CYSTEKEC BTD5213J3 General purpose npn epitaxial planar transistor Datasheet

Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2012.05.16
Page No. : 1/7
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD5213J3
Features
• Low collector saturation voltage
• High breakdown voltage, VCEO=80V (min.)
• High collector current, IC(max)=1A (DC)
• Pb-free lead plating package
Symbol
Outline
TO-252(DPAK)
BTD5213J3
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj ; Tstg
Limits
100
80
5
1
2 (Note)
1
10
-55~+150
Unit
V
V
V
A
A
W
W
°C
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
BTD5213J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2012.05.16
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*hFE
fT
Cob
Min.
100
80
5
160
-
Typ.
0.15
100
20
Max.
1
1
0.4
400
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=80V, IE=0
VEB=4V, IC=0
IC=500mA, IB=20mA
VCE=5V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTD5213J3-0-T3-G
BTD5213J3
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2012.05.16
Page No. : 3/7
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
HFE@VCE=3V
100
HFE@VCE=2V
VBESAT@IC=20IB
100
VCESAT@IC=20IB
10
10
1
10
100
Collector Current---IC(mA)
1
1000
On Voltage vs Collector Current
10
100
Collector Current---IC(mA)
1000
Transition Frequency vs Collector Current
1000
Transition Frequency---fT(MHz)
On Voltage---(mV)
1000
VBE(on)@VCE=2V
100
10
100
1
10
100
Collector Current---IC(mA)
1
1000
10
100
Collector Current---IC(mA)
Capacitance Characteristics
1000
Power Derating Curve
1.2
100
Power Dissipation---PD(W)
Capacitance---Cob(pF)
f=1MHz
10
1
1
0.8
0.6
0.4
0.2
0
0.1
BTD5213J3
1
10
Collector Base Voltage-- VCB(V)
100
0
25
50
75
100 125 150
Ambient Temperature---TA(℃)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2012.05.16
Page No. : 4/7
Typical Characteristics(Cont.)
Power Derating Curve
Power Dissipation---PD(W)
12
10
8
6
4
2
0
0
BTD5213J3
25
50
75 100 125 150
Case Temperature---TC(℃)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2012.05.16
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTD5213J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2012.05.16
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD5213J3
CYStek Product Specification
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2012.05.16
Page No. : 7/7
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
D5213
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD5213J3
CYStek Product Specification
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