CGHV37400F 400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.5 - 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV35400 is based on Cree’s high power density 50 V, 0.4 µm GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: CGHV374 00F Package Type : 440217 Typical Performance Over 3.5-3.7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.5 GHz 3.6 3.7 GHz Units Output Power 555 560 555 W Gain 11.4 11.5 11.4 dB 55 55 55 % Drain Efficiency Note: Measured in the CGHV37400F-AMP application circuit, under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm. 20 Rev 0.0 - March 18 Features • 3.3 - 3.8 GHz Operation • 550 W Typical Output Power • 11.5 dB Power Gain • 55% Typical Drain Efficiency • 50 Ohm Internally Matched • <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Pulse Width PW 100 µs Conditions Duty Cycle DC 10 % Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature ˚C TSTG -65, +150 Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 80 mA 25˚C Maximum Drain Current IDMAX 24 A 25˚C Soldering Temperature2 TS 245 ˚C 1 τ 40 in-oz Pulsed Thermal Resistance, Junction to Case RθJC 0.22 ˚C/W 100 μsec, 10%, 85˚C , PDISS = 418 W Pulsed Thermal Resistance, Junction to Case RθJC 0.30 ˚C/W 500 μsec, 10%, 85˚C, PDISS = 418 W TC -40, +125 ˚C Screw Torque Case Operating Temperature Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 83.6 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 0.5 A Saturated Drain Current IDS 62.7 75.5 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 83.6 mA DC Characteristics1 (TC = 25˚C) 2 RF Characteristics (TC = 25˚C, F0 = 3.5 - 3.7 GHz unless otherwise noted) 3 Output Power at 3.5 GHz POUT1 – 555 – W VDD = 50 V, IDQ = 1000 mA, PIN = 46 dBm Output Power at 3.6 GHz POUT2 – 560 – W VDD = 50 V, IDQ = 1000 mA, PIN = 46 dBm Output Power at 3.7 GHz POUT3 – 555 – W VDD = 50 V, IDQ = 1000 mA, PIN = 46 dBm Power Gain at 3.5 GHz GP1 – 11.4 – dB VDD = 50 V, IDQ = 1000 mA, PIN = 46 dBm Power Gain at 3.6 GHz GP2 – 11.5 – dB VDD = 50 V, IDQ = 1000 mA, PIN = 46 dBm Power Gain at 3.7 GHz GP3 – 11.4 – dB VDD = 50 V, IDQ = 1000 mA, PIN = 46 dBm Drain Efficiency DE – 55 – % VDD = 50 V, IDQ = 1000 mA, PIN = 46 dBm Small Signal Gain S21 – 14 – dB VDD = 50 V, IDQ = 1000 mA, PIN = -10 dBm Input Return Loss S11 – -9 – dB VDD = 50 V, IDQ = 1000 mA, PIN = -10 dBm Output Return Loss S22 – -6 – dB VDD = 50 V, IDQ = 1000 mA, PIN = -10 dBm D – -0.3 – dB VDD = 50 V, IDQ = 1000 mA, PIN = 46 dBm VSWR – 5:1 – Y No damage at all phase angles, VDD = 50 V, IDQ = 1000 mA, PIN = 46 dBm Pulsed Amplitude Droop Output Stress Match Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV37400F-AMP. Pulse Width = 100 μS, Duty Cycle = 10%. 4 The device is not recommended for 5:1 VSWR applications below 3.3 GHz. Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV37400F Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV37400F Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - Typical Small Signal GainSparameters and Return Losses vs Frequency CGHV37400F VDD = 50 V, IDQ = 1.0 A Vdd = 50 V, Idq = 1 A 20 15 10 Magnitude (dB) 5 0 -5 S21 -10 S11 S22 -15 -20 -25 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 Frequency (GHz) 4.1 4.3 4.5 650 90 600 80 550 70 500 60 450 50 400 40 350 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Frequency (GHz) 3.5 3.6 3.7 Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV37400F Rev 0.0 3.8 3.9 Drain Efficiency (%) Output Power (W) Figure 2. - CGHV37400F Output Power and Drain Efficiency vs Frequency CGHV37400F Output Power and Drain Efficiency vs. Frequency VDD = 50 V, IDQ = 1.0 A, V, PINIdq = =46 dBm, Width 100µs, Duty Cycle = 10 %,%TCASE = 25˚C Vdd = 50 1 A, Pin =Pulse 46 dBm, Pulse=Width = 100 us, Duty Cycle = 10 30 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 3. - Typical Output Power vs Input Power of the CGHV37400F VDD = 50 V, IDQ = 1.0CGHV37400F A, Pulse Width = 100µs, Duty Cycle = 10%, TCASE = 25˚C Output Power vs. Input Power 60 Output Power (dBm) 55 50 3.5 GHz 45 3.6 GHz 3.7 GHz 40 35 25 30 35 40 Input Power (dBm) 45 50 60 16 50 14 Drain Efficiency - 3.5 GHz 40 12 Drain Efficiency - 3.6 GHz Drain Efficiency - 3.7 GHz Gain - 3.5 GHz 30 10 Gain - 3.6 GHz Gain - 3.7 GHz 20 8 10 6 0 25 30 35 40 Input Power (dBm) 45 Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV37400F Rev 0.0 50 Gain (dB) Drain Efficiency (%) Figure 2. - CGHV37400F Drain Efficiency and Gain vs Input Power VDD = 50 V, IDQ CGHV37400F = 1.0 A, Pulse Width = 100µs, Dutyvs.Cycle 10 %, TCASE = 25˚C Drain Efficiency and Gain Input = Power 4 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV37400F-AMP Application Circuit Bill of Materials Designator Description Qty R1 RES, 511, OHM, +/- 1%, 1/16W, 0603 1 R2 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 1 C1 CAP, 6.8pF, +/-0.25%, 250V, 0603 1 C2, C7, C8 CAP, 10.0pF, +/-1%, 250V, 0805 3 C3 CAP, 10.0pF, +/-5%, 250V, 0603 1 CAP, 470pF, 5%, 100V, 0603, X 2 C5 CAP, 33000 pF, 0805, 100V, X7R 1 C6 CAP, 10uF 16V TANTALUM 1 C10 CAP, 1.0uF, 100V, 10%, X7R, 1210 1 C11 CAP, 33uF, 20%, G CASE 1 C12 CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC 1 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER, RT>PLZ, 0.1CEN LK 9POS 1 J4 CONNECTOR; SMB, Straight, JACK, SMD 1 W1 CABLE, 18 AWG, 4.2 1 PCB, RO4350, 2.5 X 4.0 X 0.030 1 CGHV37400F 1 C4, C9 J1,J2 Q1 CGHV37400F Power Dissipation De-rating Curve CGHV35400F Transient Power Dissipation De-Rating Curve 450 400 Power Dissipation (W) 350 Note 1 300 250 200 150 100 100 us 10 % 500 us 10 % 50 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Maximum Maximum Case Temperature (°C) 200 225 250 Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV37400F Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV37400F-AMP Application Circuit Outline CGHV37400F-AMP Application Circuit Schematic Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV37400F Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV37400F (Package Type — 440217) Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV37400F Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV37400F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 3.7 GHz 400 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV37400F Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV37400F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV37400F-TB CGHV37400F-AMP Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV37400F Rev 0.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV37400F Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf