CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD4512F3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current capability • RoHS compliant package Applications • CCFL drivers • Voltage regulators • Relay drivers • High efficiency low voltage switching applications Symbol Outline BTD4512F3 B：Base C：Collector E：Emitter BTD4512F3 TO-263 B C E CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 150 60 7 7 12 (Note 1) 2 1.65 40 75.8 3.125 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. Characteristics (Ta=25°C) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 *VCE(sat) 5 *VCE(sat) 6 *VCE(sat) 7 *VBE(sat) *hFE 1 *hFE 2 *hFE 3 *hFE 4 fT Cob ton toff Min. 150 60 7 200 200 200 40 - Typ. 14 58 94 118 185 215 260 0.9 150 54 45 630 Max. 100 100 25 70 120 180 260 300 400 1.2 500 - Unit V V V nA nA mV mV mV mV mV mV mV V MHz pF ns ns Test Conditions IC=100μA, IE=0 IC=1mA, IB=0 IC=100μA, IC=0 VCB=150V, IE=0 VEB=7V, IC=0 IC=100mA, IB=5mA IC=1A, IB=50mA IC=1A, IB=10mA IC=2A, IB=40mA IC=4A, IB=400mA IC=4A, IB=80mA IC=5A, IB=200mA IC=2A, IB=100mA VCE=2V, IC=10mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=10A VCE=10V, IC=50mA VCB=10V, f=1MHz VCC=10V, IC=10IB1=-10IB2=1A, RL=10Ω *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% BTD4512F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 3/ 8 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.4 2 1mA Collector Current---IC(A) Collector Current---IC(A) 0.3 0.25 0.2 0.15 500u 400uA 0.1 300uA 0.05 200uA IB=100uA 5mA 1.8 0.35 1.6 1.4 1.2 1 2.5mA 2mA 1.5mA 0.8 0.6 0.4 1mA 0.2 IB=500uA 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 9 20mA 50mA 8 5 Collector Current---IC(A) Collector Current---IC(A) 6 4 10mA 3 6mA 2 4mA 1 IB=2mA 7 6 20mA 5 4 10mA 3 2 IB=5mA 1 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Current Gain vs Collector Current Current Gain vs Collector Current 1000 Current Gain---HFE 1000 Current Gain---HFE 6 125°C 75°C 25°C 100 125°C 75°C 25°C 100 VCE=2V VCE=1V 10 10 1 BTD4512F3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 10000 Collector Current---IC(mA) CYStek Product Specification Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 4/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE VCESAT@IC=20IB 125°C 75°C 25°C 100 100 125°C 75°C 25°C VCE=5V 10 10 1 10 100 1000 Collector Current---IC(mA) 1 10000 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VCESAT@IC=100IB Saturation Voltage---(mV) Saturation Voltage---(mV) VCESAT@IC=50IB 100 125°C 75°C 25°C 10 1000 100 125°C 75°C 25°C 10 1 10 100 1000 10000 1 Collector Current---IC(mA) 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current On Voltage vs Collector Current 10000 10000 VBESAT@IC=10IB VBEON@VCE=2V 1000 25°C 75°C 125°C 100 On Voltage---(mV) Saturation Voltage---(mV) 10000 1000 25°C 75°C 125°C 100 1 10 100 1000 Collector Current---IC(mA) BTD4512F3 10000 1 10 100 1000 10000 Collector Current---IC(mA) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 5/ 8 Typical Characteristics(Cont.) Capacitance vs Reverse-biased Voltage Power Derating Curve 10000 1.8 Power Dissipation---PD(W) Capacitance---(pF) 1.6 Cib 1000 100 Cob 1.4 1.2 1 0.8 0.6 0.4 0.2 10 0 0.1 1 10 Reverse-biased Voltage---VR(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 Power Derating Curve 45 Power Dissipation---PD(W) 40 35 30 25 20 15 10 5 0 0 50 100 150 Case Temeprature---TC(℃) 200 Ordering Information Device BTD4512F3 BTD4512F3 Package TO-263 (Pb-free lead plating) Shipping 800pcs / tape & reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 6/ 8 Reel Dimension Carrier Tape Dimension BTD4512F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 7/ 8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD4512F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 8/ 8 TO-263 Dimension Marking : Device Name Year Code: 9→2009, 0→ 2010,…, etc B D 2 F α1 42 1 E C A α2 3 I G J K L α3 Month Code: 1→Jan, 2→ Feb,…,9→ Sep, A→Oct, B→Nov, C→ Dec H Style : Pin 1.Base 2.Collector 3.Emitter 4.Collector 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 *:Typical Inches Min. Max. 0.3800 0.4050 0.3300 0.3700 0.0550 0.5750 0.6250 0.1600 0.1900 0.0450 0.0550 0.0900 0.1100 0.0180 0.0290 DIM A B C D E F G H Millimeters Min. Max. 9.65 10.29 8.38 9.40 1.40 14.61 15.88 4.06 4.83 1.14 1.40 2.29 2.79 0.46 0.74 DIM I J K L α1 α2 α3 Inches Min. Max. 0.0500 0.0700 *0.1000 0.0450 0.0550 0.0200 0.0390 - Millimeters Min. Max. 1.27 1.78 *2.54 1.14 1.40 0.51 0.99 6° 8° 6° 8° 0° 5° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD4512F3 CYStek Product Specification