Kexin AO3434-HF-3 N-channel mosfet Datasheet

MOSFET
SMD Type
N-Channel MOSFET
AO3434-HF (KO3434-HF)
SOT-23-3
Unit: mm
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
1
● RDS(ON) < 52mΩ (VGS = 10V)
0.55
● ID = 4.2 A (VGS = 10V)
+0.2
1.6 -0.1
+0.2
2.8 -0.1
● VDS (V) = 30V
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
● RDS(ON) < 75mΩ (VGS = 4.5V)
1.1
+0.2
-0.1
● ESD Protected
● Pb−Free Package May be Available.
1. Gate
0-0.1
D
+0.1
0.68 -0.1
The G−Suffix Denotes a Pb−Free Lead Finish
2. Source
3. Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
ID
TA=70℃
PD
V
4.2
3.5
3.3
2.8
1.4
1
0.9
0.64
Thermal Resistance.Junction- to-Ambient
RthJA
90
125
Thermal Resistance.Junction- to-Lead
RthJL
-
80
Junction Temperature
Storage Temperature Range
A
30
IDM
TA=25℃
Unit
TJ
150
Tstg
-55 to 150
W
℃/W
℃
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MOSFET
SMD Type
N-Channel MOSFET
AO3434-HF (KO3434-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
VGS(th)
Test Conditions
Min
Typ
ID=250μA, VGS=0V
VDS=30V, VGS=0V
1
VDS=30V, VGS=0V, TJ=55℃
5
VDS=0V, VGS=±16V
VDS=VGS , ID=250μA
RDS(On)
VGS=10V, ID=4.2A
1
Forward Transconductance
VGS=10V, VDS=5V
gFS
VDS=5V, ID=4.2A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Qgs
Gate Drain Charge
Qgd
Turn-On DelayTime
td(on)
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
Body Diode Reverse Recovery Time
trr
Qrr
Maximum Body-Diode Continuous Current
IS
Diode Forward Voltage
VSD
■ Marking
Marking
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B4** F
uA
1.8
V
A
8.5
269
VGS=0V, VDS=15V, f=1MHz
mΩ
75
30
S
340
pF
65
41
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=4.2A
1
1.5
5.7
7.2
3
Ω
nC
1.37
0.65
3.8
8
VGS=10V, VDS=15V, RL=3.6Ω,RG=3Ω
23
ns
5.5
tf
Body Diode Reverse Recovery Charge
±10
74
TJ=125℃
Qg
Gate Source Charge
Turn-Off Fall Time
2
ID(ON)
uA
52
VGS=4.5V, ID=2A
On State Drain Current
Unit
V
VGS=10V, ID=4.2A
Static Drain-Source On-Resistance
Max
30
IF= 4.2A, dI/dt= 100A/μs
IS=1A,VGS=0V
15.5
21
7.1
nC
1.8
A
1
V
MOSFET
SMD Type
N-Channel MOSFET
AO3434-HF (KO3434-HF)
■ Typical Characterisitics
30
20
4.5V
15
4V
9
6
3.5V
10
VDS=5V
12
6V
ID(A)
ID (A)
25
15
8V
10V
125°C
3
5
25°C
VGS=3V
0
0
1
2
0
3
4
5
0
1
VDS (Volts)
Fig 1: On-Region Characteristics
4
5
6
1.8
Normalized On-Resistance
VGS=4.5V
70
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics
80
60
50
40
VGS=10V
30
VGS=10V
Id=4.2A
1.6
1.4
VGS=4.5V
Id=3.5A
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
102
1.0E+01
ID=4.2A
90
1.0E+00
125°C
78
1.0E-01
IS (A)
RDS(ON) (mΩ)
2
66
125°C
1.0E-02
25°C
1.0E-03
54
25°C
1.0E-04
42
1.0E-05
30
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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MOSFET
SMD Type
N-Channel MOSFET
AO3434-HF (KO3434-HF)
■ Typical Characterisitics
500
10
V DS =15V
ID=4.2A
400
Capacitance (pF)
VGS (Volts)
8
6
4
C iss
300
200
C oss
2
100
0
0
0
1
2
3
4
5
6
C rss
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10 µs
25
100 µs
1.0
1ms
10ms
0.0
0.01
0.1
20
15
10
10s
1
VDS (Volts)
10
5
0
0.001
100
D=T on /T
T J,PK =T A +PDM .Z θJA .RθJA
R θJA =125°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
.
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
TJ(Max)=150°C
TA=25°C
0.1s
DC
T J(Max) =150°C
T A =25°C
Power (W)
ID (Amps)
R DS(ON)
limited
0.1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
0.01
0.00001
T on
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
30
30
10.0
ZθJA Normalized Transient
Thermal Resistance
10
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100
1000
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