DMT6008LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TC = +25°C 7.5mΩ @ VGS = 10V 60A 11.5mΩ @ VGS = 4.5V 49A V(BR)DSS NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 60V Features and Benefits • Low RDS(ON) – Ensures on State Losses Are Minimized • Excellent Qgd x RDS (ON) Product (FOM) • Advanced Technology for DC/DC Converts • Small Form Factor Thermally Efficient Package Enables Higher Density End Products • Description Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • • ESD Protected Gate ideal for high efficiency power management applications. • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Applications 100% UIS (Avalanche) rated • Synchronous Rectifier • Backlighting Mechanical Data • Power Management Functions • • DC-DC Converters • ® Case: POWERDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 S • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.008 grams (approximate) D Pin 1 S S G G D ESD PROTECTED D D D Bottom View Top View Internal Schematic Gate Protection Diode S Ordering Information (Note 4) Part Number DMT6008LFG-7 DMT6008LFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information S6E = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 13 = 2013) WW = Week code (01 ~ 53) DMT6008LFG Document number: DS36680 Rev. 2 - 2 1 of 6 www.diodes.com July 2014 © Diodes Incorporated DMT6008LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V VDSS Value 60 Units V VGSS ±12 V TA = +25°C TA = +70°C ID 13 11 A TC = +25°C TC = +70°C ID 60 48 A A Maximum Continuous Body Diode Forward Current (Note 5) IS 3 Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 80 A Avalanche Current (Note 6) IAS 13 A Avalanche Energy (Note 6) EAS 25 mJ Value 2.2 Units Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) PD RθJC 41 58 35 3 TJ, TSTG -55 to +150 TC = +25°C Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) RθJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 60 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 48V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS — — ±10 μA VGS = ±10V, VDS = 0V VGS(th) 0.7 — 2.0 V VDS = VGS, ID = 250μA — 5.0 7.5 RDS(ON) — 6.5 11.5 — 19 — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD — 0.9 1.2 Ciss — 2713 — Output Capacitance Coss — 822 — Reverse Transfer Capacitance Crss — 57 — Gate Resistance Rg — 0.54 — Total Gate Charge (VGS = 4.5V) Qg — 22.4 — Total Gate Charge (VGS = 10V) Gate-Source Charge Qg — 50.4 — Qgs — 9.6 — Static Drain-Source On-Resistance Gate-Drain Charge Qgd — 7.8 — Turn-On Delay Time tD(on) — 7.0 — Turn-On Rise Time tr — 4.4 — Turn-Off Delay Time tD(off) — 24.4 — tf — 7.0 — Turn-Off Fall Time Notes: VGS = 10V, ID = 20A mΩ VGS = 4.5V, ID = 20A VGS = 3V, ID = 3A V VGS = 0V, IS = 20A pF VDS = 30V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 30V, ID = 20A nS VDD = 30V, VGS = 10V, ID = 20A, RG = 3Ω, 5. RΘJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RθJC is guaranteed by design while RΘJA is determined by the user’s board design. 6 .UIS in production with L = 0.3mH, TJ = +25°C 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT6008LFG Document number: DS36680 Rev. 2 - 2 2 of 6 www.diodes.com July 2014 © Diodes Incorporated DMT6008LFG 30 30.0 VDS = 5.0V 25.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V 20.0 20 VGS = 4.0V VGS = 3.5V 15.0 VGS = 3.0V TA = 125°C T A = 85°C T A = 25°C 10 5.0 TA = -55°C 5 0.0 0.00 VGS = 2.5V 0.50 1.00 1.50 2.00 2.50 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0 3.00 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.0 0.09 0.08 VGS = 3.0V 0.07 0.1 0.06 0.05 0.04 VGS = 4.5V 0.01 0.03 VGS = 10V ID = 20A 0.02 0.01 0.001 0 0.016 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage T A = 150°C TA = 125°C 0.012 T A = 85°C 0.01 0.008 T A = 25°C TA = -55°C 0.006 0.004 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMT6008LFG Document number: DS36680 Rev. 2 - 2 ID = 3.0A 2 3 4 5 6 7 8 9 10 11 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 12 2 VGS = 4.5V 0.014 0.002 0.00 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = 150°C 15 10.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 25 VGS = 10V 30 3 of 6 www.diodes.com VGS = 10V ID = 10A 1.6 VGS = 4.5V ID = 5A 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature July 2014 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.4 0.014 0.012 VGS = 4.5V ID = 5A 0.01 0.008 VGS = 10V ID = 10A 0.006 0.004 0.002 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 2.2 2 1.8 1.2 1 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 1000 25 100 15 10 TA = 150°C T A = 85°C 5 T A = 125°C 0 TA = 25°C r(t), TRANSIENT THERMAL RESISTANCE PW = 100µs 10 DC 1 PW = 10s PW = 1s 0.1 TJ(max) = 150°C PW = 100ms PW = 10ms PW = 1ms VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1 RDS(on) Limited 0.01 TA = 25°C TA = -55°C 0 ID = 250µA 1.4 30 20 ID = 1mA 1.6 -ID, DRAIN CURRENT (A) IS, SOURCE CURRENT (A) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT DMT6008LFG 0.001 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 SOA, Safe Operation Area 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 0.01 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 122°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 DMT6008LFG Document number: DS36680 Rev. 2 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance 4 of 6 www.diodes.com 100 1000 July 2014 © Diodes Incorporated DMT6008LFG Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ® A POWERDI 3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A3 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT A1 D D2 Pin 1 ID 1 L (4x) 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions C G G1 Y Y1 Y2 Y3 X X2 G Y2 8 5 G1 Y1 Y 1 4 Y3 X2 DMT6008LFG Document number: DS36680 Rev. 2 - 2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C 5 of 6 www.diodes.com July 2014 © Diodes Incorporated DMT6008LFG IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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