DMG10N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) Package ID TC = +25°C 600V 0.75Ω@VGS = 10V TO220AB (Type TH) 12A Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Mechanical Data Applications Motor Control Backlighting DC-DC Converters Power Management Functions Case: TO220AB (Type TH) Case Material: Molded Plastic, “Green” Molding Compound, UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 1.85 grams (Approximate) TO220AB (Type TH) ESD PROTECTED Top View Equivalent Circuit Bottom View Top View Pin Out Configuration Ordering Information (Note 4) Part Number DMG10N60SCT Notes: Case TO220AB (Type TH) Packaging 50 pieces/tube 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 10N60SCT = Manufacturer’s Marking 10N60SCT = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 16 = 2016) WW or WW = Week Code (01 to 53) YYWW DMG10N60SCT Document number: DS38891 Rev. 3 - 2 1 of 7 www.diodes.com December 2016 © Diodes Incorporated DMG10N60SCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 5) VGS = 10V TC = +25°C TC = +100°C ID Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current, L = 60mH (Note 6) Avalanche Energy, L = 60mH (Note 6) IS IDM IAS EAS Value 600 ±30 12 7.9 15 15 4.3 550 Units V V Value 178 71 49 0.7 Units -55 to +150 °C A A A A mJ Thermal Characteristics Characteristic Symbol TC = +25°C TC = +100°C Total Power Dissipation (Note 5) PD Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RJA RJC TJ, TSTG W °C/W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 600 1 10 V µA µA VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = ±24V, VDS = 0V VGS(TH) RDS(ON) VSD 2 4 0.75 1 V Ω V VDS = VGS, ID = 250µA VGS = 10V, ID = 5A VGS = 0V, IS = 1A Ciss Coss Crss RG Qg Qgs Qgd pF VDS = 25V, f = 1.0MHz, VGS = 0 Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 480V, ID = 10A, VGS = 10V ns VDS = 300V, RG = 25Ω, ID = 10A, VGS = 10V tD(ON) tR tD(OFF) tF tRR QRR 3.2 0.6 1587 149 10 1.5 35 6 13 25 45 97 48 319 3.5 ns C Test Condition VDS = 100V, IF = 10A ,dI/dt = 100A/μs 5. Device mounted on an infinite heatsink. 6. Guaranteed by design. Not subject to production testing. 7. Short duration pulse test used to minimize self-heating effect. DMG10N60SCT Document number: DS38891 Rev. 3 - 2 2 of 7 www.diodes.com December 2016 © Diodes Incorporated DMG10N60SCT 10.0 5 VGS = 6V VDS = 10V VGS = 8V 8.0 4 VGS = 5V VGS = 10V 7.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 9.0 6.0 5.0 4.0 VGS = 4.5V 3.0 2.0 VGS = 4.2V 3 2 VGS = 4V 25oC 125oC 1.0 0 2 4 6 8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.9 0.8 0.7 0.6 0 10 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () -55oC 0 0.0 VGS = 10V 0.5 0.4 0.3 0.2 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 8 6 5 4 3 2 ID = 5A 1 0 0 2 3 4 5 6 7 8 9 10 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 1 0 5 10 15 20 25 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 30 3 2 VGS = 10V 1.8 150oC 1.6 1.4 125oC 1.2 1 85oC 0.8 0.6 25oC 0.4 0.2 -55oC RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 85oC 150oC 1 2.5 2 1.5 1 VGS = 10V, ID = 5A 0.5 0 0 0 1 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMG10N60SCT Document number: DS38891 Rev. 3 - 2 -50 3 of 7 www.diodes.com -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature December 2016 © Diodes Incorporated 2 5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMG10N60SCT 1.8 1.6 1.4 1.2 1 0.8 0.6 VGS = 10V, ID = 5A 0.4 0.2 0 4 ID = 1mA 3 ID = 250µA 2 1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -50 10 10000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 9 IS, SOURCE CURRENT (A) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 8 7 6 TJ = 150oC 5 TJ = 125oC 4 TJ = 85oC 3 TJ = 25oC 2 TJ = -55oC 1 Ciss 1000 Coss 100 10 Crss 0 1 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 30 100 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) 6 VDS = 480V, ID = 10A 4 PW = 1µs 10 PW = 1s 1 PW = 100ms PW = 10ms PW = 1ms TJ(Max) = 150℃ PW = 100µs TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS = 10V 0.1 2 0 PW = 10µs 0.01 0 5 10 15 20 25 Qg (nC) Figure 11. Gate Charge DMG10N60SCT Document number: DS38891 Rev. 3 - 2 30 35 1 4 of 7 www.diodes.com 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 1000 December 2016 © Diodes Incorporated DMG10N60SCT 1 D=0.9 D=0.5 r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC (t) = r(t) * RθJC RθJC = 0.73℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMG10N60SCT Document number: DS38891 Rev. 3 - 2 5 of 7 www.diodes.com December 2016 © Diodes Incorporated DMG10N60SCT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO220AB (Type TH) Eb A Ø P A1 Q H1 01 E E2b E2a D D2a D2 D1 A2 E2 01 02 L1 b2 b L C1 e 02(2x) e1 C Ea DMG10N60SCT Document number: DS38891 Rev. 3 - 2 6 of 7 www.diodes.com TO220AB (Type TH) Dim Min Max Typ A 4.27 4.87 4.57 A1 1.12 1.42 1.27 A2 2.39 2.99 2.69 b 0.70 1.01 0.81 b2 1.17 1.50 1.27 c 0.30 0.53 0.38 c1 0.38 0.72 0.56 D 14.60 15.40 15.00 D1 8.40 9.00 8.70 D2 5.33 6.63 6.33 D2a 4.54 5.84 5.54 e 2.54 BSC e1 5.08 BSC E 9.88 10.50 10.16 Ea 9.90 10.45 10.10 Eb 9.90 10.65 10.25 E2 7.06 8.36 8.06 E2a 6.67 7.97 7.67 E2b 4.94 6.24 5.94 H1 5.70 6.65 6.30 L 13.00 13.80 13.40 L1 4.10 3.75 Q 2.50 2.99 2.74 ØP 3.70 3.99 3.84 θ1 4° 10° 7° θ2 0° 6° 3° All Dimensions in mm December 2016 © Diodes Incorporated DMG10N60SCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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