PD - 97696A
AUTOMOTIVE GRADE
AUIRF3504
Features
l Advanced Planar Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
HEXFET® Power MOSFET
D
G
S
V(BR)DSS
40V
RDS(on) typ. 7.8mΩ
max 9.2mΩ
ID
87A
D
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
D
S
TO-220AB
AUIRF3504
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
87
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
61
Units
A
c
350
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
143
0.95
± 20
W
W/°C
V
199
mJ
IDM
EAS
Pulsed Drain Current
d
Single Pulse Avalanche Energy (Thermally Limited)
i
EAS (tested)
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
c
h
368
See Fig. 12a, 12b, 15, 16
-55 to + 175
°C
300
10 lbf in (1.1N m)
y
Thermal Resistance
Max.
–––
1.05
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
Junction-to-Case
RθCS
RθJA
j
Parameter
y
Typ.
RθJC
A
mJ
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/30/11
AUIRF3504
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40
–––
–––
2.0
46
–––
–––
–––
–––
–––
0.04
7.8
–––
–––
–––
–––
–––
–––
–––
–––
9.2
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 52A
V VDS = VGS, ID = 100μA
S VDS = 10V, ID = 52A
μA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
36
12
13
9.9
61
24
29
4.5
54
18
20
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2150
600
54
2885
526
147
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
nC
ns
nH
g
pF
ID = 52A
VDS = 32V
VGS = 10V
VDD = 20V
ID = 52A
RG = 2.7 Ω
VGS = 10V
Between lead,
f
f
D
G
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
87
ISM
(Body Diode)
Pulsed Source Current
–––
–––
350
showing the
integral reverse
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.3
98
216
S
p-n junction diode.
TJ = 25°C, IS = 52A, VGS = 0V
TJ = 25°C, IF = 52A
di/dt = 100A/μs
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.15mH
RG = 50Ω, IAS = 52A. (See Figure 12).
ISD ≤ 52A, di/dt ≤ 6750A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
MOSFET symbol
A
–––
–––
–––
–––
65
144
V
ns
nC
D
G
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.15mH, RG = 50Ω, IAS = 52A.
Rθ is measured at TJ of approximately 90°C.
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AUIRF3504
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device
Model
RoHS Compliant
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
N/A
Class M4 (+/- 500V)
AEC-Q101-002
†††
Class H1C (+/- 1500V)
AEC-Q101-001
Class C5 (+/- 2000V)
AEC-Q101-005
†††
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF3504
1000
1000
100
BOTTOM
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
100
10
4.5V
BOTTOM
10
4.5V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
70
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
10
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 175°C
10
T J = 25°C
1
VDS = 25V
≤60μs PULSE WIDTH
0.1
TJ = 25°C
60
50
40
T J = 175°C
30
20
10
V DS = 5.0V
0
380μs PULSE WIDTH
-10
0
2
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
16
0
20
40
60
80
100
120
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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AUIRF3504
100000
VGS, Gate-to-Source Voltage (V)
ID= 52A
C oss = C ds + C gd
10000
C, Capacitance (pF)
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Ciss
1000
Coss
Crss
100
10
12.0
VDS= 32V
VDS= 20V
10.0
VDS= 8.0V
8.0
6.0
4.0
2.0
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
15
20
25
30
35
40
45
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
T J = 175°C
T J = 25°C
10
10
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100
5
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
100
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1.0
DC
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.5
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF3504
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID, Drain Current (A)
80
60
40
20
0
ID = 87A
VGS = 10V
2.0
1.5
1.0
0.5
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.1
0.01
0.001
0.0001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3504
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
800
ID
11A
23A
BOTTOM 52A
TOP
600
400
200
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
4.5
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2μF
.3μF
D.U.T.
+
V
- DS
VGS
VGS(th) , Gate threshold Voltage (V)
VG
4.0
3.5
ID = 100μA
3.0
2.5
2.0
1.5
-100
-50
0
50
100
150
200
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage vs. Temperature
7
AUIRF3504
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
0.05
10
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
250
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 52A
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
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AUIRF3504
D.U.T
Driver Gate Drive
+
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
V DD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF3504
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF3504
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3504
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF3504
TO-220
Form
Tube
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Complete Part Number
Quantity
50
AUIRF3504
11
AUIRF3504
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
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that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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