Diodes BCV47QTC 60v npn darlington transistor in sot23 Datasheet

A Product Line of
Diodes Incorporated
BCV47
60V NPN DARLINGTON TRANSISTOR IN SOT23
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
•
•
•
BVCEO > 60V
Darlington Transistor hFE > 10k @ 100mA for high gain
IC = 500mA high Continuous Collector Current
Complementary Darlington PNP Type: BCV46
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
•
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
C
SOT23
E
B
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Part Number
BCV47TA
BCV47TC
BCV47QTA
BCV47QTC
Notes:
Compliance
AEC-Q101
AEC-Q101
Automotive
Automotive
Marking
ZFG
ZFG
ZFG
ZFG
Reel size (inches)
7
13
7
13
Tape width (mm)
8
8
8
8
Quantity per reel
3,000
10,000
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ZFG
BCV47
Document number: DS33001 Rev. 4 - 2
ZFG = Product Type Marking Code
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
80
60
10
500
800
100
Unit
V
V
V
mA
mA
mA
Value
310
350
403
357
350
-55 to +150
Unit
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Notes:
PD
RθJA
RθJL
TJ,TSTG
mW
°C/W
°C/W
°C
6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is mounted on 15mm x 15mm FR4 PCB.
8. Thermal resistance from junction to solder-point (at the end of the leads).
400
Thermal Resistance (°C/W)
Max Power Dissipation (W)
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
Temperature (°C)
350
300
250
200
D=0.5
150
100
D=0.1
Single Pulse
D=0.2
50
0
100µ
D=0.05
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Derating Curve
Max Power Dissipation (W)
10
Single Pulse. Tamb=25°C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
BCV47
Document number: DS33001 Rev. 4 - 2
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVCBO
BVCEO
BVEBO
80
60
10
—
—
—
—
—
—
<1
—
<1
—
—
—
100
10
100
V
V
V
nA
µA
nA
Collector cut-off current
ICBO
Emitter-base Cut-off Current
ON CHARACTERISTICS (Note 9)
IEBO
hFE
2,000
4,000
10,000
2,000
—
—
—
VCE(sat)
VBE(sat)
—
—
—
—
1.0
1.5
V
V
Transition Frequency
fT
—
170
—
MHz
Output Capacitance
Cobo
—
3.5
—
pF
Static Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS (Note 9)
Notes:
Test Condition
IC = 100µA
ICEO = 10mA
IEBO = 10µA
VCB = 60V
VCB = 60V, TA = +150°C
VEB = 4V
IC = 100µA, VCE = 1V
IC = 10mA, VCE = 5V
IC = 100mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 100mA, IB = 0.1mA
IC = 100mA, IB = 0.1mA
IC = 50mA, VCE = 5V,
f = 20MHz
VCB = 10V, f = 1MHz
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
BCV47
Document number: DS33001 Rev. 4 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
K1
D
F
J
L
G
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
BCV47
Document number: DS33001 Rev. 4 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
E
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BCV47
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Copyright © 2012, Diodes Incorporated
www.diodes.com
BCV47
Document number: DS33001 Rev. 4 - 2
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