BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V(BR)DSS RDS(on) max Q1 Q2 60V -50V 13.5Ω @ VGS = 10V 10Ω @ VGS = -5V ID TA = +25°C 115mA -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Complementary Pair • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications • General Purpose Interfacing Switch • Power Management Functions • Analog Switch • • Case: SOT363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 • Terminal Connections: See Diagram • Weight: 0.006 grams (approximate) SOT363 D1 G2 S2 Q1 Q2 S1 G1 D2 Top View Internal Schematic Top View Ordering Information (Note 4) Part Number BSS8402DW-7-F BSS8402DW-13-F BSS8402DWQ-7 BSS8402DWQ-13 Notes: Compliance Standard Standard Automotive Automotive Case SOT363 SOT363 SOT363 SOT363 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Date Code Key Year 2003 Code P Month Code Jan 1 2004 R KNP 2005 S Feb 2 BSS8402DW Document number: DS30380 Rev. 21 - 2 2006 T Mar 3 2007 U Apr 4 YM KNP YM Marking Information 2008 V May 5 KNP = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2009 W 2010 X Jun 6 1 of 7 www.diodes.com Jul 7 2011 Y Aug 8 2012 Z Sep 9 2013 A 2014 B Oct O 2015 C Nov N 2016 D Dec D February 2014 © Diodes Incorporated BSS8402DW Maximum Ratings – Total Device (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Symbol Value 200 Units mW RθJA 625 °C/W TJ, TSTG -55 to +150 °C PD Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Maximum Ratings N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 60 V Gate-Source Voltage Continuous Pulsed Continuous Continuous @ +100°C Pulsed Drain Current (Note 5) VGSS ID ±20 ±40 115 73 800 V mA Maximum Ratings P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -50 Units V Drain-Gate Voltage RGS ≤ 20KΩ VDGR -50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current (Note 5) Continuous ID -130 mA Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. BSS8402DW Document number: DS30380 Rev. 21 - 2 2 of 7 www.diodes.com February 2014 © Diodes Incorporated BSS8402DW Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Unit BVDSS 60 70 ⎯ V VGS = 0V, ID = 10µA IDSS ⎯ ⎯ 1.0 500 µA VDS = 60V, VGS = 0V IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 ⎯ 2.5 V RDS(on) ⎯ 3.2 4.4 7.5 13.5 ID(on) 0.5 1.0 ⎯ A gFS 80 ⎯ ⎯ mS Input Capacitance Ciss ⎯ 22 50 pF Output Capacitance Coss ⎯ 11 25 pF Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF Turn-On Delay Time tD(on) ⎯ 7.0 20 ns Turn-Off Delay Time tD(off) ⎯ 11 20 ns Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25°C @ TC = +125°C Gate-Body Leakage Test Condition ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance @ TJ = +25°C @ TJ = +125°C Ω VDS = VGS, ID = 250µA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω Electrical Characteristics P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max BVDSS -50 ⎯ ⎯ V VGS = 0V, ID = -250µA IDSS ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 -2 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C Zero Gate Voltage Drain Current Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V Gate Threshold Voltage VGS(th) -0.8 ⎯ -2.0 V VDS = VGS, ID = -1mA Static Drain-Source On-Resistance RDS (on) ⎯ ⎯ 10 Ω VGS = -5V, ID = -0.100A gFS .05 ⎯ ⎯ S VDS = -25V, ID = -0.1A Input Capacitance Ciss ⎯ ⎯ 45 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 12 pF Turn-On Delay Time tD(on) ⎯ 10 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 18 ⎯ ns Drain-Source Breakdown Voltage Unit Test Condition ON CHARACTERISTICS (Note 6) Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Note: VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V 6. Short duration pulse test used to minimize self-heating effect. BSS8402DW Document number: DS30380 Rev. 21 - 2 3 of 7 www.diodes.com February 2014 © Diodes Incorporated BSS8402DW N-CHANNEL – 2N7002 Section 7 1.0 0.8 0.6 0.4 0.2 0 6 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN-SOURCE CURRENT (A) Tj = 25° C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 On-Region Characteristics 5 4 3 2 1 0 5 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Figure 2 On-Resistance vs. Drain Current 5 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0.2 6 3.0 2.5 2.0 1.5 VGS = 10V, ID = 200mA 4 3 2 1 1.0 -55 0 0 -30 -5 20 45 70 95 120 145 TJ, JUNCTION TEMPERATURE (° C) Figure 3 On-Resistance vs. Junction Temperature 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4 On-Resistance vs. Gate-Source Voltage 250 10 VDS = 10V 9 8 PD, POWER DISSIPATION (mW) VGS, GATE-SOURCE CURRENT (V) 0 7 6 5 4 3 2 200 150 100 50 1 0 0 0.2 0.4 0.8 0.6 ID, DRAIN CURRENT (A) Figure 5 Typical Transfer Characteristics BSS8402DW Document number: DS30380 Rev. 21 - 2 1 4 of 7 www.diodes.com 0 50 75 100 125 150 175 200 25 TA, AMBIENT TEMPERATURE (° C) Figure 6 Max Power Dissipation vs. Ambient Temperature 0 February 2014 © Diodes Incorporated BSS8402DW 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) IDSS, DRAIN LEAKAGE CURRENT (nA) 1000 TA = 150°C 100 TA = 125°C TA = 85°C 10 TA = 25°C 1 1.8 1.6 1.4 1.2 1 0.8 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperaure 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 7 Typical Drain-Source Leakage Current vs. Voltage -50 P-CHANNEL – BSS84 Section -600 -1.0 -500 -0.8 ID, DRAIN CURRENT (A) ID, DRAIN-SOURCE CURRENT (mA) TA = 25° C -400 -0.6 -300 -0.4 -200 -0.2 -100 0 0 -0.0 -1 -2 -3 -4 -5 VDS, DRAIN-SOURCE (V) Figure 9 Drain-Source Current vs. Drain-Source Voltage 0 15 10 VGS = -10V ID = -0.13A 8 RDS, ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 9 7 6 5 4 3 12 9 6 3 2 TA = 125° C 1 0 -5 -1 -2 -3 -4 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 10 Drain Current vs. Gate-Source Voltage TA = 25 ° C 0 -1 -2 -4 -5 -3 VGS, GATE TO SOURCE (V) Figure 11 On-Resistance vs. Gate-Source Voltage BSS8402DW Document number: DS30380 Rev. 21 - 2 5 of 7 www.diodes.com 0 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 12 On-Resistance vs. Junction Temperature -25 February 2014 © Diodes Incorporated BSS8402DW 1000 -IDSS, DRAIN LEAKAGE CURRENT (nA) 25.0 RDS, ON-RESISTANCE (Ω) 20.0 VGS = -3.5V VGS = -3V 15.0 VGS = -5V VGS = -4V 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 -0.2 -0.4 -0.6 -0.8 ID, DRAIN CURRENT (A) Figure 13 On-Resistance vs. Drain Current 1.0 TA = 150°C 100 TA = 125°C TA = 85°C 10 TA = 25°C 1 5 10 15 20 25 30 35 40 45 50 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 14 Typical Drain-Source Leakage Current vs. Voltage -VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 1.8 1.6 1.4 1.2 1 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 15 Gate Threshold Variation vs. Ambient Temperaure Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° α All Dimensions in mm B C H K J BSS8402DW Document number: DS30380 Rev. 21 - 2 M D F L 6 of 7 www.diodes.com February 2014 © Diodes Incorporated BSS8402DW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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