CPD32X Schottky Rectifier Die 10 Amp, 40 Volt w w w. c e n t r a l s e m i . c o m The CPD32X Schottky die is optimized for alternative energy applications. The 6 mil thick die provides an ultra low profile that is readily attached via standard die attach methods. Parametrically, the device is extremely energy efficient as a result of low forward and reverse conduction losses. FEATURES: • Low forward voltage at 10 Amps forward current • Low reverse leakage current • Low profile geometry • Metalization suitable for standard die attach technologies • Top metalization optimized for wire bonding APPLICATIONS: The CPD32X is optimized for use as a by-pass rectifier in low profile solar (PV) panels. MECHANICAL SPECIFICATIONS: Die Size 85 x 85 MILS Die Thickness 5.9 MILS ± 0.8 MILS Die Passivation SiN Anode Bonding Pad Area 75 x 75 MILS Top Side Metalization Al – 30,000Å Back Side Metalization Ti/Ni/Au – 1,600Å/5,550Å/1,500Å Scribe Alley Width 3.15 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 2,260 MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current Peak Forward Surge Current (tp=8.3ms) Operating and Storage Junction Temperature SYMBOL VRRM VR IO IFSM TJ, Tstg 40 UNITS V 40 V 10 A 250 A -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=10V 10 200 IR IR VR=40V VR=40V, TA=100°C BVR VF IR=0.5mA IF=5.0A VF IF=10A PACKING OPTIONS: • CPD32X-WN: Full Wafer UNITS μA 30 500 μA 15 50 mA 40 V 0.43 0.48 V 0.48 0.52 V • CPD32X-WR: Sawn Wafer on Plastic Ring R3 (2-December 2011) w w w. c e n t r a l s e m i . c o m CPD32X Typical Electrical Characteristics R3 (2-December 2011) w w w. c e n t r a l s e m i . c o m