Wideband, Microwave Monolithic Amplifier Die 50Ω AVA-24A-D+ 5 to 22 GHz The Big Deal • Ultra-wideband, 5 to 22 GHz • Integrated matching, DC blocks, bias circuits • Unpackaged die form Product Overview The AVA-24A-D+ is an ultra-wideband microwave amplifier die fabricated using InGaAs PHEMT technology operating over extremely wide frequency range from 5 to 22 GHz. This model integrates the entire matching network with the majority of the bias circuit, reducing the need for complicated external circuits and simplifying board layouts. These advantages make the AVA-24A-D+ extremely user friendly and enable simple, straightforward use. Key Features Feature Advantages Ultra-wideband, 5 to 22 GHz Very broad frequency range supports a wide array of applications from microwave radio and radar to military communications and countermeasures, among others. Excellent gain flatness, ±1.3 dB Minimizes the need for external equalizer networks and gain flattening components, making it a great fit for instrumentation and EW applications. High isolation, 31 to 42 dB With high reverse isolation (18 – 30 dB directivity), the AVA-24A-D+ is an excellent choice for buffering broadband circuits. It is an ideal LO driver amplifier and provides designers system flexibility and margin when integrating cascaded RF components. Single +5V supply • No hassle associated with amplifiers using dual supply such as power supply sequencing. • Integrated output bias-tee simplifies layout and reduces cost. Unpackaged die Enables the user to integrate the amplifier directly into hybrids. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 1 of 6 Wideband, Microwave Monolithic Amplifier Die 50Ω AVA-24A-D+ 5 to 22 GHz Product Features • Gain, 13.1 dB typ. & Flatness, ±1.6 dB • Output Power, up to +19.4 dBm typ. • Excellent isolation, 37 dB typ. at 12 GHz • Single Positive Supply Voltage, 5.0V • Integrated DC blocks, Bias-Tee & Microwave bypass capacitor • Unconditionally Stable +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Typical Applications • Military EW and Radar • DBS • Wideband Isolation amplifier • Microwave point-to-point radios • Satellite systems Ordering Information: Refer to Last Page General Description The AVA-24A-D+ is a wideband monolithic amplifier die fabricated using InGaAs PHEMT technology with outstanding gain flatness up to 22 GHz. It is manufactured using PHEMT technology and is unconditionally stable. Its outstanding isolation enables it to be used as a wideband isolation amplifier or buffer amplifier in a variety of microwave systems. Simplified Schematic and Pad description DC RF-OUT RF-IN Function Description RF-IN RF input pad RF-OUT DC (VD1, VD2) GND RF output pad DC power supply Connected to ground Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled REV. OR to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] M153692 AVA-24A-D+ RS/TH/CP 160915 Page 2 of 6 AVA-24A-D+ Wideband Monolithic PHEMT MMIC Amplifier Electrical Specifications(1) at 25°C, Zo=50Ω, (refer to characterization circuit, Fig.1) Parameter Condition (GHz) Frequency Range DC Voltage (VD1, VD2) DC Current (ID1+ID2) Min. Typ. 5.0 94 5.0 8.0 10.0 12.0 14.0 16.0 22.0 5.0 8.0 10.0 12.0 14.0 16.0 22.0 5.0 8.0 10.0 12.0 14.0 16.0 22.0 5.0 8.0 10.0 12.0 14.0 16.0 22.0 5.0 8.0 10.0 12.0 14.0 16.0 22.0 5.0 8.0 10.0 12.0 14.0 16.0 22.0 12 Gain Input Return Loss Output Return Loss Output IP3 (2) Output Power @ 1 dB compression Noise Figure Directivity (Isolation-Gain) DC Current Variation vs. Voltage Thermal Resistance 5.0 126 11.4 13.9 13.4 13.0 12.9 13.7 10.6 10.3 32.1 21.1 18.1 17.6 17.6 8.8 6.4 12.0 10.7 9.9 10.0 10.4 15.9 32.6 27.5 26.4 25.3 24.2 23.3 24.4 16.9 18.4 19.0 19.2 19.4 19.2 16.7 9.3 5.2 5.4 5.8 5.8 6.1 6.4 24 0.002 45 Max. Units 22.0 GHz V mA 147 dB dB dB dBm dBm dB dB mA/mV °C/W Absolute Maximum Ratings(3) Parameter Ratings Operating Temperature Channel Temperature DC Voltage VD1, VD2 Pad (4) DC Voltage RF-IN &RF OUT Power Dissipation DC Current VD1 & VD2 (Total) Input Power (CW) -40°C to 85°C 150°C 5.5 V 10 V 860 mW 160 mA 20 dBm 1. Measured on Mini-Circuits Die Characterization test board See Characterization Test Circuit (Fig. 1) 2. At Pout=8 dBm/tone 3. Permanent damage may occur if any of these limits are exceeded. These maximum ratings are not intended for continuous normal operation. Measured in industry standard 3x3 min 8-lead MCLP package 4. For continuous operation do not exceed 5.2V Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 3 of 6 AVA-24A-D+ Wideband Monolithic PHEMT MMIC Amplifier 45 40 OIP3 - Minimum (dBm) 35 -5dBm -3dBm 30 0dBm 25 3dBm 5dBm 20 6dBm 7dBm 15 8dBm 9dBm 10 10dBm 5 0 4000 9000 14000 FREQ (MHz) 19000 24000 Figure 1: Test Circuit used for characterization. Gain, Return loss, Output power at 1dB compression (P1 dB), output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. C1=100 pF, Compex capacitor CSA-200-10X10X10X5-G-101-M Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 8 dBm/tone at output. Die Layout Bonding Pad Position (Dimensions in µm, Typical) Fig 2. Die Layout Fig 3. Bonding Pad Positions Critical Dimensions Parameter Values Die Thickness, µm 100 Die Width, µm 1230 Die Length, µm 1160 Notes Bond µm x specification 80 A. Performance and Pad qualitySize, attributes and conditions not expressly stated 80 in this document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 4 of 6 AVA-24A-D+ Wideband Monolithic PHEMT MMIC Amplifier Assembly and Handling Procedure 1. Storage Dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. ESD MMIC PHEMT amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter ESD damage to dice. 3. Die Attach The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s cure condition. It is recommended to use antistatic die pick up tools only. 4. Wire Bonding Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. Assembly Diagram Recommended Wire Length, Typical PCB Information Wire Length (mm) Wire Loop Height (mm) RF-In, RF-Out 0.25 0.15 VD1, VD2 0.50 0.15 Wire PCB material Rogers 435013 Dielectric thickness 10 mil Copper thickness (Top & Bottom) 0.5 oz. Finish ENIG Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 5 of 6 AVA-24A-D+ Wideband Monolithic PHEMT MMIC Amplifier Additional Detailed Technical Information additional information is available on our dash board. Data Table Performance Data Swept Graphs S-Parameter (S2P Files) Data Set with and without port extension(.zip file) Case Style Die Die Ordering and packaging information Quantity, Package Model No. Small, Gel - Pak: 10,50,100 KGD* Medium†, Partial wafer: KGD*<5K Large†, Full Wafer AVA-24A-DG+ AVA-24A-DP+ AVA-24A-DF+ Available upon request contact sales representative † Refer to AN-60-067 Environmental Ratings ENV-80 *Known Good Dice (“KGD”) means that the dice in question have been subjected to Mini-Circuits DC test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefined range. While DC testing is not definitive, it does help to provide a higher degree of confidence that dice are capable of meeting typical RF electrical parameters specified by Mini-Circuits. ESD Rating** Human Body Model (HBM): Class 1A (250 to <500V) in accordance with ANSI/ESD STM 5.1 - 2001 Machine Model (MM): Class M1 (50V) in accordance with ANSI/ESD STM5.2-1999 ** Tested in industry standard 3x3 mm 8-lead MCLP package. Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults. E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental effects on Known Good Dice. F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini- Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party Notes trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. third-partyand of performance Mini-Circuits its products. B. Electrical specifications dataor contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 6 of 6