functions.
② BUCK CONVERTER BLOCK 2
This block generates VCORE (VDD2) voltage from Power supply voltage of VIO.
After completing VIO start-up, VCORE starts activating.
Power on Reset works at the time of VIN startup and the setting written to EEPROM will be reflected in Register.
During operation, it is possible to prevent destruction of IC by OVP, UVP and OCP protection functions.
③ VGL REGULATOR BLOCK
This block generates VGL voltage.
After completing VCORE start-up, VGL starts activating.
Power on Reset works at the time of VIN startup and the setting written to EEPROM will be reflected in Register.
During operation, it is possible to prevent destruction of IC by UVP and OCP protection functions.
④ BOOST CONVERTER BLOCK
This block generates AVDD (SWO) voltage from Power supply voltage.
It activates when EN=H, and under condition where VIO and VGL are active.
Power on Reset works at the time of VIN startup and the setting written to EEPROM will be reflected in Register.
During operation, it is possible to prevent destruction of IC by OVP, UVP and OCP protection functions.
⑤ BUCK CONVERTER BLOCK 3
This block generates HAVDD (VDD3) voltage from Power supply voltage.
HAVDD starts up following AVDD output voltage.
The setting voltage range of the HAVDD voltage depends on the AVDD setting voltage, and the lower limit level of the
HAVDD voltage is limited to AVDD×0.4.
Power on Reset works at the time of VIN startup and the setting written to EEPROM will be reflected in Register.
During operation, it is possible to prevent destruction of IC by OVP, UVP and OCP protection functions.
⑥ VGH REGULATOR BLOCK
This block generates VGH voltage from AVDD voltage.
After completing AVDD star-up, VGH starts activating.
Power on Reset works at the time of VIN startup and the setting written to EEPROM will be reflected in Register.
During operation, it is possible to prevent destruction of IC by OVP, UVP and OCP protection functions.
⑦ GPM BLOCK
This is a switching circuit to drive a gate voltage for TFT consisted of PMOS FET.
VGHM output synchronizes with CTRL input and outputs High voltage = VGH at CTRL=H.
GPM Falling Limit voltage can be controlled by EEPROM.
※ Caution
・EN Input tolerant function is built-in. No need to be always EN < VIN.
・When FAULT pin is not used, FAULT pin must be connected to GND, or it should be open.
・When NTC pin is not used, NTC pin must be connected to GND.
・When HVS pin is not used, HVS pin must be connected to GND.
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Absolute Maximum Ratings
Limits
Parameter
Symbol
Unit
MIN
TYP
MAX
AVIN, VINB1, VINB3
-0.3
-
24
V
VINB2
-0.3
-
7
V
SDA, SCL, A0, HVS,
NTC, EN, CTRL
-0.3
-
7
V
VL
-0.3
-
6.5
V
-0.3
-
7
V
-0.3
-
24
V
VGL, DRVN
-15
-
7
V
DRVP, VGH, VGHM, RE
-0.3
-
40
V
Ta
-40
-
85
℃
Tstg
-55
-
150
℃
-
-
150
℃
Supply Voltage
Input Voltage
COMP, FAULT
VDD2, SWB2
SW, SWI, SWO,
VDD1, SWB1, VDD3, SWB3
Output Voltage
Operating Ambient
Temperature Range
Storage Temperature
Range
Maximum Continuous
Junction Temperature
Power Dissipation
*1
*2
Tjmax
(*1)
Pd
3.20
W
θja
39.1
degC/W
(*2)
It shows junction temperature when stores.
Derate by 25.6mW/℃ at Ta>25℃ when mounted on 4-layer 114.3mm×74.2mm×1.6mm glass epoxy board.
Recommended Operating Conditions
(Ta=-40℃~85℃)
Limits
Parameter
Symbol
Unit
MIN
TYP
MAX
AVIN
8.6
-
14.7
V
EN, A0, HVS, CTRL
-0.1
-
5.5
V
2 wire serial pin voltage
SDA, SCL
-0.1
-
5.5
V
2 wire serial frequency
FCLK
-
-
400
kHz
Supply Voltage
Functional pin voltage
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TSZ02201-0313AAF00410-1-2
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BM81110MUW
Electrical Characteristics
(Unless otherwise specified, Ta=25℃, AVIN,VINB1,VINB3=12V, VINB2=3.3V)
Parameter
Symbol
Limits
Unit
Condition
MIN
TYP
MAX
8.0
8.3
8.6
V
VIN rising
7.25
7.55
7.85
V
VIN falling
【 GENERAL 】
VIN Under Voltage
Lockout Threshold
VIN_
UVLO
Thermal shutdown
TSD
-
175
-
℃
Internal Oscillator Frequency 1
FOSC1
600
750
900
kHz
AVDD, VIO
Internal Oscillator Frequency 2
FOSC2
800
1000
1200
kHz
VCORE, HAVDD
VL Voltage
VL
4.9
5
5.1
V
Consumption Current
ICC
-
5.0
-
mA
No switching
【 LOGIC SIGNALS SDA, SCL, EN, A0, CTRL, HVS 】
High Level Input Voltage
VIH
2
-
-
V
Low Level Input Voltage
VIL
-
-
0.5
V
Minimum Output Voltage
VSDA
-
-
0.4
V
RLOGIC
140
200
260
kΩ
Pull-Down Resistance
SDA, ISDA=3mA
EN, A0, CTRL, HVS
【 BOOST CONVERTER (AVDD) 】
Output Voltage Range
AVDD
13.5
-
19.8
V
0.1V step
HVS Mode Offset Voltage
VHVS
0
-
3
V
0.2V step
Regulation Voltage
AVDD_R
14.85
15.0
15.15
V
Data:0Fh
Hi-Side Leakage Current
ILK_SWH
-
0
10
uA
SW=0V
RON_SWH
-
100
200
mΩ
ISW=-500mA
ILK_SWL
-
0
10
uA
SW=24V
RON_SWL
-
100
200
mΩ
ISW=500mA
Load SW ON-Resistance
RON_LS
-
100
200
mΩ
ILS=500mA
SW Current Limit
ILIM_SW
4.25
5
5.75
A
L=10uH
SW Current Limit Offset
ILIM_SET
0
-
2.8
A
0.4A step
20.5
21.5
22.5
V
20
-
-
V
-
AVDD
x 0.8
-
V
10
-
20
msec
-
7
-
A
Hi-Side SW ON-Resistance
Lo-Side SW Leakage Current
Lo-Side SW ON-Resistance
Over-Voltage Protection Rise
Over-Voltage Protection Fall
AVDD UVP Detecting Voltage
Soft Start Time
VOVP_AVD
D_RISE
VOVP_AVD
D_FALL
VUVP_
AVDD
TSS_
AVDD
Load Switch Current Limit
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Electrical Characteristics
(Unless otherwise specified, Ta=25℃, AVIN,VINB1,VINB3=12V, VINB2=3.3V)
Parameter
Symbol
Limits
Unit
Condition
MIN
TYP
MAX
VIO
2.2
-
3.7
V
0.1V step
VIO_R
2.45
2.5
2.55
V
Data:03h
-
0
10
uA
SWB1=0V
SWB1=-500mA
【 BUCK CONVERTER 1 (VIO) 】
Output Voltage Range
Regulation Voltage
Hi-Side SWB1 Leak Current
Hi-Side SWB1 ON-Resistance
SWB1 Current Limit
VIO Over-Voltage Protection
VIO UVP Detecting Voltage
Soft Start Time
ILK_
SWB1H
RON_
SWB1H
ILIM_
SWB1
VOVP_
VIO
VUVP_
VIO
-
200
300
mΩ
2.8
3.5
4.2
A
-
V
-
V
TSS_VIO
-
3
-
msec
VIO=3.0V
VCORE
0.8
-
3.3
V
0.1V step
VCORE_R
0.98
1.0
1.02
V
Data:02h
-
0
10
uA
SWB2=0V
-
175
300
mΩ
SWB2=-500mA
-
0
10
uA
SWB2=7V
-
175
300
mΩ
SWB2=500mA
2.0
3.0
4.0
A
-
V
-
V
Frequency 1/4
VCORE=2.0V
-
VIO
x 1.1
VIO
x 0.8
L=10uH
Frequency 1/4
【 BUCK CONVERTER 2 (VCORE) 】
Output Voltage Range
Regulation Voltage
Hi-Side SWB2 Leak Current
Hi-Side SWB2 ON-Resistance
Lo-Side SWB2 Leak Current
Lo-Side SWB2 ON-Resistance
SWB2 Current Limit
VCORE Over-Voltage
Protection
VCORE UVP Detecting Voltage
Soft Start Time
ILK_
SWB2H
RON_
SWB2H
ILK_
SWB2L
RON_
SWB2L
ILIM_
SWB2
VOVP_
VCORE
VUVP_
VCORE
TSS_
VCORE
-
VCORE
x 1.1
VCORE
x 0.8
L=10uH
-
4
-
msec
HAVDD
4.8
-
11.1
V
0.1V step
HAVDD_R
7.3875
7.5
7.6125
V
Data:1Bh
-
0
10
uA
SWB3=0V
-
300
500
mΩ
SWB3=-500mA
-
0
10
uA
SWB3=24V
-
300
500
mΩ
SWB3=500mA
1.0
1.5
2.0
A
-
V
-
V
【 BUCK CONVERTER 3 (HAVDD) 】
Output Voltage Range
Regulation Voltage
Hi-Side SWB3 Leak Current
Hi-Side SWB3 ON-Resistance
Lo-Side SWB3 Leak Current
Lo-Side SWB3 ON-Resistance
SWB3 Current Limit
HAVDD Over-Voltage
Protection
HAVDD UVP Detecting Voltage
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TSZ22111 • 15 • 001
ILK_
SWB3H
RON_
SWB3H
ILK_
SWB3L
RON_
SWB3L
ILIM_
SWB3
VOVP_
HAVDD
VUVP_
HAVDD
-
HAVDD
x 1.1
HAVDD
x 0.8
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L=10uH
Frequency 1/4
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Electrical Characteristics
(Unless otherwise specified, Ta=25℃, AVIN,VINB1,VINB3=12V, VINB2=3.3V)
Parameter
Symbol
Limits
Unit
Condition
MIN
TYP
MAX
VGH
20
-
35
V
1V step
VGH_R
26.6
28
29.4
V
Data:08h
Io=5mA
VGHH_O
0
-
15
V
5
-
-
mA
-
VGH
x 0.8
-
V
36
38
40
V
TSS_VGH
-
7
-
msec
VGH=28V
VGL
-14.5
-
-5.5
V
0.6V step
VGL_R
-8.0975
-7.9
-7.7025
V
Data:04h
Io=5mA
5
-
-
mA
-
VGL×0.8
-
V
TDLY_VGL
-
2.5
-
msec
R_DRVN
-
100
-
kΩ
【 VGH REGULATOR 】
Output Voltage Range
Regulation Voltage
VGH_H Offset Voltage
Over-Current Protection
VGH UVP Detecting Voltage
VGH Over-Voltage Protection
Soft Start Time
ILIM_
DRVP
VUVP_
VGH
VOVP_
VGH
【 VGL REGULATOR 】
Output Voltage Range
Regulation Voltage
Over-Current Protection
VGL UVP Detecting Voltage
Delay Time
DRVN Internal Register
ILIM_
DRVN
VUVP_
VGL
【 GATE PULSE MODULATION (GPM) 】
VGH-VGHM ON-Resistance
RGHH
-
3
5
Ω
RE-VGHM ON-Resistance
RGHL
-
3
-
Ω
Propagation Delay
TGPM
150
250
350
nsec
○This product has no designed protection against radioactive rays.
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BM81110MUW
Typical Performance Curves
(Unless otherwise specified, Ta=25℃, AVIN,VINB1,VINB3=12V, VINB2=3.3V, VIO=3.3V,
VCORE=1.8V, AVDD=17.5V, HAVDD=9.0V, VGH=28V, VGL=-7.9V, RL=no load)
1500
8
Internal Oscillatior Freqency : FOSC [kHz]
7
Input Current : Icc[mA]
6
5
4
3
EN=L
No Switching
2
1
0
5
6
7
8
9
10
11
12
13
14
1200
AVDD,VIO Frequency
1100
1000
900
800
700
VCORE,HAVDD Frequency
600
5
6
7
8
9
10
11
12
13
14
15
Input Voltage : VIN [V]
Figure 5. Input Current vs Input Voltage
(EN=L, no switching)
Figure 6. Internal Oscillator Frequency vs Input Voltage
VIN=12V (20V/Div)
VIO=3.3V (5V/Div)
VIO=3.3V (5V/Div)
VCORE=1.8V (5V/Div)
VCORE=1.8V (5V/Div)
VGH=28V (10V/Div)
VGH=28V (10V/Div)
AVDD=15V (10V/Div)
AVDD=15V (10V/Div)
HAVDD=7.5V (10V/Div)
HAVDD=7.5V (10V/Div)
VGL=-7.9V (10V/Div)
VGL=-7.9V (10V/Div)
VGHM (20V/Div)
VGHM (20V/Div)
10msec/Div
10msec/Div
Figure 8. Power-on 2
(VGL driven AVDD switch node)
Figure 7. Power-on 1
(VGL driven by VIO switch node)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
1300
500
15
Input Voltage : VIN [V]
VIN=12V (20V/Div)
1400
11/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Typical Performance Curves
(Unless otherwise specified, Ta=25 ℃ , AVIN,VINB1,VINB3=12V, VINB2=3.3V, VIO=3.3V,
VCORE=1.8V, AVDD=17.5V, HAVDD=9.0V, VGH=28V, VGL=-7.9V, RL=no load)
3
100
90
2
70
Output Voltage [%]
Efficiency [%]
80
60
50
40
VIN=12V
VIO=3.3V
30
1
0
-1
VIN=12V
VIO=3.3V
20
-2
10
-3
0
0
200
400
600
800
1000
1200
1400
0
200
400
600
800
1000
Output Current [mA]
Output Current [mA]
Figure 9. VIO Efficiency vs Output Current
Figure 10. VIO Output Voltage vs Output Current
VIO (10mV/Div AC)
VIO (100mV/Div AC)
ΔV:6.3mV
SWB1 (10V/Div)
ISWB1 (500mA/Div)
IOUT=500mA
IOUT=100mA
IOUT (500mA/Div)
IOUT (500mA/Div)
1usec/Div
50usec/Div
Figure 12. VIO Switching
(Output Current=500mA)
Figure 11. VIO Load Transient
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
12/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Typical Performance Curves
(Unless otherwise specified, Ta=25 ℃ , AVIN,VINB1,VINB3=12V, VINB2=3.3V, VIO=3.3V,
VCORE=1.8V, AVDD=17.5V, HAVDD=9.0V, VGH=28V, VGL=-7.9V, RL=no load)
3
100
90
2
70
Output Voltage [%]
Efficiency [%]
80
60
50
40
VIN=12V
VIO=3.3V
VCORE=1.8V
30
20
1
0
-1
VIN=12V
VIO=3.3V
VCORE=1.8V
-2
10
-3
0
0
200
400
600
800
1000
1200
0
1400
200
400
600
800
1000
Output Current [mA]
Output Current [mA]
Figure 13. VCORE Efficiency vs Output Current
Figure 14. VCORE Output Voltage vs Output Current
VCORE (10mV/Div AC)
VCORE (100mV/Div AC)
ΔV:5.2mV
SWB2 (5V/Div)
IOUT=300mA
ISWB2 (500mA/Div)
IOUT=10mA
IOUT (500mA/Div)
IOUT (200mA/Div)
1usec/Div
50usec/Div
Figure 16. VCORE Switching
(Output Current=500mA)
Figure 15. VCORE Load Transient
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
13/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Typical Performance Curves
(Unless otherwise specified, Ta=25 ℃ , AVIN,VINB1,VINB3=12V, VINB2=3.3V, VIO=3.3V,
VCORE=1.8V, AVDD=17.5V, HAVDD=9.0V, VGH=28V, VGL=-7.9V, RL=no load)
3
100
90
2
70
Output Voltage [%]
Efficiency [%]
80
60
50
40
VIN=12V
AVDD=17.5V
HAVDD=9.0V
(source)
30
20
1
0
-1
VIN=12V
AVDD=17.5V
HAVDD=9.0V
(source)
-2
10
-3
0
0
200
400
600
800
1000
1200
0
1400
200
400
600
800
1000
Output Current [mA]
Output Current [mA]
Figure 17. HAVDD Efficiency vs Output Current (source)
Figure 18. HAVDD Output Voltage vs Output Current (source)
HAVDD (10mV/Div AC)
HAVDD (100mV/Div AC)
ΔV:6.8mV
SWB3 (10V/Div)
IOUT=350mA
ISWB3 (500mA/Div)
IOUT=0mA
IOUT (500mA/Div)
IOUT (300mA/Div)
1usec/Div
200usec/Div
Figure 20. HAVDD Switching (source)
(Output Current=500mA)
Figure 19. HAVDD Load Transient (source)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
14/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Typical Performance Curves
(Unless otherwise specified, Ta=25 ℃ , AVIN,VINB1,VINB3=12V, VINB2=3.3V, VIO=3.3V,
VCORE=1.8V, AVDD=17.5V, HAVDD=9.0V, VGH=28V, VGL=-7.9V, RL=no load)
3
100
90
2
70
Output Voltage [%]
Efficiency [%]
80
60
50
40
VIN=12V
AVDD=17.5V
HAVDD=9.0V
(sink)
30
20
1
0
-1
VIN=12V
AVDD=17.5V
HAVDD=9.0V
(sink)
-2
10
-3
0
0
200
400
600
800
1000
1200
0
1400
200
400
600
800
1000
Output Currnet [mA]
Output Current [mA]
Figure 21. HAVDD Efficiency vs Output Current (sink)
Figure 22. HAVDD Output Voltage vs Output Current (sink)
HAVDD (10mV/Div AC)
ΔV:9.4mV
HAVDD (100mV/Div AC)
SWB3 (10V/Div)
ISWB3 (500mA/Div)
IOUT (300mA/Div)
IOUT=0mA
IOUT=350mA
IOUT (500mA/Div)
1usec/Div
200usec/Div
Figure 24. HAVDD Switching (sink)
(Output Current=500mA)
Figure 23. HAVDD Load Transient (sink)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
15/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Typical Performance Curves
(Unless otherwise specified, Ta=25 ℃ , AVIN,VINB1,VINB3=12V, VINB2=3.3V, VIO=3.3V,
VCORE=1.8V, AVDD=17.5V, HAVDD=9.0V, VGH=28V, VGL=-7.9V, RL=no load)
3
100
90
2
70
Output Voltage [%]
Efficiency [%]
80
60
50
40
VIN=12V
AVDD=17.5V
30
1
0
-1
VIN=12V
AVDD=17.5V
20
-2
10
-3
0
0
200
400
600
800
1000
1200
0
1400
200
400
600
800
1000
Output Current [mA]
Output Current [mA]
Figure 25. AVDD Efficiency vs Output Current
Figure 26. AVDD Output Voltage vs Output Current
AVDD (10mV/Div AC)
AVDD (200mV/Div AC)
ΔV:12.9mV
SW (10V/Div)
IOUT=500mA
ISW (1A/Div)
IOUT=100mA
IOUT (500mA/Div)
IOUT (500mA/Div)
50usec/Div
1usec/Div
Figure 28. AVDD Switching
(Output Current=500mA)
Figure 27. AVDD Load Transient
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
16/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Typical Performance Curves
(Unless otherwise specified, Ta=25 ℃ , AVIN,VINB1,VINB3=12V, VINB2=3.3V, VIO=3.3V,
VCORE=1.8V, AVDD=17.5V, HAVDD=9.0V, VGH=28V, VGL=-7.9V, RL=no load)
3
VGH (200mV/Div AC)
Output Voltage [%]
2
IOUT=50mA
IOUT=10mA
1
0
-1
VIN=12V
AVDD=17.5V
VGH=28V
IOUT (50mA/Div)
-2
-3
200usec/Div
10
30
50
70
90
110
130
150
Output Current [mA]
Figure 29. VGH Load Transient
Figure 30. VGH Output Voltage vs Output Current
VGH (20mV/Div AC)
ΔV:14.4mV
SW (10V/Div)
IOUT=50mA
IOUT (50mA/Div)
5usec/Div
Figure 31. VGH Ripple Voltage
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
17/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Typical Performance Curves
(Unless otherwise specified, Ta=25 ℃ , AVIN,VINB1,VINB3=12V, VINB2=3.3V, VIO=3.3V,
VCORE=1.8V, AVDD=17.5V, HAVDD=9.0V, VGH=28V, VGL=-7.9V, RL=no load)
40
VIN=12V
AVDD=17.5V
VGH=20V
Output Voltage [V]
35
VL 5V
30
100[kΩ]
NTC
25
390[kΩ]
10[kΩ]
NCP18XH103F03RB
Θ
20
15
-30
-20
-10
0
10
20
30
Temperature [℃]
Figure 32. VGH Voltage vs Ta
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
18/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Typical Performance Curves
(Unless otherwise specified, Ta=25 ℃ , AVIN,VINB1,VINB3=12V, VINB2=3.3V, VIO=3.3V,
VCORE=1.8V, AVDD=17.5V, HAVDD=9.0V, VGH=28V, VGL=-7.9V, RL=no load)
3
VGL (100mV/Div AC)
Output Voltage [%]
2
IOUT=50mA
IOUT=10mA
1
0
-1
VIN=12V
VGL=-7.9V
IOUT (50mA/Div)
-2
-3
200usec/Div
10
30
50
70
90
110
130
150
Output Current [mA]
Figure 34. VGL Output Voltage vs Output Current
Figure 33. VGL Load Transient
ΔV:17.8mV
SWB1 (10V/Div)
IOUT=50mA
IOUT (50mA/Div)
5usec/Div
Figure 35. VGL Ripple Voltage
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
19/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Typical Performance Curves
(Unless otherwise specified, Ta=25 ℃ , AVIN,VINB1,VINB3=12V, VINB2=3.3V, VIO=3.3V,
VCORE=1.8V, AVDD=17.5V, HAVDD=9.0V, VGH=28V, VGL=-7.9V, RL=no load)
CTRL (5V/Div)
CTRL (5V/Div)
VGHM (5V/Div)
VGHM (5V/Div)
Delay=255nsec
Delay=270nsec
VGH=28V
No Capacitive Load
RE Resister=0Ω
VGH=28V
No Capacitive Load
RE Resister=0Ω
500nsec/Div
500nsec/Div
Figure 37. GPM Propagation Delay (fall)
Figure 36. GPM Propagation Delay (rise)
CTRL (5V/Div)
Clamp Voltage 5V
VGHM (10V/Div)
500usec/Div
Figure 38. GPM Clamp Voltage (5V Clamp)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
20/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Timing Chart
ON and OFF Sequence of this IC are shown below.
VIN_
UVLO
VIN_
UVLO
VIN
VL
VL_
UVLO
TEAR
VIO
TSS_VIO / 3ms
EEPROM
Auto Read
TSS_VCORE / 4ms
VCORE
VGL
VGL
DELAY
(internal)
TDLY_VGL / 2.5ms
EN
TSS_AVDD
TSS_LSW / 10ms
AVDD
HAVDD
Load Swith ON
TSS_VGH / 7ms
VGH
CTRL
VGHM
VGHM = RE
VGHM = VGH
Figure 39. Timing Chart
VL activates with UVLO release of VIN.
It reads EEPROM data by Auto Read operation upon VL activation. (TEAR=2msec)
After Auto Read completion, VIO activates. The Soft Start time of VIO is 3msec if the setting is 3.0V.
After VIO soft-start completion, VCORE activates. The Soft Start time of VCORE is 4msec if the setting is 2.0V.
After VCORE soft-start completion, VGL activates. The Soft Start time of VGL depends on output voltage setting, external
capacitor, etc.
2.5msec after VCORE soft-start completion, Load SW turns ON (10msec) when EN=High then AVDD activates.
The Soft Start time of AVDD can be changed by register setting (10msec or 20msec).
After AVDD started, VGH activates. The Soft Start time of VGH is 7msec if the setting is 28V.
While VGH is active, CTRL rising or falling will be a trigger to activate GPM operation.
When VGHM voltage at CTRL=L reaches the GPM clamp voltage, VGHM output is high impedance.
GPM, VGH, AVDD, and HAVDD shut down when EN=Low. GPM output (VGHM) will be the same potential with RE.
All outputs shut down when a drop in VIN of UVLO is detected. VGHM will be the same potential with VGH.
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
21/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Example Application(TOP VIEW, VGH Doubler)
RFP1
CFP2
CFP1
SW
VGH
AVDD
QP
DFP2
C23
RQP
DFP1
VIN
RQN
QN
HAVDD
L30
C26
C30
R25
DFN2
CFN2
DRVN
VGH
DRVP
RE
N.C.
VINB3
VGHM
EN
SWB3
VDD3
PGND3
SWB1
DFN1
CFN1 RFN1
VGL
VGL
C31
C20
PGND2
VCORE
N.C.
SWB2
AVDD
SWO
D16
L34
VDD2
C34
C18
SWI
C17
CTRL
VIN
SW
BM81110MUW
VINB2
SW
VDD1
PGND
SWB1
PGND
SWB1
NTC
C15
L15
L37
COMP
AGND
AVIN
HVS
A0
SCL
SDA
N.C.
FAULT
D39
VINB1
C37
VINB1
R12_1
VIO
VL
R12_2
C11
RNTC
Θ
VIN
R10
C1
C8
C10
Figure 40. Example Application
Application circuit components list
Parts
name
Value
Company
Parts Number
Parts
name
Value
Company
Parts Number
C1
10 [uF]×2
MURATA
GRM31CB31E106KA75
RQN
100 [kΩ]
ROHM
MCR03
C8
1 [uF]
MURATA
GRM188B31E105KA75
RQP
100 [kΩ]
ROHM
MCR03
R10
75 [kΩ]
ROHM
MCR03
QP
-
ROHM
2SAR513P
C10
470 [pF]
MURATA
GRM188B11H471KA01
CFP2
470 [pF]
MURATA
GRM188B11H471KA01
C11
1 [uF]
MURATA
GRM188B31E105KA75
DFP1
R12_1
100 [kΩ]
ROHM
MCR03
DFP2
-
ROHM
RB558W
R12_2
390 [kΩ]
ROHM
MCR03
CFP1
0.47 [uF]
MURATA
GRM188B31E474KA75
RNTC
10 [kΩ]
MURATA
NCP18XH103F03RB
RFP1
2.2 [Ω]
ROHM
MCR15
L15
10 [uH]
TAIYO YUDEN
NS10165T100MNA
C23
4.7 [uF]×2
MURATA
GRM31CB31H475KA12
C15
10 [uF]×2
MURATA
GRM31CB31E106KA75
R25
300 [Ω]
ROHM
MCR03
D16
-
ROHM
RB080L-30TE25
C26
10 [uF]
MURATA
GRM31CB31E106KA75
C17
10 [uF]×2
MURATA
GRM31CB31E106KA75
L30
10[uH]
TAIYO YUDEN
NRS8040T100M
C18
10 [uF]×4
MURATA
GRM31CB31E106KA75
C30
10 [uF]×2
MURATA
GRM31CB31E106KA75
C20
4.7 [uF]×2
MURATA
GRM219B31C475KE15
C31
0.1 [uF]
MURATA
GRM152B30J104KE19
-
ROHM
RB558W
L34
10[uH]
TAIYO YUDEN
NRS8040T100M
C34
10 [uF]×2
MURATA
GRM21BB31A106KE18
CFN1
0.47 [uF]
MURATA
GRM188B31E474KA75
L37
10[uH]
TAIYO YUDEN
NRS8040T100M
RFN1
2.2 [Ω]
ROHM
MCR15
C37
10 [uF]×3
MURATA
GRM21BB31A106KE18
CFN2
0.22 [uF]
MURATA
GRM188B31E224KA87
D39
-
ROHM
RSX301L-30
QN
-
ROHM
2SCR513P
DFN1
DFN2
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
22/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Example Application(TOP VIEW, VGH Trippler)
SW
CFP1 RFP1
SW
CFP4 RFP2
CFP3
VGH
AVDD
QP
DFP2
C23
DFP1
DFP4
RQP
DFP3
VIN
RQN
QN
HAVDD
L30
C26
C30
R25
DFN2
CFN2
DRVN
VGH
DRVP
RE
N.C.
VINB3
VGHM
EN
SWB3
VDD3
PGND3
SWB1
DFN1
CFN1 RFN1
VGL
VGL
C31
C20
PGND2
VCORE
N.C.
SWB2
AVDD
SWO
D16
L34
VDD2
C34
C18
SWI
C17
CTRL
VIN
SW
BM81110MUW
VINB2
SW
VDD1
PGND
SWB1
PGND
SWB1
NTC
C15
L15
L37
COMP
AGND
AVIN
HVS
A0
SCL
SDA
N.C.
FAULT
D39
VINB1
C37
VINB1
R12_1
VIO
VL
R12_2
C11
RNTC
Θ
VIN
R10
C1
C8
C10
Figure 41. Example Application
Application circuit components list
Parts
name
Value
Company
Parts Number
Parts
name
C1
10 [uF]×2
MURATA
GRM31CB31E106KA75
QP
-
ROHM
2SAR513P
C8
1 [uF]
MURATA
GRM188B31E105KA75
CFP1
0.1 [uF]
MURATA
GRM188B31E104KA75
R10
75 [kΩ]
ROHM
MCR03
RFP1
2.2 [Ω]
ROHM
MCR15
C10
470 [pF]
MURATA
GRM188B11H471KA01
DFP1
C11
1 [uF]
MURATA
GRM188B31E105KA75
DFP2
-
ROHM
RB558W
R12_1
100 [kΩ]
ROHM
MCR03
DFP3
R12_2
390 [kΩ]
ROHM
MCR03
DFP4
-
ROHM
RB558W
RNTC
10 [kΩ]
MURATA
NCP18XH103F03RB
CFP3
1[uF]
MURATA
GRM21BB31H105KA12
L15
10 [uH]
TAIYO YUDEN
NS10165T100MNA
RFP2
2.2 [Ω]
ROHM
MCR15
C15
10 [uF]×2
MURATA
GRM31CB31E106KA75
CFP4
0.1 [uF]
MURATA
GRM188B31E104KA75
D16
-
ROHM
RB080L-30TE25
C23
4.7 [uF]×2
MURATA
GRM31CB31H475KA12
C17
Value
Company
Parts Number
10 [uF]×2
MURATA
GRM31CB31E106KA75
R25
300 [Ω]
ROHM
MCR03
C18
10 [uF]×4
MURATA
GRM31CB31E106KA75
C26
10 [uF]
MURATA
GRM31CB31E106KA75
C20
4.7 [uF]×2
MURATA
GRM219B31C475KE15
L30
10[uH]
TAIYO YUDEN
NRS8040T100M
-
ROHM
RB558W
C30
10 [uF]×2
MURATA
GRM31CB31E106KA75
C31
0.1 [uF]
MURATA
GRM152B30J104KE19
CFN1
0.47 [uF]
MURATA
GRM188B31E474KA75
L34
10[uH]
TAIYO YUDEN
NRS8040T100M
RFN1
2.2 [Ω]
ROHM
MCR15
C34
10 [uF]×2
MURATA
GRM21BB31A106KE18
CFN2
0.22 [uF]
MURATA
GRM188B31E224KA87
L37
10[uH]
TAIYO YUDEN
NRS8040T100M
QN
-
ROHM
2SCR513P
C37
10 [uF]×3
MURATA
GRM21BB31A106KE18
RQN
100 [kΩ]
ROHM
MCR03
D39
-
ROHM
RSX301L-30
RQP
100 [kΩ]
ROHM
MCR03
DFN1
DFN2
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TSZ02201-0313AAF00410-1-2
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BM81110MUW
Protection function explanation of each block
1.
BUCK CONVERTER BLOCK 1 (VIO)
1-1. Over Voltage Protection (OVP)
OVP function is incorporated to prevent IC or other components from malfunctioning due to rising VIO voltage.
Voltage inputted to VDD1 pin is monitored and if VIO voltage reaches VIO>110%(Typ), it is judged as unusual condition
thus OVP function is operated. If OVP is detected, switching is stopped until OVP release voltage (100%, Typ) falls to VIO
voltage. After OVP is released, switching is re-started.
1-2. Over Current Protection (OCP)
If excessive load current (SWB1 peak current>3.5A, Typ) is present, it limits current to flow to built–in Power MOS by
controlling Switching.
1-3. Under Voltage Protection (UVP)
Timer-latch type output UVP function is built-in.
When the unusual condition (VIO<80%) is detected, SWB1 frequency is divided into 1/4 and UVP timer starts.
If the unusual condition continues up to 10msec (Typ), all output will be latched in shutdown state. Power reset is needed to
remove the latch state and to re-start.
2.
BUCK CONVERTER BLOCK 2 (VCORE)
2-1. Over Voltage Protection (OVP)
OVP function is incorporated to prevent IC or others components from malfunctioning due to rising VCORE voltage.
Voltage inputted to VDD2 pin is monitored and if VCORE voltage reaches VCORE>110%(Typ), it is judged as unusual
condition thus OVP function is operated. If OVP is detected, switching is stopped until OVP release voltage (100%, Typ)
falls to VCORE voltage. After OVP is released, switching is re-started.
2-2. Over Current Protection (OCP)
If excessive load current (SWB2 peak current>3.0A, Typ) is present, it limits current to flow to built–in Power MOS by
controlling Switching.
2-3. Under Voltage Protection (UVP)
Timer-latch type output UVP function is built-in.
When the unusual condition (VCORE<80%) is detected, SWB2 frequency is divided into 1/4 and UVP timer starts.
If the unusual condition continues upto 10msec (Typ), all output will be latched in shutdown state. Power reset is needed to
remove the latch state and to re-start.
3.
VGL REGULATOR BLOCK
3-1. Over Current Protection (OCP)
If excessive load current (I_DRVN>5mA, min.) is present, It controls source current (Base current of NPN Tr ) of DRVN.
3-2. Under Voltage Protection (UVP)
Timer-latch type output UVP function is built-in.
When unusual condition is detected (VGL>80%), the UVP time counter starts. If the unusual condition continues up to
10msec (Typ), all output is latched in shut-down condition. Power reset is needed to cancel the latch state and to re-start.
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TSZ02201-0313AAF00410-1-2
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BM81110MUW
4.
BOOST CONVERTER BLOCK (AVDD)
4-1. Over Voltage Protection (OVP)
OVP function is built in to prevent IC or other components from malfunctioning due to excessive rise in AVDD voltage.
The voltage inputted to SWO pin is being monitored. If the SWO pin voltage becomes 21.5V(Typ), OVP is detected. Once
OVP is detected, switching is stopped. After AVDD voltage falls below OVP detection release voltage 20V(min.), switching
is restarted.
4-2. Over Current Protection (OCP)
If excessive load current over 5A (Typ) of SW peak current is present, OCP limits current to rush to built-in Power MOS by
controlling its output switching.
4-3. Under Voltage Protection (UVP)
Timer-latch type output UVP function is built in.
When an unusual condition is detected (AVDD<80%), UVP timer starts. If the unusual condition continues up to
10msec(Typ), all output is latched in shut-down condition. Power reset is needed to remove the latch state and to re-start.
4-4. Load Switch Over Current Protection (LSW_OCP)
If excessive load current (7A, Typ) is present, It controls current of load switch.
5.
BUCK CONVERTER BLOCK 3 (HAVDD)
5-1. Over Voltage Protection (OVP)
OVP function is incorporated to prevent IC or other components from malfunctioning due to rising HAVDD voltage.
Voltage inputted to VDD3 pin is being monitored and if HAVDD voltage reaches HAVDD>110% (Typ), it is judged as
unusual condition thus OVP function is operated. If OVP is detected, switching is stopped until OVP release voltage (100%,
Typ) falls to HAVDD voltage. After OVP release, switching is re-started.
5-2. Over Current Protection (OCP)
If excessive load current (SWB3 peak current>1.5A, typ.) is present, it limits current to flow to built–in Power MOS by
controlling Switching.
5-3. Under Voltage Protection (UVP)
Timer-latch type output UVP function is built in.
When the unusual condition (HAVDD<80%) is detected, SWB3 frequency is divided into 1/4 and UVP timer starts.
If the unusual condition continues up to 10msec(Typ), all output will be latched in shutdown state. Power reset is needed to
remove the latch state and to re-start.
6.
VGH REGULATOR BLOCK
6-1. Over Voltage Protection (OVP)
OVP function is incorporated to prevent IC or other components from malfunctioning due to VGH voltage rising.
Voltage inputted to VGH pin is being monitored and if VGH voltage reaches VGH>38V(Typ), it is judged as unusual
condition so that OVP function is operated. If OVP is detected, limit DRVP current until OVP release voltage (35V, Typ) falls
to VGH voltage. After OVP release, the current limiting of the DRVP pin is canceled.
6-2. Over Current Protection (OCP)
If excessive load current (I_DRVP>5mA, min.) is present, it controls sink current (Base current of PNP Tr ) of DRVP.
6-3. Under Voltage Protection (UVP)
Timer-latch type output UVP function is built in.
When an unusual condition is detected (VGH<80%), UVP timer starts. If the unusual condition continues up to 10msec
(Typ), all output is latched in shut-down condition. Power reset is needed to remove the latch state and to re-start.
7.
GENERAL
7-1. Thermal shutdown
All outputs will shut down when the IC temperature exceeds 175℃(typ.). After the temperature falls below 150℃(Typ), the
operation re-starts.
7-2. VIN Under Voltage Lock Out
VIN Under Voltage Lock Out prevents the circuit malfunction below the UVLO voltage. If VIN voltage is below the UVLO
voltage (8.3V / 7.55V), it enters the standby state.
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TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Protection function list
BLOCK
BUCK
CONVERTER
1
BUCK
CONVERTER
2
VGL
REGULATOR
BOOST
CONVERTER
LOAD SW
BUCK
CONVERTER
3
VGH
REGULATOR
VGH
REGULATOR
Protective
Function
Working Condition
Action
Protective removal
OVP
VIO>110%
Stops switching.
VIO<100%
OCP
I_SWB1>3.5A
Controls switching pulse duty to not exceed over current limit.
I_SWB1<3.5A
Frequency becomes 1/4
VIO>80%
UVP
VIO<80%
IC shuts down if UVP status maintains in 10msec.
IC restart
OVP
VCORE>110%
Stops switching.
VCORE<100%
OCP
I_SWB2>3.0A
Controls switching pulse duty to not exceed over current limit.
I_SWB2<3.0A
Frequency becomes 1/4
VCORE>80%
UVP
VCORE<80%
IC shuts down if UVP status maintains in 10msec.
IC restart
OCP
I_DRVN> 5 mA
Limits DRVN current.
I_DRVN< 5 mA
UVP
VGL<80%
IC shuts down if UVP status maintains in 10msec.
IC restart
OVP
SWI>21.5V
Stops switching
SWI<20V
OCP
I_SW>5A
Controls switching pulse duty to not exceed over current limit.
I_SW<5A
UVP
SWO<80%
IC shuts down if UVP status maintains in 10msec.
IC restart
OCP
I_SWO>7.0A
Off the Load Switch.
IC restart
OVP
HAVDD>110%
Stops switching.
HAVDD<100%
OCP
I_SWB3>1.5A
Controls switching pulse duty to not exceed over current limit.
I_SWB3<1.5A
Frequency becomes ¼
HAVDD>80%
UVP
HAVDD<80%
IC shuts down if UVP status maintains in 10msec.
IC restart
OVP
VGH>38V
DRVP current limit to 0mA
VGH<35V
OCP
I_DRVP> 5 mA
Limits DRVP current.
I_DRVP< 5 mA
UVP
VGH<80%
IC shuts down if UVP status maintains in 10msec.
IC restart
TSD
Tj>175℃
IC shuts down
Tj<150℃
UVLO
VIN<7.55V
IC shuts down
VIN>8.3V
GENERAL
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TSZ02201-0313AAF00410-1-2
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BM81110MUW
Upper limit voltage setting of VGH thermal compensation
36
Low Temp setting is
selected.
5V
R12_1
NTC
R12_2
RNTC
(Therminstor)
Θ
VGH Voltage [V]
VL 5V
32
NTC setting is selected.
28
NTC
Setting
Normal Temp setting
is selected.
Low
Temp
Setting
(VGH_H)
Normal
Temp
Setting
(VGH_L)
24
Ta [℃]
Figure 42. VGH thermal compensation
This IC installs the thermal compensation function for VGH voltage. VGH thermal compensation upper limit voltage
(VGH_H) is settable by changing the EEPROM setting.
Thermal gradient setting is possible by the thermistor (R_NTC) connected to NTC pin and the resistor divider
(R_NTC1, R_NTC2).
FAULT function
The FAULT output indicates the status of the protection circuit of this IC.
Because FAULT is an open-drain output, place a pull-up resistor externally.
When the FAULT output will not be used, leave the pin OPEN.
10~220[kΩ]
FAULT
Figure 43. FAULT Terminal
The recommended external pull-up resistance for the FAULT output is 10kΩ to 220kΩ. An external resistance of under
10kΩ can generate an offset voltage during FAULT=L caused by the voltage drop across the internal ON resistance. On the
other hand, an external resistance of more than 220kΩ can interfere with the output during FAULT=H because of leak
current.
The conditions that FAULT terminal becomes Low are as follows.
・If UVLO operates
・If UVP operates
・If TSD operates
When FAULT function is not used, connect NTC pin to GND, or please make it open.
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27/46
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Serial transmission
2
Use I C BUS control for command interface with Host.
Writing or reading by specifying 1 byte Register address besides Slave address.
2
I C BUS slave mode format is shown below.
Slave Address
Write operation Start
Read operation Start
0
1
0
1
0 0 0 0 A0 0 0
Slave Address
R/W A
0
Start
Slave Address
:
:
ACK
:
Register Address
Data
STOP
:
:
:
0
0
Register Address
A
DATA
A
Select Register Address (8bit)
0
8bit DATA
0
Register Address
A
DATA
A
Select Register Address (8bit)
0
8bit DATA
0
R/W A
0 A0
1
0
Stop
Stop
Start condition
Send 7 bit data in all with bit of Read Mode (H) or Write Mode (L).
(MSB First)
A0 is selectable (1/0) with the slave address select pin.
Acknowledge
Sending or receiving data includes acknowledge bit per byte.
If the data is sent or received properly, ‘L’ is sent and received.
If ‘H’ is sent and received, it means there is no Acknowledge.
Use 1 byte select address.
Data byte. Sending and Receiving data (MSB First)
Stop condition
For writing mode from I2C BUS to register, there is Single mode or Multi-mode.
On single mode, write data to one designated register.
On multi-mode, as a start address register specified in the second byte, writing data can be performed continuously, by
entering multiple data.
Single mode or multi-mode setting can be configured by having or not having ‘stop bit’.
①Single Mode Timing Chart
start
Slave Address
Write Ackn
Resister Address
Ackn
Data
Ackn
Stop
SCL
SDA_in
Device_Out
A6
A5
A4
A3
A2
A1
A0
R/W Ackn
R7
R6
R5
R4
R3
R2
R1
R0
Ackn
D7
D6
D5
D4
D3
D2
D1
D0
Ackn
A6
A5
A4
A3
A2
A1
A0
R/W Ackn
R7
R6
R5
R4
R3
R2
R1
R0
Ackn
D7
D6
D5
D4
D3
D2
D1
D0
Ackn
②Multi Mode Timing Chart
start
Slave Address
Write Ackn
Resister Address (Ex.01h)
Ackn
Data (to Resister 01h)
Ackn
Data (to Resister 02h)
Ackn
SCL
SDA_in
Device_Out
・・・
A6
A5
A4
A3
A2
A1
A0
R/W Ackn
R7
R6
R5
R4
R3
R2
R1
R0
Ackn
D7
D6
D5
D4
D3
D2
D1
D0
Ackn
D7
D6
D5
D4
D3
D2
D1
D0
Ackn
・・・
A6
A5
A4
A3
A2
A1
A0
R/W Ackn
R7
R6
R5
R4
R3
R2
R1
R0
Ackn
D7
D6
D5
D4
D3
D2
D1
D0
Ackn
D7
D6
D5
D4
D3
D2
D1
D0
Ackn
・・・
DAC(3) MSbyte.
Data (to
D15-D10
Resisterhave
05h)no meaning
Ackn
Data
DAC(3)
(to Resister
LSbyte.06h)
Ackn
Stop
・・・
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TSZ22111・15・001
・・・
D7
D6
D5
D4
D3
D2
D1
D0
Ackn
D7
D6
D5
D4
D3
D2
D1
D0
Ackn
・・・
D7
D6
D5
D4
D3
D2
D1
D0
Ackn
D7
D6
D5
D4
D3
D2
D1
D0
Ackn
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BM81110MUW
I2C Timing Diagram
tR
tHIGH
tF
70%
SCL
30%
tLOW
tHD: STA
tSU; DAT
tPD
tHD; DAT
70%
SDA
(IN)
30%
tBUF
tDH
70%
SDA
( OUT)
30%
70%
SCL
tHD; STA
tSU; STA
tSU; STO
70%
SDA
30%
tl
S
S: START ビット
P: STOP ビット
P
Figure 44. I2C Timing Diagram
・Timing standard values
Parameter
SCL frequency
SCL high time
SCL low time
Rise Time
Fall Time
Start condition hold time
Start condition setup time
SDA hold time
SDA setup time
Acknowledge delay time
Acknowledge hold time
Stop condition setup time
Bus release time
Noise spike width
Symbol
fSCL
tHIGH
tLOW
tR
tF
tHD;STA
tSU;STA
tHD;DAT
tSU;DAT
tPD
tDH
tSU;STO
tBUF
Tl
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TSZ22111・15・001
MIN
4.0
4.7
4.0
4.7
200
200
4.7
4.7
-
NORMAL MODE
TYP
0.1
0.1
29/46
MAX
100
1.0
0.3
0.9
-
MIN
0.6
1.2
0.6
0.6
100
100
0.6
1.2
-
FAST MODE
TYP
0.1
0.1
MAX
400
0.3
0.3
0.9
-
Unit
kHz
us
us
us
us
us
us
ns
ns
us
us
us
us
us
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Command interface
EEPROM transmission format for data sending and receiving is shown below.
I2C Write format
Slave Address
Start
0
1
0
0
0
R/W A
0 A0
0
Register Address
A
DATA
A
00h to 0Ch
0
N-bytes DATA
0
0
Stop
It can enter further Register from 3 byte by entering data continuously.
DATA after 0Dh is invalid.
Inputted Data reflect to the Register at the ACK output timing.
I2C Read format
1.
Read data from DAC Register
Slave Address
Start
0
Repeated
Start
1
0
Register Address
R/W A
1
0
0
0
0 A0
1
0
A
00h to 0Ch
0
DATA
A
N-bytes DATA
0
0 0 0 0 A0 0
0
Slave Address
R/W A
Stop
EEPROM Write format
Transmission format for Write operation of EEPROM (DAC Register) is shown below.
EEPROM Write format
Start
Slave Address
0
1
0
0
0
Register Address
R/W A
0 A0
0
0
1
1
1
1
1
1
DATA
A
1
1
0
1
X
X
X
X
A
X
X
X
0
Stop
D6 to D0 : Don’t care
Automatic EEPROM Read Function at Start-up
Upon BM81110MUW start-up, a reset signal is generated and each register is initialized.
After VL activation is finished, data which is stored in the EEPROM is copied to the registers.
The automatic EEPROM read function at start-up is further explained by the flow chart below.
VL ACTIVE
EEPROM READ
TRANSFER DATA
REGISTER
START OPERATION
Figure 45. Automatic EEPROM Read Function at Start-up
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TSZ02201-0313AAF00410-1-2
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Content of EEPROM setting
Register
Address
00h
01h
02h
03h
04h
05h
06h
07h
08h
09h
0Ah
0Bh
0Ch
FFh
*1
*2
Bits
Function
Default(*1)
6
6
4
3
1
4
5
6
4
4
2
4
4
8
Channel Disable Register
AVDD output voltage setting[5:0]
AVDD HVS voltage setting[3:0]
AVDD OCP offset setting[2:0]
AVDD soft start time setting[0]
VIO output voltage setting[3:0]
VCORE output voltage setting[4:0]
HAVDD output voltage setting[5:0]
VGH_L output voltage setting[3:0]
VGH_H offset voltage setting[3:0]
GPM clamp voltage setting[1:0]
VGL output voltage setting[3:0]
HAVDD HVS voltage setting[3:0]
Resolution
00h
15.0V [0Fh]
1.0V [05h]
0.0A [00h]
10msec [00h]
2.5V [03h]
1.0V [02h]
7.5V [1Bh]
28V [08h]
4V [04h]
5V [01h]
-7.9V [04h]
0.0V [00h]
Control Register[7:0]
0.1V [13.5V to 19.8V]
0.2V [0V to 3.0V]
0.4A [0A to 2.8A]
10msec [10msec or 20msec]
0.1V [2.2V to 3.7V]
0.1V [0.8V to 3.3V]
0.1V [4.8V to 11.1V]
1V [20V to 35V]
1V [0V to 15V]
5V [5V to 15V]
0.6V [-14.5V to -5.5V]
0.1V [0.0V to 1.5V]
Factory value.
Value of default voltage setting. The Soft start time of each output changes depending on the setting voltage.
Channel Disable Register
Register Address = 00h
[7]
[6]
[5]
[4]
[3]
[2]
[1]
-
-
VCORE
HAVDD
VGH
VGL
GPM
[0]
NTC
0:Enable
1:Disable
Control Register
Register
Address
DATA
[BIN]
Function
FFh
1xxx_xxxx
Write to EEPROM from DAC Register data.
x:Don’t care bit
Register Map
Resister
Address
00h
01h
02h
03h
04h
05h
06h
07h
08h
09h
0Ah
0Bh
0Ch
FFh
D7
D6
D5
D4
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
VCORE
HAVDD
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TSZ22111・15・001
―
―
―
―
―
―
―
―
―
―
D3
D2
D1
D0
VGH
VGL
GPM
NTC
AVDD[5:0]
―
AVDD HVS [3:0]
―
―
AVDD OCP offset[2:0]
―
―
―
―
AVDD SS
―
VIO [3:0]
VCORE [4:0]
HAVDD [5:0]
―
VGH_L [3:0]
―
VGH_H offset [3:0]
―
―
―
GPM clamp [1:0]
―
VGL [3:0]
―
HAVDD HVS [3:0]
( Control Register )
31/46
Default
00h
0Fh
05h
00h
00h
03h
02h
1Bh
08h
04h
01h
04h
00h
―
TSZ02201-0313AAF00410-1-2
2015.08.10 Rev.002
BM81110MUW
Command Table
01
[5:0]
02
[3:0]
DATA
(HEX)
AVDD
[V]
AVDD
HVS
[V]
00
01
02
03
04
05
06
07
08
09
0A
0B
0C
0D
0E
0F
10
11
12
13
14
15
16
17
18
19
1A
1B
1C
1D
1E
1F
20
21
22
23
24
25
26
27
28
29
2A
2B
2C
2D
2E
2F
30
31
32
33
34
35
36
37
38
39
3A
3B
3C
3D
3E
3F
13.5
13.6
13.7
13.8
13.9
14.0
14.1
14.2
14.3
14.4
14.5
14.6
14.7
14.8
14.9
15.0
15.1
15.2
15.3
15.4
15.5
15.6
15.7
15.8
15.9
16.0
16.1
16.2
16.3
16.4
16.5
16.6
16.7
16.8
16.9
17.0
17.1
17.2
17.3
17.4
17.5
17.6
17.7
17.8
17.9
18.0
18.1
18.2
18.3
18.4
18.5
18.6
18.7
18.8
18.9
19.0
19.1
19.2
19.3
19.4
19.5
19.6
19.7
19.8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
03
[2:0]
AVDD
OCP
offset
[A]
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
04
[0]
05
[3:0]
Register Address
06
07
[4:0]
[5:0]
AVDD
soft start
[msec]
VIO
[V]
VCORE
[V]
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
10
20
08
[3:0]
09
[3:0]
0A
[1:0]
0B
[3:0]
0C
[3:0]
HAVDD
[V]
VGH_L
[V]
VGH_H
offset
[V]
GPM
clamp
[V]
VGL
[V]
HAVDD
HVS
[V]
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7.0
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
8.0
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
9.0
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10.0
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
11.0
11.1
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
5
10
15
-5.5
-6.1
-6.7
-7.3
-7.9
-8.5
-9.1
-9.7
-10.3
-10.9
-11.5
-12.1
-12.7
-13.3
-13.9
-14.5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
: Default Value
①
AVDD HVS Voltage Setting (Register Address:02h)
When HVS=High, AVDD becomes AVDD setting voltage + AVDD HVS setting voltage [V].
②
VGH _H offset Voltage Setting (Register Address:09h)
When NTC=High, VGH becomes VGH_L setting voltage + VGH_H offset setting voltage [V].
③
HAVDD HVS Voltage Setting (Register Address:0Ch)
When HVS=High, HAVDD becomes HAVDD setting voltage + HAVDD HVS setting voltage [V].
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Selecting Application Components
1. Buck Converter
1-1. Selecting the Output LC Constant
IL
IOMAX+
⊿IL
should not reach the rated value level.
2
ILR
IOMAXMean current
t
Figure 46. Inductor Current Waveform (Buck Converter)
The output inductance (L) is decided by the rated current (ILR) and maximum input current (IOMAX) of the inductance.
Adjust so that IOMAX + ΔIL / 2 do not reach the rated current value.
ΔIL can be obtained by the following equation.
VO
1
1
ΔIL = L × (VIN - VO) × VIN × f [A]
where f is the switching frequency
Set with sufficient margin because the inductance value may have a dispersion of ±30%.
If the coil current exceeds the rated current (ILR), the IC may be damaged.
1-2. Selecting the Input/Output capacitor
The output capacitor (CO) smoothens the ripple voltage at the output. Select a capacitor that will regulate the output ripple voltage
within the specifications.
Output ripple voltage can be obtained by the following equation.
ΔIL
VO
1
ΔVPP = ΔIL × RESR + 2 Co × VIN × f
However, since the aforementioned conditions are based on a lot of factors, verify the results using the actual product.
Since the peak current flows between the input and output at the DC/DC converter, a capacitor is required to be installed at
the Input side. For this reason, a low ESR capacitor is recommended as an input capacitor with a value more than 10μF
and less than 100mΩ ESR. If an out of range capacitor is selected, the excessive ripple voltage is superimposed on the
input voltage, thus it may cause the malfunction of IC.
However these conditions may vary according to the load current, input voltage, output voltage, inductance and switching
frequency. Be sure to perform margin check using the actual product.
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1-3. Selecting the Output rectifier diode
A schottky barrier is recommended as rectifier diode to be used at the output stage of the DC/DC converter. Select carefully
in consideration of the maximum inductor current, maximum output voltage and power supply voltage.
ΔIL
Maximum inductor current IOMAX + 2
<
Diode Maximum Absolute Current
VIN
<
Diode Maximum Absolute Voltage
Provide sufficient design margins for a tolerance of 30% to 40% for each parameter.
Maximum input voltage
2. Boost Converter
2-1. Selecting the Output LC Constant
IL
IOMAX+
⊿IL
2 should not reach the rated value level.
ILR
IOMAX mean current
t
Figure 47. Inductor Current Waveform ( Boost Converter )
The output inductance (L) is decided by the rated current (ILR) and maximum input current (IINMAX) of the inductance.
Adjust so that IINMAX + ΔIL / 2 does not reach the rated current value.
ΔIL can be obtained by the following equation.
Δ IL 
1
VO  VIN 1
VIN 
 [A]
L
VO
f
where f is the switching frequency
Set with sufficient margin because the inductance value may have a dispersion of ±30%.
If the coil current exceeds the rated current (ILR), this may damage the IC.
2-2. Selecting the Output capacitor
The output capacitor (CO) smoothens the ripple voltage at the output. Select a capacitor that will regulate the output ripple voltage
within the specifications.
Output ripple voltage can be obtained by the following equation.
1
VIN
ΔVPP = ILMAX × RESR + f × CO × VO ×


ΔIL
ILMAX - 2


However, since the aforementioned conditions are based on a lot of factors, verify the results using the actual product.
Since the peak current flows between the input and output at the DC/DC converter, a capacitor is required at the
Input side. For this reason, a low ESR capacitor is recommended as an input capacitor with a value more than
10μF and less than 100mΩ ESR. If an out of range capacitor is selected, the excessive ripple voltage is superimposed on
the input voltage, thus it may cause the malfunction of IC.
However these conditions may vary according to the load current, input voltage, output voltage, inductance and switching
frequency. Be sure to perform the margin check using the actual product.
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2-3. Setting phase compensation
Phase setting procedure.
Stable negative feedback condition is achieved as follows:
・When the gain is set to 1 (0 dB), phase delay should not be more than 150°.Consequently, phase margin should not be
less than 30°.
Also, since DC/DC converter applications are sampled according to the switching frequency, the whole system GBW should
be set to not more than 1/10 of the switching frequency. The target characteristics of the applications can be summarized
as follows:
・When the gain is set to 1 (0 dB), the phase delay should not be more than 150°.
And phase margin should not be less than 30°.
・The frequency when the gain is set to 0 dB should not be more than 1/10 of the switching frequency.
The responsiveness is determined by the GBW limitation. Consequently, to increase the circuit response, higher switching
frequencies are required.
AVDD is in current mode control. The current mode control is a two-pole single-zero system. The poles are formed by the
error amplifier and load while added zero is for phase compensation.
By placing poles appropriately, the circuit can maintain good stability and transient load response.
Board plot diagram of general DC/DC converter is described below. At point (a), gain starts falling via the output impedance
of the error amplifier and forms a pole by capacitor Ccp. When point (b) is reached, a zero is formed by resistor Rpc and
capacitor Ccp to cancel the pole by loading and balancing the variation of Gain and phase.
The GBW (i.e., frequency when the gain is 0 dB) is determined by phase compensation capacitor connected to the error
amplifier. If GBW is to be reduced, increase the capacitance of the capacitor.
A
Vo
R3
Gain
[dB]
R1
C1
R2
A
(a)
-20dB/decade
0
COMP
GBW(b)
f
0
Rcp
Phase
[deg]
Ccp
-90
-90°
Phase margin
-180
-180°
f
Figure 48. Setting phase compensation
Formed Zero (fz1) by Rcp resistor and Ccp Capacitor are shown by using the following equation.
And also, Feed-forward capacitor C1 and R1 resistor both create Formed Zero (fz2) and it is used as boosting phase
margin in the limited frequency area.
Phase lead
Phase lead
1
fZ1 = 2πCcpRcp [Hz]
1
fZ2 =
[Hz]
2πC1R1
The formed zero fz2 phase compensation is built-in to the IC.
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3. Positive Charge Pump : VGH
3-1. Selecting the Output rectifier diode
Select carefully in consideration of the maximum load current, maximum output voltage and power supply voltage.
Maximum output current IOMAX
<
Diode Maximum Absolute Current
Maximum output voltage
AVDD
<
Diode Maximum Absolute Voltage
Provide sufficient design margins for a tolerance of 30% to 40% for each parameter.
3-2. Selecting the Output PNP transistor
Select carefully in consideration of the maximum load current, maximum output voltage and power supply voltage.
AVDD-VIN
Boost Converter Duty
D=
AVDD
IOMAX
Maximum Output current
<Transistor Maximum Absolute Current
D
Power supply voltage
AVDD x 2
<Transistor Maximum Absolute Voltage
DC gain
IOMAX / IBASE
<Transistor hfe
<Transistor Power dissipation
Power dissipation (Doubler Mode)
( 2 x AVDD – VGH – 2 x Vf ) x IOUT
Power dissipation (Tripler Mode)
( 3 x AVDD – VGH – 4 x Vf ) x IOUT
<Transistor Power dissipation
Maximum DRVP current
IBASE(5mA)
Provide sufficient design margins for a tolerance of 30% to 40% for each parameter.
3-3. Selecting the base emitter resistor
100kΩ base-emitter resistor used to ensure proper operation.
3-4. Selecting the flying capacitor and the switch node resistor
0.1uF to 0.47uF flying capacitor and 1Ω to 20Ω resistor are appropriate for most applications.
3-5. Selecting the output capacitor
A 10uF ceramic capacitor is appropriate for most applications. More capacitor can be added to improve the load transient
response.
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4. Negative Charge Pump : VGL
4-1. Selecting the Output rectifier diode
Select carefully in consideration of the maximum load current, maximum output voltage and power supply voltage.
Maximum output current
IOMAX
<
Diode Maximum Absolute Current
Maximum switching voltage
VIN
<
Diode Maximum Absolute Voltage
Provide sufficient design margins for a tolerance of 30% to 40% for each parameter.
4-2. Selecting the Output NPN transistor
Select carefully in consideration of the maximum load current, maximum output voltage and power supply voltage.
VIN-VIO
VIN
Converter Duty
D=
or AVDD
VIN
IOMAX
Maximum output current
<Transistor Maximum Absolute Current
D
Power supply voltage
DC gain
Power dissipation (Doubler Mode)
Or
Maximum DRVN current
VIN
IOMAX / IBASE
(VIN - ∣ VGL ∣ – 2 x Vf ) x IOUT
(AVDD - ∣ VGL ∣ – 2 x Vf ) x IOUT
IBASE(5mA)
<Transistor Maximum Absolute Voltage
<Transistor hfe
<Transistor Power dissipation
Provide sufficient design margins for a tolerance of 30% to 40% for each parameter.
4-3. Selecting the base emitter resistor
100kΩ base-emitter resistor used to ensure proper operation.
4-4. Selecting the flying capacitor and the switch node resistor
0.1uF to 0.47uF flying capacitor and 1Ω to 20Ω resistor are appropriate for most applications.
4-5. Selecting the output capacitor
A 10uF ceramic capacitor is appropriate for most applications. More capacitor can be added to improve the load transient
response.
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Layout Guideline
DC/DC converter switching line must be as short and thick as possible to reduce line impedance. If the wiring is long,
ringing caused by switching would increase and this may exceed the absolute maximum voltage ratings. If the parts are
located far apart, consider inserting a snubber circuit.
The thermal Pad on the back side of IC has the great thermal conduction to the chip. So using the GND plain as broad and
wide as possible can help thermal dissipation. And a lot of thermal via for helping the spread of heat to the different layer is
also effective. When there is unused area on PCB, please arrange the copper foil plain of DC nodes, such as GND, VIN
and VOUT for helping heat dissipation of IC or circumference parts.
Power Dissipation
3.5
(3) 3.2W
POWER DISSIPATION : Pd [W]
3
(2) 2.5W
2.5
2
1.5
(1) 1.1W
1
0.5
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta [℃]
VQFN40W6060A Package
On 4-layer 114.3mm×74.2mm×1.6mm glass epoxy PCB
(1) 1-layer board (Backside copper foil area 0 mm ×0 mm)
(2) 2-layer board (Backside copper foil area 74.2 mm ×74.2 mm)
(3) 4-layer board (The 2nd, 3rd layers and backside copper foil area 74.2 mm ×74.2 mm)
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I/O Equivalence Circuit
1, 2.VINB1
3. FAULT
4.SDA
VINB1
Internal reg.
FAULT
SDA
5.SCL
6.A0
7.HVS
Internal reg.
SCL
Internal reg.
A0
8.AVIN
AVIN
Internal reg.
HVS
10.COMP
11.VL
Internal reg.
AVIN
AVIN
COMP
12.NTC
NTC
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TSZ22111・15・001
VL
15, 16.SW
17.SWI
SWO
SWO
SWI
SWI
SW
SW
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18.SWO
20.VGL
21.DRVN
SWO
SWI
VL
VL
Internal reg.
VL
SW
DRVN
VGL
22.DRVP
23.VGH
24.VGHM
VGH
VGH
VGH
VGH
DRVP
VGHM
RE
25.RE
26.VINB3
VGH
VGH
28.SWB3
VGH
VINB3
VINB3
VGHM
SWB3
RE
30.VDD3
31.EN
VINB3
VDD3
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TSZ22111・15・001
33.SWB2
VINB2
Internal reg.
EN
SWB2
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34.VDD2
35.CTRL
36.VINB2
Internal reg.
VINB2
VDD2
CTRL
37.VDD1
38,39.SWB1
VINB1
VDD1
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VINB1
SWB1
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Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size
and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
Figure 49. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
16. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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Ordering Information
B
M
8
1
1
1
Part Number
0
M
U
W
Package
MUW: VQFN40W6060A
ZE2
Packaging and forming specification
ZE2: Embossed tape and reel
Marking Diagram
VQFN40W6060A (TOP VIEW)
Part Number Marking
8
1 1 1
0
LOT Number
1PIN MARK
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Physical Dimension Tape and Reel Information
Package Name
VQFN40W6060A
ZE2
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Revision History
Date
Revision
Contents
2013.09.11
001
New release
2015.08.10
002
P.1, 22, 23
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Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
BM81110MUW - Web Page
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