Rohm BD8665GW Integrated input detection Datasheet

Datasheet
Battery Charger IC Series
Boost DC/DC Charger
With Input Current Limiter
BD8664GW
BD8665GW
BD8668GW
General Description
Key Specifications
 Input Current Accuracy
±2%(BD8664GW)
±3%(BD8665GW/BD8668GW)
±0.5%
 Charging Voltage Accuracy
 Selectable Input Current
100mA/500mA/900mA/1500mA (max)
 Charging frequency
1MHz (typ)
 Input Standby Current
71µA(typ)
 battery leakage current while charging is off 0µA(typ)
BD8664GW, BD8665GW and BD8668GW are lithium-ion
battery charger IC’s, suitable for charging 2S batteries
from a 5V source, such as a USB port with DC/DC boost
topology.
Features








CP/CV Charging
Charge-On/ Off control available with EN pin
Integrated Input Detection (VBUSOK)
Integrated Power Good
Boost Switching Topology
Low Ron integrated MOSFET
Output Short Circuit Protection
0.4mm pitch Chip Scale Package (UCSP75M2)
Package
W(Typ) x D(Typ) x H(Max)
2.20mm x 2.20mm x 0.85mm
UCSP75M2
Line Up
Charge
Voltage
Applications
Package
8.30V
DVC, DSC, MID and other Lithium battery-powered
portable devices
8.40V
USCP75M2
Pin
number
Orderable
Part Number
BD8664GW
20
BD8665GW
25
BD8668GW
Typical Application Circuit
VBUS+
D+
D-
OVP
VBUS
BC1.2
Detector
ISNS
ICOMP
VBUSLIM
VCOMP
FSET
SW1
EN
SDA
SCL
ISETIN1
BD8664GW
BD8665GW
BD8668GW
ISETIN2
SW2
ISETIN3
HOST
ACLEN
SYSTEM
VFB
PGOOD
VBUSOK
Controled by HOST
ISETOUT1
FSET
ISETOUT2
GND
BATTERY+
PGND
Figure 1. Typical Application
Circuit
〇Product structure : Silicon monolithic integrated circuit
© 2015 ROHM Co., Ltd. All rights reserved.
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〇This product has no designed protection against radioactive rays
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Contents
General Description ...................................................................................................................................................................... 1
Features ......................................................................................................................................................................................... 1
Applications .................................................................................................................................................................................. 1
Key Specifications ........................................................................................................................................................................ 1
Package
W(Typ) x D(Typ) x H(Max) ................................................................................................................................. 1
Line Up........................................................................................................................................................................................... 1
Typical Application Circuit ........................................................................................................................................................... 1
Pin Configuration (TOP VIEW) ..................................................................................................................................................... 3
Pin Description ............................................................................................................................................................................. 3
Block Diagram............................................................................................................................................................................... 5
Absolute Maximum Ratings (Ta=25°C) ....................................................................................................................................... 6
Recommended Operating Conditions (Ta=-30 to +85°C)........................................................................................................... 6
Electrical Characteristics ............................................................................................................................................................. 7
Typical Performance Curves ........................................................................................................................................................ 9
Reference Data ............................................................................................................................................................................ 14
Block Descriptions ..................................................................................................................................................................... 16
Timing Chart/Application Information....................................................................................................................................... 18
Application Components Selection........................................................................................................................................... 21
Example of Recommended Circuit ............................................................................................................................................ 22
Input/Output Pin Immediate Circuit ........................................................................................................................................... 23
Thermal Reduction Characteristics .......................................................................................................................................... 25
Operational Notes ....................................................................................................................................................................... 26
Ordering Information .................................................................................................................................................................. 28
Marking Diagrams ....................................................................................................................................................................... 28
Physical Dimensions, Tape and Reel information ................................................................................................................... 29
Revision History ......................................................................................................................................................................... 32
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BD8665GW
BD8668GW
Pin Configuration (TOP VIEW)
BD8664GW / BD8665GW
A
EN
VBUS
B
ICOMP
VBUS
OK
C
FSET
D
VCOMP
E
ISNS
BD8668GW
PGOOD
VBUSLIM
A
VBUS
VBUS
ISNS
PGOOD
VBUSLIM
ISETIN
1
ISETIN
3
B
ICOMP
EN
ISETIN
3
VBUS
OK
SW1
SW1
C
FSET
ISETIN
1
ISETIN
2
ISET
OUT2
PGND
PGND
D
GND
GND
VCOMP
VFB
SW2
E
ISETIN
2
ISET
OUT2
ACLEN
GND
ISET
OUT1
VFB
SW2
1
2
3
4
5
ACLEN
GND
GND
VFB
ISET
OUT1
1
2
3
4
5
Pin Description
BD8664GW / BD8665GW
No.
Name
I/O
A1
EN
I
Charging ON/OFF
A2
VBUS
I
Power input
A3
ISNS
I
Current sensing
A4
PGOOD
O
Power GOOD output
A5
VBUSLIM
O
VBUS current limiter output
B1
ICOMP
O
Pin for phase compensation of constant current
B2
VBUSOK
O
VBUSOK output
B3
-
-
-
B4
ISETIN1
I
Current setting pin1
B5
ISETIN3
I
Current setting pin3
C1
FSET
I
Frequency setting pin
C2
-
-
-
C3
-
-
-
C4
-
-
-
C5
SW1
O
Inductor connection pin1
D1
VCOMP
O
Pin for phase compensation of constant current connection
D2
ISETIN2
I
Current setting pin2
D3
-
-
-
D4
ISETOUT2
O
Current setting output2
D5
PGND
I
Power GND(0.0V)
E1
ACLEN
I
Automatic current ON/OFF
E2
GND
I
GND(0.0V)
E3
ISETOUT1
O
Current setting output 1
E4
VFB
I
Feedback pin of CV charging voltage
E5
SW2
O
Inductor connection pin2
Description
selection pin
No upper ESD protection diodes are connected to ISETIN1, ISETIN2, ISETIN3, and EN.
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Pin Description – continued
BD8668GW
No.
Name
I/O
A1
VBUS
I
Power input
A2
VBUS
I
Power input
A3
ISNS
I
Current sensing
A4
PGOOD
O
Power GOOD output
A5
VBUSLIM
O
VBUS current limiter output
B1
ICOMP
O
Pin for phase compensation of constant current
B2
EN
I
Charging ON/OFF
B3
ISETIN3
I
Current setting pin3
B4
VBUSOK
O
VBUSOK output
B5
SW1
O
Inductor connection pin1
C1
FSET
I
Frequency setting pin
C2
ISETIN1
I
Current setting pin1
C3
ISETIN2
I
Current setting pin2
C4
ISETOUT2
O
Current setting output2
C5
PGND
I
Power GND (0.0V)
D1
GND
I
GND (0.0V)
D2
GND
I
GND (0.0V)
D3
VCOMP
O
Pin for phase compensation of constant current connection
D4
VFB
I
Feedback pin of CV charging voltage
D5
SW2
O
Inductor connection pin2
E1
ACLEN
I
Automatic current ON/OFF selection pin
E2
GND
I
GND (0.0V)
E3
GND
I
GND (0.0V)
E4
VFB
I
Feedback pin of CV charging voltage
E5
ISETOUT1
O
Current setting output 1
Description
No upper ESD protection diodes are connected to ISETIN1, ISETIN2, ISETIN3, and EN.
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BD8665GW
BD8668GW
Block Diagram
(VBUS)
VBUS
ISNS
Level Shifter
ON/OFF
EN
Internal REG
VBUSLIM
CP Error Amplifier
P
200mA
ICOMP
20Ω
(typ)
P
OCP
ISETIN1
1msec
SW1
Load SW
ISETIN2
N
ISETIN3
PGND
Driver
Reference Voltage
Control
ISETOUT1
SW2
CP/CV
Control
ISETOUT2
P
ACLEN
VCOMP
SCP Detection
2.6V
Ramp up by VBUS
Internal
REG
3V
VBUSOK
PGOOD
VBUSLIM soft-start ends
50msec after charging starts
(VFB)
CV Error Amplifier
VFB
Oscillator
500kHz～2MHz
FSET
(GND)
(GND)
(GND)
GND
( ): NC in BD8665.
Figure 2. Block Diagram
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Absolute Maximum Ratings (Ta=25°C)
Item
Symbol
VBUS Voltage
VVBUS
VBUSLIM Voltage
VVBUSLIM
Range
Unit
-0.3 to +7.0
V
-0.3 to VBUS+0.3 (Note 3)
V
VFB Voltage
VVFB
-0.3 to +13.0
V
SW1 Voltage
VSW1
-0.3 to VBUSLIM+0.3 (Note 4)
V
SW2 Voltage
VSW2
-0.3 to VFB+0.3
V
Terminal Voltage 1 (Note 1)
VINOUT1
-0.3 to VBUS+0.3 (Note 3)
V
(Note 2)
VINOUT2
-0.3 to +6.0
V
VINOUT3
-0.3 to +0.3
V
1.00
W
Terminal Voltage 2
Voltage Between Terminals
(Note 5)
Maximum Power Dissipation
(Note 6)
Pd
Operating Temperature
Topr
-30 to +85
°C
Storage Temperature
Tstg
-55 to +150
°C
Junction Temperature
Tjmax
+150
°C
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
Caution:
ISNS, FSET, VBUSOK, PGOOD, VCOMP, ICOMP, ISETOUT1, ISETOUT2
ACLEN, EN, ISETIN1, ISETIN2, ISETIN3
7.0V against GND
7.0V against PGND
GND-PGND, VBUS-ISNS
When mounted on 54mm x 62mm PCB. Pd decreases by 8mW per 1°C when Ta is 25°C or higher.
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Recommended Operating Conditions (Ta=-30 to +85°C)
Value
Item
Symbol
Part No.
5.5
V
-
10.0
V
Typ
Max
5.0
VBUS Voltage
VVBUS
4.1
VFB Voltage
VVFB
0.0
8.4
8.3
© 2015 ROHM Co., Ltd. All rights reserved.
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Unit
Min
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BD8665GW/BD8668GW
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BD8665GW
BD8668GW
Electrical Characteristics
(Unless otherwise specified, VVBUS=5.0V VVFB=7.4V VISETIN1,2,3=0V GND=PGND=0V
Value
Item
Symbol
Min
Typ
Max
VBUS Stand-by Current
IVBUS1
71
142
VBUS Operational Current
IVBUS2
2
5
Battery Stand-by Current
IBATT1
-1
0
+1
Battery Operational Current
IBATT2
60
120
Frequency 1
FOSC1
0.9
1.0
1.1
Frequency 2
FOSC2
(1.8)
2.0
(2.2)
FSET Output Voltage
VFSET
0.6
<Constant Voltage Control Block>
VCV2
8.258
8.300
8.342
Constant Voltage Charging
Accuracy
VCV2
8.358
8.400
8.442
< VBUSLIM Current Control Block>
IVBUSLIM1
6.0
8.0
10.0
IVBUSLIM2
47.0
48.5
50.0
85.2
IVBUSLIM3
VBUSLIM Current Accuracy
(VBUS-ISNS Voltage)
Unit
μA
mA
μA
μA
MHz
MHz
84.0
142.1
VEN= 0.0V, Only VBUSOK is ON
No Switching
VEN= 0.0V
No Switching
RFSET= 47kΩ
RFSET= 22kΩ
V
V
±0.5%, BD8664GW
±0.5%, BD8665GW/BD8668GW
mV
mV
VISETIN1 = 0.0V, VISETIN2 = 0.0V
VISETIN1 = 0.0V, VISETIN2 = 3.3V
VISETIN1 = 3.3V, VISETIN2 = 0.0V
BD8664GW, ±2%
VISETIN1 = 3.3V, VISETIN2 = 0.0V
BD8665GW/BD8668GW, ±3%
VISETIN1 = 3.3V, VISETIN2 = 3.3V
BD8664GW, ±2%
VISETIN1 = 3.3V, VISETIN2 = 3.3V
BD8665GW/BD8668GW, ±3%
88.8
mV
90.0
mV
147.9
mV
150.0
mV
145.0
140.0
Conditions
V
87.0
IVBUSLIM4
VBUSLIM Current Limiter
Level (VBUS-ISNS Voltage)
< PGOOD Block>
PGOOD H Voltage
PGOOD L Voltage
<VBUSOK Pin >
VBUS Threshold 1
VBUS Threshold 2
VBUSOK L->H Delay Time
VBUSOK H Voltage
VBUSOK L Voltage
<Comparator Block>
VBUS UVLO Threshold
VBUS UVLO Unlock
Threshold Voltage
VFB Low Voltage Detection1
VFB Low Voltage Detection2
VFB Overvoltage Detection1
VFB Overvoltage Detection2
VBUS Current Automatic
Selection Voltage 1
VBUS Current Automatic
Selection Voltage 1
<Power MOSFET>
VBUSLIM-SW1 PMOS Ron
VBUSLIM-SW1small PMOS Ron
SW2-PGND NMOS Ron
SW2 Max Duty Width
SW2 Min Duty Ratio
Ta=25°C)
IVBUSOCP
(+15)
+20
(+30)
mV
VPGOODH
VPGOODL
2.94
-
3.00
0.0
3.06
-
V
V
VVBUSOKTH1
VVBUSOKTH2
VVBUSOKDELAY
VVBUSOKH
VVBUSOKL
3.9
3.8
20
2.94
-
4.0
3.9
40
3.00
0.0
4.1
4.0
3.06
-
V
V
ms
V
V
VVBUSUVLOON
3.40
3.60
3.80
V
VVBUSUVLOFF
3.50
3.70
3.90
V
VVFBLV1
VVFBLV2
VVFBOV1
VVFBOV2
8.5
9.2
2.4
2.6
9.0
9.7
9.5
10.2
V
V
V
V
VFB = H to L
VFB = L to H
VFB = H to L
VFB = L to H
VVBUSAUTOTH
3.9
4.0
4.1
V
VBUS = H to L
VVBUSAUTOTH
4.0
4.1
4.2
V
VBUS = L to H
RSW1A
RSW1B
RSW2
-
70
20
60
80
0
-
mΩ
Ω
mΩ
ns
％
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Against The Current Set By VBUSLIM
±2%
VBUS = L to H
VBUS = H to L
±2%
ISW1＝-10mA
ISW1＝-10mA
ISW2＝10mA
RFSET= 47kΩ
RFSET= 47kΩ
TSZ02201-0A1A0AZ00130-1-2
15.Apr.2015 Rev.001
BD8664GW
BD8665GW
BD8668GW
Electrical Characteristics - continued
<Input/ Output>
EN/ISETIN1,2,3/ACLEN
L Voltage
EN/ISETIN1,2,3/ACLEN
H Voltage
ISETIN1,2 Input Current
EN/ACLEN/ISETIN3
Pull-Down Resistor
ISETOUT1,2 L Voltage
ISETOUT1,2 H Voltage
VINL
-
-
0.4
V
VINH
2.5
-
5.5
V
IINH
-
0
-
μA
RIN2
300
500
700
kΩ
VOUTL
VOUTH
2.94
0.0
3.00
3.06
V
V
No Pull-Down, Open Is Not Allowed.
This product has no designed protection against radioactive rays.
Pd is the maximum power. Please keep the current to meet power lower than the Pd.
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BD8668GW
Typical Performance Curves
(Unless otherwise specified, VVBUS=5.0V VVFB=7.4V VISETIN1,2,3=0V GND=PGND=0V Ta=25°C)
VVFB
2.0V/div.
VVFB
2.0V/div.
IVBUS
0.5A/div.
IVBUS
0.5A/div.
VICOMP
0.5V/div.
VICOMP
0.5V/div.
10ms/div.
10ms/div.
Figure 4. Feeding Mode Ramp-up (50Ω Load)
Figure 3. Feeding Mode Ramp-up (No Load)
VVFB
2.0V/div.
VVFB
2.0V/div.
IVBUS
0.2A/div.
IVBUS
0.1A/div.
VICOMP
0.5V/div.
VICOMP
0.5V/div.
10ms/div.
10ms/div.
Figure 6. Charging Mode Start-up
(100mA mode)
Figure 5. Start-up Waveform
(VFB is Shorten to Ground)
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Typical Performance Curves - continue
(Unless otherwise specified, VVBUS=5.0V VVFB=7.4V VISETIN1,2,3=0V GND=PGND=0V Ta=25°C)
VVFB
2.0V/div.
VVFB
2.0V/div.
IVBUS
0.5A/div.
IVBUS
0.5A/div.
VICOMP
0.5V/div.
VICOMP
0.5V/div.
10ms/div.
10ms/div.
Figure 8. Charging Mode Start-up
(900mA Mode)
Figure 7. Charging Mode Start-up
(500mA Mode)
VVFB
2.0V/div.
VVFB
2.0V/div.
IVBUS
0.5A/div.
IVBUS
0.5A/div.
VICOMP
0.5V/div.
VICOMP
0.5V/div.
1ms/div.
10ms/div.
Figure 9. Charging Mode Start-up
(1500mA Mode)
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Figure 10. Changing Current
(100mA to 500mA)
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Typical Performance Curves - continue
(Unless otherwise specified, VVBUS=5.0V VVFB=7.4V VISETIN1,2,3=0V GND=PGND=0V Ta=25°C)
VVFB
2.0V/div.
VVFB
2.0V/div.
IVBUS
0.5A/div.
IVBUS
0.5A/div.
VICOMP
0.5V/div.
VICOMP
0.5V/div.
1ms/div.
1ms/div.
Figure 12. Changing Current
(900mA to 1500mA)
Figure 11. Changing Current
(500mA to 900mA)
VVFB
2.0V/div.
VVFB
2.0V/div.
IVBUS
0.5A/div.
IVBUS
0.5A/div.
VICOMP
0.5V/div.
VICOMP
0.5V/div.
1ms/div.
Figure 13. Changing Current
(100mA to 1500mA)
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1ms/div.
Figure 14. Changing Current
(1500mA to 500mA)
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Typical Performance Curves - continue
(Unless otherwise specified, VVBUS=5.0V VVFB=7.4V VISETIN1,2,3=0V GND=PGND=0V Ta=25°C)
VEN
10V/div.
VVBUS
2.0V/div.
VVFB
2.0V/div.
IVBUS
0.5A/div.
IVBUS
0.5A/div.
VISETOUT1
5.0V/div.
VISETOUT2
5.0V/div.
VICOMP
0.5V/div.
5ms/div.
20ms/div.
Figure 15. Changing Current
(1500mA to 100mA)
Figure 16. Automatically Changing Current
(1500mA to 900mA)
VEN
10V/div.
VVBUS
2.0V/div.
VEN
10V/div.
VVBUS
2.0V/div.
IVBUS
0.5A/div.
IVBUS
0.5A/div.
VISETOUT1
5.0V/div.
VISETOUT2
5.0V/div.
VISETOUT1
5.0V/div.
VISETOUT2
5.0V/div.
20ms/div.
20ms/div.
Figure 18. Automatically Changing Current
(500mA to 100mA)
Figure 17. Automatically Changing Current
(900mA to 500mA)
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Typical Performance Curves - continue
(Unless otherwise specified, VVBUS=5.0V VVFB=7.4V VISETIN1,2,3=0V GND=PGND=0V Ta=25°C)
VVBUS
2.0V/div.
VVBUSOK
1.0V/div.
10ms/div.
Figure 19. VBUSOK (L to H Delay Time)
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Reference Data
(Unless otherwise specified, VVBUS=5.0V VVFB=7.4V VISETIN1,2,3=0V GND=PGND=0V Ta=25°C )
8.34
49.5
8.32
49.0
VFB Voltage[V]
VBUS-ISNS Voltage [mV]
50.0
48.5
4.1V
48.0
5.0V
8.30
4.1V
5.0V
8.28
5.5V
5.5V
47.5
8.26
47.0
-30
-15
0
15
30
45
60
75
-30
90
-15
0
15
30
45
60
75
90
Temperature[℃]
Temperature[℃]
Figure 21. CV Voltage VBUS Voltage Dependency
(BD8664GW)
Figure 20. CV Voltage vs Temperature
50.0
8.44
VBUS-ISNS Voltage[mV]
49.5
8.40
VFB
Voltage[V]
8.42
4.1V
5.0V
8.38
49.0
48.5
48.0
47.5
5.5V
47.0
8.36
-30
-15
0
15
30
45
60
75
-30
90
Temperature[℃]
0
15
30
45
60
75
90
Temperature[℃]
Figure 22. CV Voltage VBUS Voltage Dependency
(BD8665GW/BD8668GW)
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Figure 23. 500mA Mode CP
Current Temperature Characteristic
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50.0
3.06
49.5
3.04
49.0
3.02
PGOOD Voltage[V]
VBUS-ISNS Voltage[mV]
Reference Data - continue
(Unless otherwise specified, VVBUS=5.0V VVFB=7.4V VISETIN1,2,3=0V GND=PGND=0V Ta=25°C)
48.5
48.0
4.1V
5.0V
5.5V
47.5
3.00
2.98
2.96
47.0
2.94
-30
-15
0
15 30 45 60
Temperature[℃]
75
90
-30
Figure 24. 500mA Mode CP
Current VBUS Dependency
-15
0
15 30 45
60
Temperature[℃]
75
90
Figure 25. PGOOD Pin H Voltage Temperature
Characteristic
100
1.10
90
80
70
Efficiency[%]
Frequency[MHｚ]
1.05
1.00
60
50
40
30
0.95
20
10
0
0.90
-30
-15
0
15
30
45
60
75
90
Temperature[℃]
0.01
0.1
1
load[A]
Figure 26. Frequency Temperature
Characteristic
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Figure 27. Efficiency 500mA Mode
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Block Descriptions
1.
VBUS Input Detection Comparator Output (VBUSOK)
VBUS voltage can set VBUSOK. 40ms after detecting that VBUS is higher than 4.0V (typ), VBUSOK turns H (3.0V [typ]).
In case VBUS ramps down, and reaches 3.9V (typ), VBUSOK turns L without any delay. The function works
independently from the condition of EN and thermal shut down.
VBUS
VBUSOK
< 3.9V (typ)
>= 4.0V (typ)
L 0.0V (typ)
H 3.0V (typ)
2.
Charging ON/OFF (EN)
ON/OFF is controlled with the EN pin. When EN is L, the IC enters shutdown mode (or USB suspend mode), the battery
leakage current is set to 0µA, and all other functions but VBUSOK turns off. EN pin is connected to a 500kΩ (typ)
pull-down resistor.
3.
USB Current Setting (ISETIN1,2,3)
ISET1
ISET2
ISET3
VBUS Input Current Settings
L
L
L
L
L
H
100mA (max)
500mA (max)
L
L
H
H
L
H
500mA (max)
500mA (max)
H
H
L
L
L
H
900mA (max)
900mA (max)
H
H
H
H
L
H
1500mA (max)
1500mA (max)
Note: Open is NOT allowed for ISETIN1,2 pins. No pull-down resistor is connected to ISETIN1, 2 pins. 500kΩ (typ) pull-down resistor is internally connected
to ISETIN3.
4.
VBUS Current Setting (ISETOUT1,2)
ISETOUT1
ISETOUT2
VBUS Current Settings
L
L
L
H
100mA (max)
500mA (max)
H
H
L
H
900mA (max)
1500mA (max)
Note: 500kΩ(typ) is connected internally to ISETOUT1,2. Even in the case VBUS=0V, the output stays stable.
5.
Frequency Setting (FSET)
The PWM switching frequency can be set.
FSET
PWM
100kΩ
47kΩ
500kHz (typ)
1MHz (typ)
33kΩ
22kΩ
1.5MHz (typ)
2MHz (typ)
6.
CV Control Soft-Start
If the system boots up with NO battery, CV control method suppresses the 8.3V (typ) in case of using BD8664GW and
8.4V (typ) in case of using BD8665GW/BD8668GW, on VFB pin, and enters “feeding mode”. In this mode, it will take
40ms (typ) for the VFB to reach 8.4V (typ).
7.
Load Switch Function
A PMOS load switch is integrated between VBUSLIM and SW1. When EN=L, the load switch turns off. If a low battery is
connected, charging can be stopped. The integrated load resistors are 20Ω (typ) and 70mΩ (typ). The higher resistance
is connected during start-up. After 10ms (typ), the lower resistance is connected if no short circuit is detected by VFB pin.
8.
OCP for Load Switch
Through a sense resistor between VBUS and ISNS, over-current can be detected while the load switch is on. If the
over-current is constantly detected for more than 1ms, the load switch turns off and latches. To unlatch, the IC must be
rebooted by switching EN to low, then back to high; or set VBUS to a voltage lower than UVLO, then back to the
operating VBUS voltage.
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9.
BD8665GW
BD8668GW
Battery Low Voltage Detection (Output SCP)
If during start-up, the battery’s voltage is lower than VFB voltage or the output is shorted to ground, the low-side load
switch will never be turned on, and the high-side load switch will be on for 80ms (typ). But, if the high-side load switch is
kept on for more than 80ms, the load switch is turned off. This function is off after the PGOOD is turned H.
10. Power Good (PGOOD)
The IC is enabled by EN pin. After CV, CP, and soft start, PGOOD condition changes its state from L to H. Inversely,
during thermal shutdown and overvoltage battery, PGOOD is L.
11. Battery Overvoltage Detection
Due to the VBUS current limiter, overvoltage can occur at VFB terminal during CP charging. This can cause damage to
devices that are connected to the IC. To prevent this, overvoltage protection is integrated. Once overvoltage is detected,
SW2 becomes Hi-Z, the error amp output and soft start are reset to default, and PGOOD is set L. Once VFB voltage is at
a safe level, the IC automatically restarts with soft start.
12. Auto VBUS Current Setting
Once VBUS voltage exceeds 4.1V (typ), the VBUS current set to ISET1 to 3 pins are automatically changed from
1500mA (max) to 900mA (max), from 900mA (max) to 500mA (max), and from 500mA (max) to 100mA (max), while
VBUS is continuously monitored. If ISET1 to 3 are changed after the auto change is done, the initial current that has been
set to ISET1 to 3 will be employed again.
Notes:
(1) If VBUS voltage remains lower than 4.1V and current is changed from 1500mA to 900mA, the current will not be
changed to 500mA.
(2) ACLEN has a pull-up resistor. The pin is L if it is open and auto setting becomes active.
(3) It can be turned off by setting ACLEN to H.
(4) It starts to work after the lower resistance load is turned on. Until PGOOD is changed to H, the bus current value
is determined only by ISETIN1 to 3 and will not to be changed by VFB low voltage function.
13. Feeding Mode and Charging Mode
Feeding Mode: If the system boots up with NO battery to the IC, CV control method suppresses 8.3V (typ) for
BD8664GW and 8.4V (typ) for BD8665GW/BD8668GW on VFB pin. During the feeding mode, the constant voltage is
done by the VFB pin.
Charging Mode: If the system boots up with a battery to the IC, CP/CV control method is employed. During charging
mode, the CV/CP function is applied to the battery. The two modes, however, are not internally controllable by the IC. An
application that applies constant output voltage with CV charging is called “feeding mode” and another application that
charges with CV/ CP charging is called “charging mode” in this technical note.
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Timing Chart/Application Information
1.
VBUSOK/VBUS Threshold at Automatic Change Current Setting
VBUS
VBUS端子電圧
4.1V(AutoCurrentLimit有効となる)
4.1V
(threshold for auto current limit)
4.0V(AutoCurrentLimit電流下げる=VBUSOK立ち上がり)
3.9V(VBUSOK立ち下がり)
4.0V (threshold for auto current limit, current decreases at
3.7V(VBUSUVLO立上り)
3.6V(VBUSUVLO立下り)
rising of VBUS)
3.9V (VBUSOK falling)
3.7V (VBUSUVLO rising)
VBUSOK
VBUSOK
3.6V (VBUSUVLO falling)
USB電流
Set USB
current
設定
USB電流自動切換え
Automatic
change on USB
current
Figure 28. VBUSOK/VBUS Threshold at Automatic Change Current Setting waveform
1.
Start-up Waveform at Feeding Mode (No Battery, Light Load)
8.4V
VFB
Boost mode
VBUS
40msec(typ)
ISETOUT
Automatic change on USB current
40msec(typ)
VBUSOK
EN
20 OHM load switch
gate signal
Lower resistance
load switch gate
signal
ON
OFF
10msec(typ)
ON
OFF
70msec(typ)
PGOOD
Figure 29. Start-up Waveform at Feeding Mode
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Start-up Waveform at Feeding Mode (No Battery, 50Ω Load)
2.
8.4V
VFB
Boost mode
VBUS
40msec(typ)
ISETOUT
Automatic change on USB current
40msec(typ)
VBUSOK
EN
20 OHM load switch
gate signal
Lower resistance
load switch gate
signal
ON
OFF
10msec(typ)
ON
OFF
70msec(typ)
PGOOD
Figure 30. Start-up Waveform at Feeding Mode (No Battery, 50Ω Load)
3.
Start-up Waveform at Feeding Mode(No battery, Heavy Load [Short to Ground])
VBUS
VOUT
VOUT
ISETOUT
40msec(typ)
VBUSOK
EN
20 OHM load switch
gate signal
OFF
Lower resistance
load switch gate
signal
OFF
ON
80msec(typ)
OFF
PGOOD
Figure 31. Start-up Waveform at Feeding Mode (No battery, Heavy Load [Short to Ground])
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4.
BD8665GW
BD8668GW
Voltage Waveform to PGOOD at Charging Mode (With Battery)
8.4V
VFB
VBUS Current
VBUS
40msec(typ)
ISETOUT
Automatic change on USB current
40msec(typ)
VBUSOK
EN
20 OHM load switch
gate signal
Lower resistance
load switch gate
signal
ON
OFF
10msec(typ)
ON
OFF
70msec(typ)
PGOOD
Figure 32. Voltage Waveform to PGOOD at Charging Mode (With Battery)
5.
Operation from Feeding Mode to Charging Mode
During feeding mode, after the output started up with 8.3V(typ) for BD8664GW and 8.4V(typ) for
BD8665GW/BD8668GW, if the battery has to be connected and the mode has to change to charging mode, set EN to L
then H to enable CP charging. This turns PGOOD pin to L then H. Note that VBUS current may exceed the set value
unless the EN is set L once.
6.
Operation from Charging Mode To Feeding Mode
During charging mode, if the mode has to change to feeding mode, set the EN to L, detach the battery, then set EN to H
again. This turns PGOOD pin to L, ramps up VFB to 8.3V (typ) for BD8664GW and 8.4V (typ) for
BD8665GW/BD8668GW by feeding mode, and turns PGOOD to H, afterwards. Note that the overcurrent protection may
occur unless the EN is set L like aforementioned VFB overvoltage detection waveform.
7.
Battery Overvoltage Detection Waveform
During charging, if the battery is detached by a user, VOUT will go higher as the mode changes to feeding mode. In this
scenario, to prevent damage to devices connected to this IC, OVP is integrated. PGOOD has to be turned off to L when
OVP is detected. Soft-start is again implemented when VOUT goes low due to its output load.
In the application circuit example, note that the VFB node goes down to VBUS -1Vf, as determined by an external
schottky diode.
OVP
OVP unlatched
VOUT
Charging
SW2=HiZ
8.4V (BD8665GW/BD8668GW)
8.3V (BD8664GW)
Battery is
detached
Soft-start restart
3.0V
PGOO
D
Figure 33. Battery Overvoltage Detection Waveform
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8.
BD8665GW
BD8668GW
Precaution on Voltage Application between Constant-Voltage Charging Voltage and OVP
When the voltage between constant-voltage charging voltage and OVP is applied to the VFB node, (e.g., An AC adapter
is unplugged when the AC adapter voltage is applied to the VFB pin), the VFB terminal drops drastically, so avoid the
above mentioned condition.
Application Components Selection
1.
Frequency Setting (FSET) Resistor
FSET端子抵抗 vs 発振周波数
FSET Resistor vs Frequency
Figure 33 Frequency Setting (FSET) Resistor
発振周波数[kHz]
10000
1000
100
10
100
FSET端子抵抗[kΩ
FSET Resistor [kΩ] ]
1000
Figure 34.. Frequency Setting (FSET) Resistor
2.
Inductor Selection
Inductance for the boost switching affects its ripple current and ripple current at feeding mode. The ripple voltage is
inversely proportional to the inductance and switching frequency so that the inductance must be higher if the frequency is
lower. In other words, the inductance can be smaller if the frequency is higher. However, if the inductance changes, since
the LC cutoff frequency changes, the phase compensation of ICOMP and VCOMP may have to be changed.
PWM
Inductance
Output Capacitance
ICOMP Time Constant
VCOMP Coefficient
1MHz(typ)
4.7µH
40µF
200Ω, 0.1µF serial
47kΩ, 0.1µF serial
※If the external coefficient is changed from the designated value above, check the open-loop gain phase carefully.
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Example of Recommended Circuit
0.1μF
USB (VBUS)
0.1μF
100mΩ
0.1μF
VBUS
VBUS
ISNS
Level Shifter
Charge ON/OFF
ON/OFF
EN
0.1μF
Internal REG
200
VBUSLIM
CP Error Amplifier
200mA
ICOMP
4.7μF
P
20Ω
(typ)
P
OCP
ISETIN1
1msec
SW1
Load SW
ISETIN2
N
Input Current
Control
100mA/500mA/
900mA/1500mA
ISETIN3
PGND
4.7μH
Driver
Reference Voltage
Control
ISETOUT1
SW2
CP/CV
Control
ISETOUT2
P
RB070M-30
ACLEN
0.1μF 47k VCOMP
10μF
SCP Detection
2.6V
Ramp up by VBUS
VBUSOK3.0V Output
VBUSNG0.0V Output
Internal
REG
3V
VBUSOK
3.0V at start-up during
chargingVBUSOK3.0V output
0.0V before start-up charging
PGOOD
VBUSLIM soft-start ends
50msec after charging starts
VFB
CV Error Amplifier
SYSTEM
VFB
47kΩ
Oscillator
500kHz～2MHz
30μF
FSET
47Ω
VBUSLIM
GND
GND
GND
HOST
GND
BATT+
BATTERY
BATT-
Figure 35. Example of Recommended Circuit
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Input/Output Pin Immediate Circuit
Pin No.
(BD8668GW)
Pin Name
A1/A2
A5
VBUS
VBUSLIM
D1/D2
/E2/E3
C5
GND
Pin Immediate Circuit
VBUS
VBUSLIM
USB power input
USB current limiter
Ground
PGND
Power Ground
GND
(sub)
A3
Function
ISNS
PGND
Current detection amp input
VBUS
ISNS
GND
A4
B4
C4
E5
VBUSLIM
PGOOD
VBUSOK
ISETOUT2
ISETOUT1
Logic output (with pull-down resistor)
3V REF
500kΩ
（typ.）
GND
B1
D3
ICOMP
VCOMP
VBUSLIM
VBUS
Error amp output
GND
B2
E1
B3
EN
ACLEN
ISETIN3
VBUSLIM
Logic input (with pull-down resistor)
500kΩ
（typ.）
GND
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Input/Output Pin Immediate Circuit - continued
Pin No.
(BD8668GW)
Pin Name
C2
C3
ISETIN1
ISETIN2
Pin Immediate Circuit
Function
VBUSLIM
Logic input (without pull-down resistor)
GND
B5
SW1
VBUSLIM
Load switch output
Inductor connection1
SW1
GND
C1
FSET
VBUSLIM
Frequency setting resistor terminal
FSET
GND
D4
E4
VFB
VFB
CV charging voltage feed-back terminal
VFB
GND
D5
SW2
VFB
Boost switching terminal
Inductor connection 2
SW2
GND
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Power dissipation Pd [W]
Thermal Reduction Characteristics
1.0
1.0W
0.5
0
25
50
75
100
125
150
Temperature Ta [℃]
Figure 36.. Power Dissipation (Mounted on a 4-layer substrate board)
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Operational Notes
1.
Reverse-Connection of Power Supply Connecter
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
terminals.
2.
Power Supply Line
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the digital
and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog block.
Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the
capacitance value when using electrolytic capacitors.
3.
Ground Potential
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large current. Also ensure that the ground traces of external components do not cause variation on the
ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded, the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when the
IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating,
increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of
connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Terminals
Input terminals of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way Is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So, unless otherwise specified, unused input terminals should be connected to the power
supply of ground line.
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Operational Notes – continued
12. Regarding the Input Pins of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
Parasitic
Elements
Pin B
B
GND
GND
Parasitic
Elements
GND
N Region
close-by
Figure 37. Example of monolithic IC structure
13. Thermal Shutdown Circuit (TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be
within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction temperature
(Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below the TSD threshold,
the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
14. Thermal Consideration
Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in
actual operating conditions.
15. Capacitor between Logic Output and GND
The logic outputs are VBUSOK, PGOOD, ISETOUT1 and ISETOUT2. With a large capacitor connected between logic
output and GND, it is possible that the logic output will short to 0V or GND and will cause the current from the capacitor to
flow into the logic output, causing damage to IC. The capacitor between logic output and GND must be 0.1µF or less.
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BD8668GW
Ordering Information
B
D
8
6
6
4
Part Number
B
D
8
6
6
D
8
6
6
Part Number
W
-
E2
Package
Packaging and forming specification
GW: UCSP75M2
E2: Embossed tape and reel
5
Part Number
B
G
G
W
-
E2
Package
Packaging and forming specification
GW: UCSP75M2
E2: Embossed tape and reel
8
G
W
-
E2
Package
Packaging and forming specification
GW: UCSP75M2
E2: Embossed tape and reel
Marking Diagrams
TOP VIEW
8668
8664
SIDE VIEW
Part Number Marking
Package
Orderable Part Number
BD8664GW
UCSP75M2
BD8664GW-E2
BD8665GW
UCSP75M2
BD8665GW-E2
BD8668GW
UCSP75M2
BD8668GW-E2
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TSZ02201-0A1A0AZ00130-1-2
15.Apr.2015 Rev.001
BD8664GW
BD8665GW
BD8668GW
Physical Dimensions, Tape and Reel information
Package Name
UCSP75M2
( BD8664GW )
< Tape and Reel Information >
Tape
Embossed carrier tape
Quantity
3000pcs
Direction of feed
E2
The direction is the pin 1 of product is at the upper left when you
hold reel on the left hand and you pull out the tape on the right hand
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
29/32
TSZ02201-0A1A0AZ00130-1-2
15.Apr.2015 Rev.001
BD8664GW
BD8665GW
BD8668GW
Physical Dimensions, Tape and Reel information
Package Name
UCSP75M2
( BD8665GW )
< Tape and Reel Information >
Tape
Embossed carrier tape
Quantity
3000pcs
Direction of feed
E2
The direction is the pin 1 of product is at the upper left when you
hold reel on the left hand and you pull out the tape on the right hand
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
30/32
TSZ02201-0A1A0AZ00130-1-2
15.Apr.2015 Rev.001
BD8664GW
BD8665GW
BD8668GW
Physical Dimensions, Tape and Reel information
Package Name
UCSP75M2
( BD8668GW )
< Tape and Reel Information >
Tape
Embossed carrier tape
Quantity
3000pcs
Direction of feed
E2
The direction is the pin 1 of product is at the upper left when you
hold reel on the left hand and you pull out the tape on the right hand
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
31/32
TSZ02201-0A1A0AZ00130-1-2
15.Apr.2015 Rev.001
BD8664GW
BD8665GW
BD8668GW
Revision History
Date
Revision
17.Dec.2014
001
Changes
New Release
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
32/32
TSZ02201-0A1A0AZ00130-1-2
15.Apr.2015 Rev.001
Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001