FDMC86320 N-Channel Power Trench® MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A MSL1 robust package design 100% UIL Tested RoHS Compliant Applications Primary DC-DC Switch Motor Bridge Switch Synchronous Rectifier Bottom Top Pin 1 S S S S D S D S D G D G D D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 10.7 A 50 Single Pulse Avalanche Energy PD Units V 22 -Pulsed EAS Ratings 80 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 60 40 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.1 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC86320 Device FDMC86320 ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev.C2 Package Power 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86320 N-Channel Power Trench® MOSFET June 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.5 V 80 V 56 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 10.7 A 9.7 rDS(on) Static Drain to Source On Resistance VGS = 8 V, ID = 8.5 A 11.4 16 VGS = 10 V, ID = 10.7 A, TJ = 125 °C 15 18 VDS = 10 V, ID = 10.7 A 20 gFS Forward Transconductance 2.4 3.5 -11 mV/°C 11.7 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 40 V, VGS = 0 V, f = 1 MHz 1985 2640 pF 353 469 pF 12 30 pF Ω 0.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VDD = 40 V, ID = 10.7 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V VGS = 0 V to 8 V Qg(TOT) Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 40 V, ID = 10.7 A 15 28 ns 8 16 ns 20 35 ns 5 10 ns 29 41 nC 24 34 nC 10 nC 6.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 10.7 A (Note 2) 0.84 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.75 1.2 38 61 ns 27 43 nC IF = 10.7 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 20 A, VDD = 72 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev.C2 2 www.fairchildsemi.com FDMC86320 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V VGS = 6.5 V VGS = 8 V 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 50 VGS = 7 V 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 6 V 20 10 VGS = 5.5 V 0 0 1 2 3 4 VGS = 5.5 V VGS = 6.5 V 3 VGS = 7 V 2 VGS = 8 V 1 0 5 0 10 30 40 50 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 1.8 40 ID = 10.7 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 30 ID = 10.7 A 20 TJ = 125 oC 10 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs. Gate to Source Voltage Figure 3. Normalized On Resistance vs. Junction Temperature 50 50 40 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS, DRAIN TO SOURCE VOLTAGE (V) VDS = 5 V 30 TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 0 VGS = 6 V 4 2 3 4 5 6 7 VGS = 0 V 10 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 8 TJ = 150 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev.C2 3 1.2 www.fairchildsemi.com FDMC86320 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3000 ID = 10.7 A VDD = 40 V Ciss 1000 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V VDD = 30 V 6 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0 0 5 10 15 20 25 5 0.1 30 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) TJ = 25 oC TJ = 100 oC TJ = 125 oC 0.1 1 40 VGS = 10 V 30 VGS = 8 V 20 10 Limited by Package o RθJC = 3.1 C/W 10 0 25 50 50 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 μs 1 ms 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 0.01 0.01 10 s DC TA = 25 oC 0.1 1 10 100 400 150 2000 1000 VGS = 10 V 100 10 SINGLE PULSE RθJA = 125 oC/W o 1 TA = 25 C 0.5 -4 -3 -2 10 10 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev.C2 125 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 100 THIS AREA IS LIMITED BY rDS(on) 100 o Figure 9. Unclamped Inductive Switching Capability 10 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 0.1 100 50 10 1 10 Figure 8. Capacitance vs. Drain to Source Voltage 30 1 0.01 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC86320 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev.C2 5 www.fairchildsemi.com FDMC86320 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC86320 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. 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