AWB31D7 AWB31D7 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview 1.1 Features 5 ~ 1200 MHz Bandwidth 17.0 dB Gain at 500 MHz CSO : 68 dBc, CTB : 67 dBc @ Pout = 99 dBV flat for NTSC 79 channels + QAM256 75 channels, -6 dB offset Robust under Hard Operating Conditions +5 V, 220 mA Supply 1.2 Applications CATV Line Amplifiers HFC Nodes Head End Equipment 1.3 Package Profile & RoHS Compliance SOIC8, 6.0x4.8 mm2, surface mount 1/15 ASB Inc. [email protected] RoHS-compliant June 2017 AWB31D7 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 50 500 1002 1200 MHz Gain 17.2 17.0 17.0 17.1 dB S11 -20.0 -15.0 -18.0 -18.0 dB S22 -20.0 -14.0 -18.0 -15.0 dB Output IP31) 39 42 41 37 dBm Output IP21),2) 81 62 65 50 dBm Output P1dB 25 26 25 25 dBm Noise Figure 2.4 2.2 2.1 2.2 dB CSO3) 68 dBc CTB3) 67 dBc Current 220 mA Device Voltage +5 V 1) OIP3 and OIP2 are measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. 3) CSO & CTB measured at Pout = 99 dBV flat for NTSC 79 channels + QAM 256 75 channels, -6 dB offset. 2.2 Product Specification Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Min Typ Max Unit Frequency 500 MHz Gain 17.0 dB S11 -15 dB S22 -14 dB Output IP31) 42 dBm Output IP21),2) 62 dBm Output P1dB 26 dBm Noise Figure 2.2 dB Current 220 mA Device Voltage +5 V 1) OIP3 and OIP2 are measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. 2/15 ASB Inc. [email protected] June 2017 AWB31D7 2.3 Pin Configuration Pin Description Simplified Outline 1, 4 RF_IN 2 Current Adjustable 7 VCG Adjustable 1 8 2 5, 8 RF_ OUT 3, 6 7 Bias Circuit 3 6 4 5 NC or GND Note: Backside metal paddle is RF and DC ground. 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +9 V Maximum Current 450 mA Operation Junction Temperature +150 C Input RF Power (CW, 75 matched) +25 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 17 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 750 V MM Class A Voltage Level: 100 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow 3/15 ASB Inc. [email protected] June 2017 AWB31D7 3. Application: 50 ~ 1200 MHz (75 Push-pull, Vsupply = +5 V) 3.1 Application Circuit & Evaluation Board Vdevice = +5 V C4 C3 R1 C5 C7 L1 C6 AWB31D7 L2 T1(MABA-007159) C1 RF IN L3 R3 R4 R2 C9 C2 C13 C8 L6 L5 C11 T2(MABA-007159) RF OUT C12 L4 C10 Vdevice = +5 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-S8-H2 Bill of Material 4/15 Symbol Value Size Description Manufacturer AWB31D7 - - MMIC Amplifier ASB C1, C2, C7, C8 1 F 0603 DC blocking capacitor Murata C3, C9 1 F 0603 Feedback capacitor Murata C4, C10 10 F 0805 Decoupling capacitor Murata C5, C11, C13 0.5 pF 0603 Matching capacitor Murata C6, C12 1.2 pF 0603 Matching capacitor Murata L1, L4 1 H 1206 RF choke inductor Murata L2, L5 1.8 nH 0603 Matching inductor Murata L3, L6 2.7 nH 0603 Matching inductor Murata R1, R2 360 0603 Feedback resistor Samsung R3 39 0402 Current adjust resistor Samsung R4 1.1 k 0402 VCG adjust resistor Samsung T1, T2 1:1 - Transformer balun MACOM ASB Inc. [email protected] June 2017 AWB31D7 3.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Frequency 50 500 1002 1200 MHz Gain 17.2 17.0 17.0 17.1 dB S11 -20.0 -15.0 -18.0 -18.0 dB S22 Unit -20.0 -14.0 -18.0 -15.0 dB Output IP31) 39 42 41 37 dBm Output IP21),2) 81 62 65 50 dBm Output P1dB 25 26 25 25 dBm Noise Figure 2.4 2.2 2.1 2.2 dB CSO3) 68 dBc CTB3) 67 dBc Current 220 mA Device Voltage +5 V 1) OIP3 and OIP2 are measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. 3) CSO & CTB measured at Pout = 99 dBV flat for NTSC 79 channels + QAM 256 75 channels, -6 dB offset. 40 10 30 9 S21 20 8 10 7 0 6 -10 -20 5 S22 S12 4 -30 3 S11 -40 2 K -50 1 -60 0 5/15 Stability Factor, K Plot of S-parameter & Stability Factor S-parameter (dB) 3.3 200 ASB Inc. 400 600 800 Frequency (MHz) [email protected] 1000 0 1200 June 2017 AWB31D7 3.4 Plots of Noise Figure and Performances with Temperature 20 10 -40 °C +25 °C 15 +85 °C 6 Gain (dB) NF (dB) 8 4 10 -40 °C +25 °C 5 2 +85 °C 0 0 0 200 400 600 800 Frequency (MHz) 1000 0 0 1200 200 400 600 800 Frequency (MHz) 1000 1200 0 -40 °C -40 °C +25 °C +25 °C +85 °C -10 +85 °C S22 (dB) S11 (dB) -10 -20 -20 -30 -40 -30 0 200 400 600 800 Frequency (MHz) 1000 0 1200 200 400 600 800 Frequency (MHz) 1000 1200 25 230 Frequency = 500 MHz 20 Gain (dB) Current (mA) 225 220 215 10 5 0 210 -60 6/15 15 -40 -20 0 20 40 Temperature (°C) 60 80 -60 100 ASB Inc. [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 June 2017 AWB31D7 60 5 Frequency = 500 MHz Frequency = 500 MHz 50 Output IP3 (dBm) NF (dB) 4 3 2 1 40 30 -40 °C 20 +25 °C 10 +85 °C 0 0 -60 -40 -20 0 20 40 Temperature (°C) 60 80 8 100 9 10 11 12 Output tone power (dBm) 13 14 100 Output IP2 (dBm) Frequency = 500 MHz 80 60 -40 °C 40 +25 °C 20 +85 °C 0 8 9 10 11 12 Output tone power (dBm) 13 14 (Intentionally Blanked) 7/15 ASB Inc. [email protected] June 2017 AWB31D7 4. Application: 50 ~ 1200 MHz (75 Push-pull, Vsupply = +8 V) 4.1 Application Circuit & Evaluation Board Vdevice = +8 V C4 C3 R1 C5 C7 L1 C6 AWB31D7 L2 T1(MABA-007159) C1 RF IN L3 R3 R4 R2 C9 C2 C13 C8 L6 L5 C11 T2(MABA-007159) RF OUT C12 L4 C10 Vdevice = +8 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-S8-H2 Bill of Material 8/15 Symbol Value Size Description Manufacturer AWB31D7 - - MMIC Amplifier ASB C1, C2, C7, C8 1 F 0603 DC blocking capacitor Murata C3, C9 1 F 0603 Feedback capacitor Murata C4, C10 10 F 0805 Decoupling capacitor Murata C5, C11, C13 0.5 pF 0603 Matching capacitor Murata C6, C12 1.2 pF 0603 Matching capacitor Murata L1, L4 1 H 1206 RF choke inductor Murata L2, L5 1.8 nH 0603 Matching inductor Murata L3, L6 2.7 nH 0603 Matching inductor Murata R1, R2 360 0603 Feedback resistor Samsung R3 18 0402 Current adjust resistor Samsung R4 1.1 k 0402 VCG adjust resistor Samsung T1, T2 1:1 - Transformer balun MACOM ASB Inc. [email protected] June 2017 AWB31D7 4.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Typical Frequency 50 500 1002 1200 MHz Gain 17.3 17.1 17.1 17.2 dB S11 -22.0 -16.0 -22.0 -17.0 dB S22 Unit -20.0 -14.0 -17.0 -15.0 dB Output IP31) 42 45 43 43 dBm Output IP21),2) 78 67 65 57 dBm Output P1dB 28 29 28 28 dBm Noise Figure 2.8 2.4 2.3 2.4 dB CSO3) 71 dBc CTB3) 63 dBc Current 340 mA Device Voltage +8 V 1) OIP3 and OIP2 are measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. 3) CSO & CTB measured at Pout = 103 dBV flat for NTSC 79 channels + QAM 256 75 channels, -6 dB offset. 40 10 30 9 20 8 S21 10 7 0 6 -10 5 S12 -20 4 S11 -30 3 S22 -40 2 K -50 1 -60 0 9/15 Stability Factor, K Plot of S-parameter & Stability Factor S-parameter (dB) 4.3 200 ASB Inc. 400 600 800 Frequency (MHz) [email protected] 1000 0 1200 June 2017 AWB31D7 5. Application: 5 ~ 300 MHz (75 Push-pull, Vsupply = +5 V) 5.1 Application Circuit & Evaluation Board Vdevice = +5 V C5 C4 R1 T1(MABA-007159) C1 RF IN C2 C6 C7 L1 AWB31D7 R3 R4 R2 C9 L2 C3 L4 C8 T2(MABA-007159) RF OUT L3 C10 Vdevice = +5 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-S8-H2 Bill of Material 10/15 Symbol Value Size Description Manufacturer AWB31D7 - - MMIC Amplifier ASB C1, C2, C3 1 F 0603 DC blocking capacitor Murata C6, C7, C8 1 F 0603 DC blocking capacitor Murata C4, C9 1 F 0603 Feedback capacitor Murata C5, C10 10 F 0805 Decoupling capacitor Murata L1, L3 10 H 1206 RF choke inductor Murata L2, L4 2.7 nH 0603 Matching inductor Murata R1, R2 360 0603 Feedback resistor Samsung R3 39 0402 Current adjust resistor Samsung R4 1.1 k 0402 VCG adjust resistor Samsung T1, T2 1:1 - Transformer balun MACOM ASB Inc. [email protected] June 2017 AWB31D7 5.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Frequency 5 50 300 MHz Gain 17 17.2 17.1 dB S11 -20 -20 -19 dB S22 Unit -18 -20 -19 dB Output IP31) 38 39 40 dBm Output IP21),2) 71 80 72 dBm 25 25 26 dBm 2.2 2.2 dB Output P1dB Noise Figure Current 220 mA Device Voltage 5 V 1) OIP3 and OIP2 are measured with two tones at an output power of +12 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 10 9 8 7 6 5 4 3 2 1 0 S21 S12 S11 0 K 50 100 150 200 Frequency (MHz) S22 250 Stability Factor, K Plot of S-parameter & Stability Factor S-parameter (dB) 5.3 300 (Intentionally Blanked) 11/15 ASB Inc. [email protected] June 2017 AWB31D7 6. Application: 5 ~ 300 MHz (75 Push-pull, Vsupply = +8 V) 6.1 Application Circuit & Evaluation Board Vdevice = +8 V C5 C4 R1 T1(MABA-007159) C1 RF IN C2 C6 C7 L1 AWB31D7 R3 R4 R2 C9 L2 C3 L4 C8 T2(MABA-007159) RF OUT L3 C10 Vdevice = +8 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-S8-H2 Bill of Material 12/15 Symbol Value Size Description Manufacturer AWB31D7 - - MMIC Amplifier ASB C1, C2, C3 1 F 0603 DC blocking capacitor Murata C6, C7, C8 1 F 0603 DC blocking capacitor Murata C4, C9 1 F 0603 Feedback capacitor Murata C5, C10 10 F 0805 Decoupling capacitor Murata L1, L3 10 H 1206 RF choke inductor Murata L2, L4 2.7 nH 0603 Matching inductor Murata R1, R2 360 0603 Feedback resistor Samsung R3 18 0402 Current adjust resistor Samsung R4 1.1 k 0402 VCG adjust resistor Samsung T1, T2 1:1 - Transformer balun MACOM ASB Inc. [email protected] June 2017 AWB31D7 6.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Typical Frequency 5 50 300 MHz Gain 17.3 17.4 17.3 dB S11 -20 -20 -19 dB S22 Unit -18 -20 -19 dB Output IP31) 39 43 47 dBm Output IP21),2) 80 80 70 dBm 28 28 29 dBm 2.7 2.5 dB Output P1dB Noise Figure Current 340 mA Device Voltage 8 V 1) OIP3 and OIP2 are measured with two tones at an output power of +12 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 10 9 8 7 6 5 4 3 2 1 0 S21 S12 S11 S22 K 0 50 100 150 200 Frequency (MHz) 250 Stability Factor, K Plot of S-parameter & Stability Factor S-parameter (dB) 6.3 300 (Intentionally Blanked) 13/15 ASB Inc. [email protected] June 2017 AWB31D7 7. Package Outline (SOIC8) Part No. Symbols AWB31D7 A A1 A2 B C D D2 E E1 E2 e L y \ L1-L1 L1 Dimensions (In mm) MIN NOM 1.40 1.50 0.00 ----1.45 0.33 --0.19 --4.80 --3.20 3.30 5.80 6.00 3.80 3.90 2.30 2.40 --1.27 0.40 --------0 ----1.04REF MAX 1.60 0.10 --0.51 0.25 5.00 3.40 6.20 4.00 2.50 --1.27 0.10 8 0.12 le is RF and DC ground. 8. Surface Mount Recommendation (In mm) NOTE 1. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 2. To ensure reliable operation, device ground paddle-to-ground pad soldering is critical. 3. Add mounting screws near the part to fasten the board to a heat sinker. Ensure that the ground & thermal via region contacts the heat sinker. 4. A proper heat dissipation path underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat dissipation. 14/15 ASB Inc. [email protected] June 2017 AWB31D2 0 9. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec (End of Datasheet) Copyright 2014-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 15/15 ASB Inc. [email protected] February 2017