ETC ASG303 Dc-2500 mhz sige hbt amplifier Datasheet

ASG303
DC-2500 MHz SiGe HBT Amplifier
Description
Features
·SiGe Technology
·19 dB Gain at 900 MHz
·+19 dBm P1dB
·+40 dBm Output IP3
·2.9 dB Noise Figure
·MTTF > 100 Years
·Single +5 V Supply
·SOT-89 Surface Mount Package
The ASG303 is designed for high linearity, high
gain, and low noise over a wide range of frequency, being suitable for use in both receiver
and
transmitter
telecommunication
of
wireless
systems.
and
The
303
wireline
product
is
manufactured using a state-of-the-art SiGe HBT
process of the company's own, making it cost-
Package Style: SOT-89
effective and highly reliable. The amplifiers are
available in a low cost SOT-89
completing stringent DC and RF tests.
package
Specifications 1)
Parameters
Units
Frequency Range
Min.
MHz
Gain
Typ.
Max.
Applications
250 - 2500
dB
18
19
·CDMA,GSM,W-CDMA,PCS
Input VSWR
-
1.5
·Gain Block
Output VSWR
-
1.5
·CATV Amplifier
40
·IF Amplifier
2.9
·Bluetooth Amplifier
·Wireless LAN Amplifier
Output IP3
2)
dBm
38
Noise Figure
dB
Output P1dB
dBm
19
Supply Current
mA
55
Supply Voltage
Thermal Resistance, Rth
3)
V
5
°C/W
78.2
1) Measurement conditions are as follows: T = 25°C, VCC = 5 V, Freq. = 900 MHz, 50 ohm system.
2) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz.
3) The thermal resistance was determined at a DC power of 0.270 W (VCC=5 V, IC=54 mA) with RF signal and a lead temperature
of 28.8 °C
Absolute Maximum Ratings
Parameters
Rating
Remarks
Operating Case Temperature
-40 to +85°C
Storage Temperature
-40 to +150°C
Supply Voltage
8V
Operating Junction Temperature
150°C
Input RF Power (continuous)
+6 dB above Input P1dB
More Information
Website: www.asb.co.kr
E-mail: [email protected]
Tel: (82) 42-528-7220
Fax: (82) 42-528-7222
Application Note
ASB Inc., 4th Fl. Venture Town
Bldg., 367-17 Goijeong-Dong,
Seo-Gu, Daejon 302-716, Korea
Ordering Information
Part Number
ASG303
Description
High linearity medium power amplifier
(Available in tape and reel)
EB-ASG303-900
Fully assembled evaluation kit (900 MHz)
EB-ASG303-2000
Fully assembled evaluation kit (2000 MHz)
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March 2004
ASG303
Outline Drawing
(Unit: mm)
3
a
2
2
1
Pin Description
Function
Pin No.
Input
1
Ground
2
Output
3
Land Pattern
Mounting Configuration
(Unit: mm)
Note: 1. The number and size of ground via holes in a circuit board is critical for thermal
and RF grounding considerations.
2. We recommend that the ground via holes be placed on the bottom of lead pin 2
for better RF and thermal performance, as shown in the drawing at the left side.
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ASG303
Application Circuit: 900 MHz
Schematic
Typical Performance
Frequency
900 MHz
Magnitude S21
19 dB
Magnitude S11
-16 dB
Magnitude S22
-16 dB
Output P1dB
19 dBm
Output IP3
1)
2.8 dB
Supply Voltage
5V
Current
55 mA
C6=
1 µF
R1=11 kΩ
C4=0.1 µF
40 dBm
Noise Figure
C5=
100 pF
Vcc=5V
RF IN
L2=22 nH
L1=390 nH
RF OUT
C1=6 pF
50 Ω
ASG303
7 mm
L3=33nH
1) OIP3 is measured with two tones at an output power of +8 dBm/tone
separated by 1MHz
C3=100pF
C2=5 pF
2
Board Layout (FR4, 40x40 mm , 0.8T)
Gain vs. Temperature
24
22
Frequency = 900MHz
20
18
16
14
12
10
-40
-20
0
20
40
60
80
100
S-parameters
0
0
-5
-5
-10
-10
-15
-15
-20
-20
-25
-25
85ΒC
25ΒC
-40ΒC
-30
-30
-35
-35
600
3/6
85ΒC
25ΒC
-40ΒC
700
800
900
1000
1100
1200
600
700
800
900
1000
1100
ww.ASB.co.kr
1200
March 2004
ASG303
0
30
-5
85ΒC
25ΒC
-40ΒC
25
-10
20
-15
85ΒC
25ΒC
-40ΒC
-20
15
-25
10
-30
5
-35
600
700
800
900
1000
1100
1200
600
700
800
900
1000
1100
1200
OP1 vs. Frequency
28
26
85ΒC
25ΒC
-40ΒC
24
22
20
18
16
14
12
800
850
900
950
1000
Output IP3 vs. Tone Power
(Frequency = 900MHz)
Output IP3 vs. Frequency
(Pout per tone = 8dBm)
55
55
50
45
40
35
35
30
30
850
900
950
85ΒC
25ΒC
-40ΒC
45
40
800
4/6
50
85ΒC
25ΒC
-40ΒC
1000
4
5
6
7
8
9
10
11
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March 2004
Application Circuit: 2000 MHz
Schematic
Typical Performance
Frequency
2000 MHz
Magnitude S21
12.5 dB
Magnitude S11
-24 dB
Magnitude S22
-23 dB
Output P1dB
19 dBm
Output IP3
1)
3.3 dB
Supply Voltage
5V
Current
55 mA
C7=
1 µF
R1=11 kΩ
C5=0.1 µF
40 dBm
Noise Figure
C6=
100 pF
Vcc=5 V
RF IN
L2=10 nH
L1=100 nH
RF OUT
C1=1 pF
50 Ω
ASG303
C3=100pF
3 mm
C4=0.5 pF
L3=22nH
1) OIP3 is measured with two tones at an output power of +8 dBm/tone
separated by 1 MHz.
C2=0.75 pF
Board Layout (FR4, 40x40 mm2, 0.8T)
Gain vs. Temperature
20
18
Frequency = 2GHz
16
14
12
10
8
-40
-20
0
20
40
60
80
100
S-parameters
0
0
-10
-10
-20
-20
-30
-30
85ΒC
25ΒC
-40ΒC
-40
-50
1700
5/6
85ΒC
25ΒC
-40ΒC
-40
-50
1800
1900
2000
2100
2200
2300
1700
1800
1900
2000
2100
2200
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2300
March 2004
ASG303
30
0
85ΒC
25ΒC
-40ΒC
25
-10
20
-20
15
-30
10
5
1700
85ΒC
25ΒC
-40ΒC
-40
-50
1800
1900
2000
2100
2200
2300
1700
1800
1900
2000
2100
2200
2300
OP1 vs. Frequency
26
85ΒC
25ΒC
-40ΒC
24
22
20
18
16
14
12
1800
1850
1900
1950
2000
2050
2100
Output IP3 vs. Frequency
(Pout per tone = 8dBm)
Output IP3 vs. Tone Power
(Frequency = 2000MHz)
55
55
85ΒC
25ΒC
-40ΒC
50
45
6/6
45
40
40
35
35
30
30
25
25
1800
1850
1900
1950
2000
2050
85ΒC
25ΒC
-40ΒC
50
2100
5
6
7
8
9
10
11
12
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13
March 2004
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